Winbond Electronics Corporation W948D2FBJX5I TR
- Part No.:
- W948D2FBJX5I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W948D2FBJX5I TR.pdf
- Description:
- IC DRAM 256MBIT PAR 90VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,326
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W948D2FBJX5I TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 1.8V core/I/O supply, CAS latency of 2 or 3, and 64 ms refresh period. It implements four internal banks, burst lengths of 2/4/8/16, and sequential or interleaved burst types. Designed for low-power mobile applications including smartphones and portable tablets requiring high-bandwidth memory with aggressive power management.
For engineers reviewing the W948D2FBJX5I TR datasheet, W948D2FBJX5I TR pinout, W948D2FBJX5I TR application, or W948D2FBJX5I TR equivalent, key selection criteria include its VFBGA-60 package, PASR and ATCSR support, deep power-down mode, programmable output drive strength, and differential clock interface compatibility with LPDDR controllers.
Technical Context
This LPDDR SDRAM uses a synchronous double-data-rate architecture with differential CK/CK inputs and bidirectional DQS strobes aligned to read data edges and centered on write data. Its command decoder interprets CS, RAS, CAS, and WE in combination with BA0/BA1 to activate banks, initiate reads/writes, precharge rows, or enter self-refresh.
Four independent banks enable bank interleaving to hide row precharge delays. Mode and Extended Mode Registers configure burst length, CAS latency, burst type, PASR granularity, and ATCSR thresholds. Initialization requires two auto-refresh commands, mode register programming, and strict timing windows (tRP, tRFC, tMRD) before operational readiness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit wide |
| Data Bus Width | x16 - supports 16-bit parallel I/O interface; matches LPDDR controller lanes for compact mobile SoC integration |
| Clock Frequency | Up to 200 MHz (–5 speed grade); enables 400 MT/s data rate with DDR operation |
| CAS Latency | CL = 2 or 3 - determines minimum clock cycles between READ command and first valid data output |
| Refresh Interval | 64 ms - defines maximum time between refresh commands to retain stored data without corruption |
| Supply Voltages | VDD = VDDQ = 1.7–1.95 V - single-supply design simplifies PMIC layout; tight tolerance ensures stable timing margins |
| Operating Temperature | –40°C to +85°C (Industrial grade) - qualified for extended thermal environments in handheld and automotive infotainment |
Pinout & Package
W948D2FBJX5I TR is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) measuring 8 mm × 8 mm × 0.6 mm, optimized for space-constrained mobile PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address inputs; A10 doubles as Auto Precharge select bit for per-bank or all-bank precharge control |
| BA0, BA1 | Bank Address | Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands |
| CS, RAS, CAS, WE | Command Control | Encoded command bus; combinations define all operations including MRS, EMRS, REF, and SRR |
| CK / CK | Differential Clock | Edge-aligned sampling reference for all inputs; internal PLL derives system clocks; enables jitter-tolerant timing |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports burst transfers up to 16 words per access with DM masking |
| UDQS / LDQS | Data Strobe | Separate strobes for upper/lower byte groups; edge-aligned on reads, center-aligned on writes for precise capture |
| UDM / LDM | Data Mask | Byte-level write masking: UDM controls DQ8–DQ15, LDM controls DQ0–DQ7; sampled on both DQS edges |
| CKE | Clock Enable | Asynchronous entry into power-down, self-refresh, or active power-down; synchronous exit from self-refresh |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks or sub-arrays - cuts standby power up to 50% in partial-use scenarios |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh rate dynamically based on die temperature - maintains data retention while minimizing unnecessary refresh cycles at low temp |
| Deep Power Down (DPD) Mode | Lowest power state (<10 µA typical); retains no data but enables ultra-fast wake-up (<100 µs) after re-initialization |
| Programmable Output Drive Strength | Configurable via Extended Mode Register - allows signal integrity tuning across varying trace lengths and load conditions |
| Auto Precharge Option | Enables automatic row closure after each burst - eliminates need for explicit PRE command, reducing controller overhead |
Applications
| Smartphone Application Processor Memory | Portable Tablet Main Memory |
|---|---|
|
Use Scenario: Primary working memory for ARM-based application processors in sub-6-inch smartphones with dual-camera ISP pipelines and 4K video playback. IC Role / Device Role / Timing Role: LPDDR SDRAM serving as system DRAM - interfaces directly with SoC memory controller using differential CK/CK and DQS-strobed x16 data transfers. Use Value: 400 MT/s bandwidth meets real-time frame buffering and UI rendering demands; PASR and ATCSR extend battery life during background app refresh and idle screen states. |
Use Scenario: Main memory subsystem in 7–10 inch Android tablets supporting multi-window multitasking and GPU-accelerated UI compositing. IC Role / Device Role / Timing Role: High-density, low-voltage memory device providing 32MB of contiguous address space with bank-interleaved access to sustain >1.2 GB/s aggregate throughput. Use Value: Deep Power Down mode enables rapid suspend/resume for instant-on user experience; programmable drive strength accommodates varied PCB stackup and routing constraints. |
| Automotive Infotainment Head Unit | Industrial Handheld Terminal |
|
