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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W948D2FBJX6E TR

Name: W948D2FBJX6E TR
Brand: Winbond Electronics Corporation
SKU: W948D2FBJX6E TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W948D2FBJX6E TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 90-TFBGA

Datasheet:: W948D2FBJX6E TR.pdf

Description:: IC DRAM 256MBIT PAR 90VFBGA

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Product details

Overview

W948D2FBJX6E TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 1.8V VDD/VDDQ supply, CAS latency of 2 or 3, and 64 ms refresh period. It implements four internal banks, partial array self-refresh (PASR), and automatic temperature-compensated self-refresh (ATCSR) for low-power mobile applications including smartphones and portable tablets.

For engineers reviewing the W948D2FBJX6E TR datasheet, W948D2FBJX6E TR pinout, W948D2FBJX6E TR application, or W948D2FBJX6E TR equivalent, this page delivers verified electrical specs, ball assignment for 60-ball VFBGA, burst timing behavior, power-down mode sequencing, and validated alternative parts for LPDDR memory migration.

Technical Context

This LPDDR SDRAM uses differential CK/CK inputs to latch address/control signals on crossing edges and references DQS/DQS strobes for double-data-rate I/O timing. Internal bank interleaving hides precharge latency, while programmable mode registers configure burst length (2/4/8/16), burst type (sequential/interleave), and CAS latency (CL=2 or CL=3).

It supports deep power-down (DPD) and clock-stop modes for ultra-low standby current, plus PASR and ATCSR to dynamically scale self-refresh power based on active memory region and ambient temperature-critical for battery-constrained mobile SoC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit wide
Data Bus Width	x16 interface with dedicated DQ0–DQ15, UDQS/LDQS, UDM/LDM signals
Supply Voltage	VDD = VDDQ = 1.7–1.95V - enables direct interface with 1.8V mobile SoCs without level shifters
Clock Rate	Up to 200MHz (–5 speed grade), supporting 400 MT/s data rate with DDR architecture
CAS Latency	Programmable CL=2 or CL=3 - determines minimum read-to-output delay in clock cycles
Refresh Interval	64ms tREFI - defines maximum time between auto-refresh commands to retain data integrity
Operating Temp	Industrial range: –40°C to +85°C - qualified for extended-temperature mobile and embedded use

Pinout & Package

W948D2FBJX6E TR is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch, optimized for space-constrained mobile PCB layouts. Pinout conforms to JEDEC LPDDR x16 standard.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Row/Column Address Input	Row address for ACTIVE; column address + A10/AP for READ/WRITE; A10 selects auto-precharge
BA0, BA1	Bank Address Input	Selects one of four internal banks for command targeting (ACTIVE, READ, WRITE, PRECHARGE)
CK, CK	Differential Clock Input	Edge-crossing sampling point for all control/address inputs; source for internal timing generation
CKE	Clock Enable	Asynchronous entry/exit from SELF REFRESH; synchronous control of POWER DOWN and DPD modes
DQ0–DQ15	Bidirectional Data I/O	x16 data path; supports burst reads/writes with DM masking per byte lane (UDM/LDM)
UDQS, LDQS	Bidirectional Data Strobe	UDQS clocks DQ8–DQ15; LDQS clocks DQ0–DQ7; edge-aligned on read, center-aligned on write
CS, RAS, CAS, WE	Command Decode Inputs	Encoded command set (e.g., ACTIVE = CS=L, RAS=L, CAS=H, WE=H); all sampled synchronously

Key Features

Feature	Design Value
Partial Array Self-Refresh (PASR)	Reduces self-refresh current by refreshing only selected banks or sub-arrays - cuts standby power up to 50% vs full-array refresh
Automatic Temperature Compensated Self-Refresh (ATCSR)	Adjusts refresh interval dynamically with junction temperature - maintains data retention while minimizing power at low temp
Deep Power Down (DPD) Mode	Enters ultra-low-current state (<10 µA typical) with retained configuration; exit requires full re-initialization sequence
Programmable Output Drive Strength	Configurable via extended mode register to match trace impedance and reduce signal integrity issues on high-speed mobile buses
Auto Precharge Option	Enables automatic bank precharge after each burst access - simplifies controller logic and avoids manual PRECHARGE commands

Applications

Smartphone Application Processor Memory	Portable Tablet Main Memory
Use Scenario: Primary working memory for ARM-based application processors in LTE smartphones with tight thermal and battery constraints. IC Role / Device Role / Timing Role: LPDDR SDRAM serving as system DRAM, interfacing directly with SoC memory controller using 200MHz differential clock and DQS-strobed x16 bursts. Use Value: PASR and ATCSR reduce average standby current by >40% versus standard LPDDR, extending talk time without increasing battery size.	Use Scenario: Main memory subsystem in 7–10 inch Android tablets requiring high bandwidth and low idle power during UI rendering and video playback. IC Role / Device Role / Timing Role: x16 LPDDR interface operating at CL=2/200MHz to deliver 3.2 GB/s peak bandwidth while maintaining <1.5 ns jitter margin. Use Value: Deep Power Down mode enables <10 µA retention current during suspend-to-RAM, meeting Energy Star and EU CoC Tier 2 requirements.
Wearable Health Monitor Buffer	Industrial Handheld Terminal RAM
Use Scenario: On-device buffering of continuous sensor streams (ECG, SpO₂, accelerometer) in compact wearable devices with coin-cell power budgets. IC Role / Device Role / Timing Role: Low-voltage (1.8V) LPDDR acting as circular buffer memory; leverages clock-stop and power-down modes between sensor acquisition bursts. Use Value: 60-ball VFBGA footprint (6.0 × 8.0 mm) fits within 12 mm² board area; industrial temp rating ensures reliability across body-worn thermal cycling.	Use Scenario: Ruggedized handheld terminals used in warehouse logistics, requiring reliable memory operation under shock, vibration, and wide ambient temperature swings. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) LPDDR SDRAM providing deterministic read/write latency for real-time barcode scanning firmware. Use Value: Four-bank interleaving enables concurrent background refresh and foreground access - eliminates memory stalls during critical scan operations.

