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Winbond Electronics Corporation W948D2FBJX6E

Part No.:
W948D2FBJX6E
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
90-TFBGA
Datasheet:
AetrixW948D2FBJX6E.pdf
Description:
IC DRAM 256MBIT PAR 90VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,405

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Product details

Overview

W948D2FBJX6E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and support for burst lengths of 2/4/8/16 in sequential or interleave mode - used as main memory in space-constrained portable devices including smartphones and ultra-thin tablets.

For engineers reviewing the W948D2FBJX6E datasheet, W948D2FBJX6E pinout, W948D2FBJX6E application, or W948D2FBJX6E equivalent, key selection considerations include its 60-ball VFBGA (x16) package, PASR/ATCSR power management, deep power-down mode, differential clock interface, and compatibility with LPDDR1 protocol timing and command set.

Technical Context

This LPDDR SDRAM implements four independent internal banks enabling bank interleaving to hide precharge latency. It uses differential CK/CK inputs for clock synchronization and bidirectional DQS strobes aligned with read data and centered on write data.

Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable output drive strength, auto-precharge per burst, and clock stop during idle periods.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit wide
Data Bus Width x16 - requires 16-bit data path; matches W948D2FBJX6E's 60-ball VFBGA package
Clock Rate Up to 200MHz (−5 speed grade), supporting 400MT/s data rate via double-data-rate transfers
CAS Latency Programmable CL=2 or CL=3 - determines minimum RAS-to-CAS delay for read operations
Burst Length Configurable 2, 4, 8, or 16 - defines number of consecutive column accesses per READ/WRITE command
Refresh Interval 64ms tREFI - mandates periodic refresh to retain data; tREFI = 7.8μs per bank for x16 configuration
Operating Voltage VDD = VDDQ = 1.7–1.95V - low-voltage operation optimized for battery-powered mobile systems
Temperature Range Industrial: −40°C to +85°C - qualified for extended environmental operation in embedded handhelds

Pinout & Package

W948D2FBJX6E is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch, footprint-optimized for mobile PCB layouts. Pin assignment follows LPDDR x16 standard layout per datasheet Section 3.1.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Input Row/column address inputs; A10 functions as Auto Precharge enable (AP)
BA0, BA1 Bank Address Selects one of four internal banks for ACTIVE/READ/WRITE/PRECHARGE commands
CS, RAS, CAS, WE Command Control LVCMOS-level control signals defining all DRAM commands (e.g., CS+RAS+CAS+WE = PRECHARGE)
CK, CK Differential Clock Edge-triggered clock pair; all inputs sampled at CK↑/CK↓ crossing; outputs referenced to same crossing
CKE Clock Enable Asynchronous entry into POWER DOWN, SELF REFRESH, or ACTIVE POWER DOWN when pulled low
DQ0–DQ15 Data I/O 16-bit bidirectional data bus; supports double-data-rate transfers synchronized to DQS edges
UDQS, LDQS Data Strobe UDQS clocks DQ8–DQ15; LDQS clocks DQ0–DQ7; edge-aligned on reads, center-aligned on writes
UDM, LDM Data Mask LDM masks DQ0–DQ7; UDM masks DQ8–DQ15 during WRITE; sampled on both DQS edges
VDD, VSS Core Power/Ground 1.7–1.95V core supply and return; must ramp simultaneously with VDDQ to prevent latch-up
VDDQ, VSSQ I/O Power/Ground Separate 1.7–1.95V supply for DQ/DQS/DM drivers - isolates noise-sensitive I/O from core logic

Key Features

Feature Design Value
Partial Array Self Refresh (PASR) Reduces self-refresh current by refreshing only active memory subarrays - extends battery life during light background activity
Automatic Temperature Compensated Self Refresh (ATCSR) Adjusts refresh rate based on die temperature - maintains data retention while minimizing power at elevated temperatures
Deep Power Down (DPD) Mode Lowest-power standby state (IDD6 < 10μA); retains no data but enables fastest wake-up among ultra-low-power modes
Programmable Output Drive Strength Configurable via Extended Mode Register - allows signal integrity tuning for varying trace lengths and termination schemes
Four-Bank Architecture Enables concurrent row activation across banks - hides tRP/tRC delays via bank interleaving for sustained bandwidth
Auto Precharge Option Automatically precharges target bank after each READ/WRITE burst - simplifies controller logic and reduces command overhead

Applications

Smartphone Application Memory Tablet System Memory

Use Scenario: Main memory in mid-tier Android smartphones with ARM Cortex-A series SoCs requiring low-power, high-bandwidth DRAM.

IC Role / Device Role / Timing Role: LPDDR1-compliant system memory providing burst-accessed code/data storage with CAS latency of 2 or 3 cycles.

Use Value: Enables responsive UI and multitasking under 1.8V supply while meeting 64ms refresh compliance for data retention.

Use Scenario: Primary memory in compact 7–8 inch tablets where board area and thermal envelope constrain memory choice.

IC Role / Device Role / Timing Role: x16 LPDDR SDRAM interfacing directly to application processor memory controller using CK/CK and DQS-strobed data.

Use Value: 60-ball VFBGA footprint minimizes PCB real estate; PASR and ATCSR reduce average system power during video playback/idle.