Use Scenario: Memory for QNX- or Linux-based head units with navigation, voice assistant, and rear-seat entertainment functions. IC Role / Device Role / Timing Role: Industrial-grade LPDDR SDRAM operating across –40°C to +85°C ambient - synchronized to automotive SoC via LVCMOS-compliant command/address bus. Use Value: Extended temperature qualification and 64 ms refresh guarantee data integrity in thermally unstable dash environments; clock stop capability reduces EMI during audio-only playback. |
Use Scenario: Ruggedized barcode scanner or field service terminal requiring reliable memory under shock, vibration, and intermittent power. IC Role / Device Role / Timing Role: Low-power mobile DRAM supporting frequent sleep/wake cycles and brown-out recovery sequences without data loss. Use Value: Robust initialization sequence with mandatory dual auto-refresh ensures deterministic startup after power glitches; status register read (SRR) enables runtime health monitoring. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H32M16LFCK-6 IT:F | Same density (256Mb), x16, CL=3 only; supports 166 MHz max (vs. 200 MHz); different VFBGA-60 pinout (non-pin-compatible) | Targeted for legacy mobile platforms with fixed CL=3 timing; lacks PASR and ATCSR features | Choose when CL=3 suffices and power optimization features are not required; verify board-level signal routing against MT46H32M16LFCK-6 pin map |
| IS42S16160J-6BLI | SDR SDRAM (not LPDDR); 2.5V supply; no differential clock or DQS; 143 MHz max; no PASR/ATCSR/DPD | Designed for cost-sensitive industrial controllers where low power is secondary to BOM simplicity | Only consider for non-mobile, non-battery-powered systems; requires full redesign of memory interface logic and power delivery |
Compared with MT46H32M16LFCK-6 IT:F and IS42S16160J-6BLI, W948D2FBJX5I TR delivers higher bandwidth, advanced power management (PASR/ATCSR/DPD), and LPDDR-specific timing compliance - making it the sole fit for modern mobile and automotive memory subsystems requiring dynamic power scaling.
Availability
W948D2FBJX5I TR is available at Aetrix Electronics and suitable for smartphone main memory, tablet system RAM, automotive infotainment modules, industrial handheld terminals, and portable medical devices requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W948D2FBJX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.
W948D2FBJX5I TR belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-powered portable electronics demanding high bandwidth, minimal active/idle power, and robust thermal performance across industrial temperature grades.
FAQ
What is the package type and ball count for W948D2FBJX5I TR?
W948D2FBJX5I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 8 mm × 0.6 mm. This x16 configuration matches the W948D2FB variant specified in Winbond's official datasheet revision A01-004, with ball assignments validated for LPDDR x16 operation including dedicated UDQS/LDQS and UDM/LDM pins.
Does W948D2FBJX5I TR support both CAS latency 2 and 3?
Yes, W948D2FBJX5I TR supports configurable CAS latency of CL=2 or CL=3, set via bits A4–A6 in the Mode Register during initialization. The device achieves CL=2 at 133 MHz and CL=3 at 200 MHz, enabling trade-offs between timing margin and peak bandwidth depending on system clock stability and PCB layout quality.
How does Partial Array Self Refresh (PASR) function in W948D2FBJX5I TR?
W948D2FBJX5I TR implements PASR through Extended Mode Register settings that allow selective self-refresh of individual banks or sub-arrays. When enabled, only designated portions of the 256Mb array are refreshed, reducing current draw by up to 50% compared to full-array self-refresh - critical for extending battery life during display-off or background task states.
What power-saving modes are supported by W948D2FBJX5I TR?
W948D2FBJX5I TR supports three hierarchical power-saving modes: Power Down (reduces I/O buffer activity), Deep Power Down (cuts supply current to <10 µA), and Self Refresh (retains data with minimal current). It also features Clock Stop to halt CK/CK during idle periods and Automatic Temperature Compensated Self Refresh to adapt refresh rate to die temperature.
Is W948D2FBJX5I TR compatible with standard LPDDR controllers?
Yes, W948D2FBJX5I TR complies with JEDEC LPDDR (JESD209) specifications for command encoding, timing parameters (tRP, tRFC, tMRD), and electrical interface (LVCMOS levels, differential CK/CK, DQS-strobed DQ). Its pinout, initialization sequence, and register definitions align with industry-standard LPDDR x16 controllers used in Qualcomm Snapdragon, MediaTek Helio, and NXP i.MX platforms.
W948D2FBJX5I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W948D2FBJX5I TR FAQ
1.How can I place an order for W948D2FBJX5I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W948D2FBJX5I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W948D2FBJX5I TR reliable?
The price and inventory of W948D2FBJX5I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D2FBJX5I TR is usually 5 days.
3.What payment methods are accepted for W948D2FBJX5I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D2FBJX5I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W948D2FBJX5I TR?
W948D2FBJX5I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W948D2FBJX5I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W948D2FBJX5I TR?
For technical support, including W948D2FBJX5I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D2FBJX5I TR requirements.
6.How does Aetrix verify that W948D2FBJX5I TR is sourced from the original manufacturer or authorized distributors?
All W948D2FBJX5I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D2FBJX5I TR meets industry standards.
7.What is the process for return or replacement of W948D2FBJX5I TR?
All W948D2FBJX5I TR units undergo pre-shipment inspection (PSI). If there is an issue with W948D2FBJX5I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W948D2FBJX5I TR part is unused and in its original packaging.
Return procedure for W948D2FBJX5I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W948D2FBJX5I TR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