Wearable Device Buffer Memory IoT Edge Node Runtime Memory

Use Scenario: Frame buffer and application stack memory in GPS-enabled smartwatches with constrained battery capacity.

IC Role / Device Role / Timing Role: Low-voltage mobile DRAM supporting Deep Power Down mode for >90% duty-cycle sleep states.

Use Value: IDD6 < 10μA in DPD mode extends weeks-long battery life; clock stop capability eliminates dynamic power during idle intervals.

Use Scenario: Runtime memory for sensor fusion and local inference in industrial IoT gateways operating in −40°C to +85°C environments.

IC Role / Device Role / Timing Role: Industrial-grade LPDDR SDRAM delivering reliable operation across full temperature range with validated tREFI stability.

Use Value: Guaranteed 64ms refresh interval and ATCSR ensure data retention without host intervention across thermal transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR1 memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT46H32M16LFCK-6 IT:F Same 256Mb x16 LPDDR1 density, 60-ball VFBGA, CL=2/3, but rated for −40°C to +85°C with tighter tAC skew spec Preferred for designs requiring JEDEC-compliant LPDDR1 timing margin validation and automotive-adjacent qualification Choose if system-level timing closure requires stricter AC parameter guarantees than W948D2FBJX6E's published specs
ELPIDA EDF8164AFA-6J-F Identical 256Mb x16 LPDDR1 spec, same 60-ball VFBGA, but discontinued; limited availability and no long-term supply assurance Suitable only for legacy repair or short-run production where obsolescence risk is acceptable Not recommended for new designs due to end-of-life status; W948D2FBJX6E offers active supply and Winbond lifecycle support

Compared with MT46H32M16LFCK-6 IT:F and ELPIDA EDF8164AFA-6J-F, W948D2FBJX6E provides verified industrial temperature operation, active manufacturing status, and Winbond's documented PASR/ATCSR implementation - making it the preferred choice for cost-sensitive, volume production of portable electronics.

Availability

W948D2FBJX6E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet main memory designs, and wearable device buffer implementations requiring stable component supply, consistent LPDDR1 timing compliance, and industrial temperature support.

Supply support for W948D2FBJX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

W948D2FBJX6E belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for battery-powered portable devices needing high bandwidth, low active/standby power, and compact packaging.

FAQ

What is the package type and ball count for W948D2FBJX6E?

W948D2FBJX6E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch, conforming to LPDDR x16 standard layout. This compact footprint is optimized for space-constrained mobile PCBs and matches the pin assignment shown in Section 3.1 of the official datasheet.

Does W948D2FBJX6E support CAS latency of 2 and 3?

Yes, W948D2FBJX6E supports programmable CAS latency of 2 or 3, configured via bits A4–A6 in the Mode Register. CL=2 enables lower read access latency for time-critical operations, while CL=3 provides additional timing margin for higher-frequency or longer-trace interfaces - both are fully supported per datasheet Section 6.2.2.

What power-saving features does W948D2FBJX6E implement?

W948D2FBJX6E implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), Power Down Mode, Deep Power Down (DPD) Mode, and Clock Stop capability. These features collectively reduce standby current and extend battery life in portable applications without compromising data retention or wake-up latency.

Is W948D2FBJX6E compatible with LPDDR1 controllers?

Yes, W948D2FBJX6E is a JEDEC-compliant LPDDR1 SDRAM and interoperates with standard LPDDR1 memory controllers. Its command set (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, etc.), timing parameters (tRCD, tRP, tRC), and electrical interface (differential CK/CK, DQS-strobed DQ) align with LPDDR1 specification requirements.

What is the refresh requirement for W948D2FBJX6E?

W948D2FBJX6E requires a 64ms refresh interval (tREFI) to maintain data integrity. For the x16 configuration, this translates to 7.8μs per bank refresh cycle. The device supports both AUTO REFRESH and SELF REFRESH modes, with ATCSR dynamically adjusting refresh rate based on junction temperature.

W948D2FBJX6E Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
90-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR
Memory Size:
256Mbit
Memory Organization:
8M x 32
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
5 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-25°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
90-VFBGA (8x13)

W948D2FBJX6E FAQ

1.How can I place an order for W948D2FBJX6E through Aetrix?

Please submit a Request for Quotation (RFQ) for W948D2FBJX6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W948D2FBJX6E reliable?

The price and inventory of W948D2FBJX6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D2FBJX6E is usually 5 days.

3.What payment methods are accepted for W948D2FBJX6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D2FBJX6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W948D2FBJX6E?

W948D2FBJX6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W948D2FBJX6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W948D2FBJX6E?

For technical support, including W948D2FBJX6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D2FBJX6E requirements.

6.How does Aetrix verify that W948D2FBJX6E is sourced from the original manufacturer or authorized distributors?

All W948D2FBJX6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D2FBJX6E meets industry standards.

7.What is the process for return or replacement of W948D2FBJX6E?

All W948D2FBJX6E units undergo pre-shipment inspection (PSI). If there is an issue with W948D2FBJX6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W948D2FBJX6E part is unused and in its original packaging.

Return procedure for W948D2FBJX6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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