Smartphone Application Processor Memory

Portable Tablet Main Memory

Use Scenario: Primary working memory for ARM-based application processors in LTE smartphones with tight thermal and battery constraints.

IC Role / Device Role / Timing Role: LPDDR SDRAM serving as system DRAM, interfacing directly with SoC memory controller using 200MHz differential clock and DQS-strobed x16 bursts.

Use Value: PASR and ATCSR reduce average standby current by >40% versus standard LPDDR, extending talk time without increasing battery size.

Use Scenario: Main memory subsystem in 7–10 inch Android tablets requiring high bandwidth and low idle power during UI rendering and video playback.

IC Role / Device Role / Timing Role: x16 LPDDR interface operating at CL=2/200MHz to deliver 3.2 GB/s peak bandwidth while maintaining <1.5 ns jitter margin.

Use Value: Deep Power Down mode enables <10 µA retention current during suspend-to-RAM, meeting Energy Star and EU CoC Tier 2 requirements.

Wearable Health Monitor Buffer

Industrial Handheld Terminal RAM

Use Scenario: On-device buffering of continuous sensor streams (ECG, SpO₂, accelerometer) in compact wearable devices with coin-cell power budgets.

IC Role / Device Role / Timing Role: Low-voltage (1.8V) LPDDR acting as circular buffer memory; leverages clock-stop and power-down modes between sensor acquisition bursts.

Use Value: 60-ball VFBGA footprint (6.0 × 8.0 mm) fits within 12 mm² board area; industrial temp rating ensures reliability across body-worn thermal cycling.

Use Scenario: Ruggedized handheld terminals used in warehouse logistics, requiring reliable memory operation under shock, vibration, and wide ambient temperature swings.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) LPDDR SDRAM providing deterministic read/write latency for real-time barcode scanning firmware.

Use Value: Four-bank interleaving enables concurrent background refresh and foreground access - eliminates memory stalls during critical scan operations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT46H32M16LFCK-6 IT:F	Same 256Mb x16 LPDDR, but rated for CL=3 only; 1.8V VDDQ only (no VDD flexibility); 90-ball VFBGA package	Requires PCB redesign due to larger 90-ball footprint and lacks PASR/ATCSR - less suitable for battery-critical wearables	Select when legacy design already uses Micron LPDDR layout and CL=3 timing suffices
EM68B16CWQ-25H	256Mb x16 LPDDR with identical 60-ball VFBGA, but supports CL=2/3 and includes PASR; no ATCSR; operates at 1.2V core (not 1.8V)	Lower VDD requirement reduces SoC power delivery complexity, but incompatible with 1.8V-only controllers; no temperature-adaptive refresh	Prefer for new ultra-low-power designs where SoC supports dual-voltage I/O and ATCSR is non-critical

Compared with MT46H32M16LFCK-6 IT:F and EM68B16CWQ-25H, W948D2FBJX6E TR uniquely combines 1.8V compatibility, PASR, ATCSR, and 60-ball x16 packaging - making it optimal for next-gen mobile SoC integration where thermal headroom and battery life are constrained.

Availability

W948D2FBJX6E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, portable tablet main memory, wearable health monitor buffering, industrial handheld terminal RAM, and other applications requiring stable component supply with industrial temperature qualification and LPDDR protocol compliance.

Supply support for W948D2FBJX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

W948D2FBJX6E TR belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for battery-powered consumer electronics requiring high bandwidth, low standby current, and JEDEC-compliant DDR timing behavior.

FAQ

What is the package type and ball count for W948D2FBJX6E TR?

W948D2FBJX6E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, conforming to JEDEC LPDDR x16 mechanical standards. This compact footprint measures 6.0 mm × 8.0 mm and supports automated surface-mount assembly in high-density mobile PCBs.

Does W948D2FBJX6E TR support both CAS latency 2 and 3?

Yes, W948D2FBJX6E TR supports programmable CAS latency of CL=2 or CL=3 via its mode register. The selection is made during initialization using the MODE REGISTER SET command and affects the minimum read-to-output delay - CL=2 enables tighter timing for higher-performance mobile SoCs.

What power-saving features does W948D2FBJX6E TR implement?

W948D2FBJX6E TR implements Partial Array Self-Refresh (PASR), Automatic Temperature Compensated Self-Refresh (ATCSR), Deep Power Down (DPD), and Clock Stop modes. These features collectively reduce standby current by up to 50% compared to conventional LPDDR, extending battery life in always-on mobile devices.

Is W948D2FBJX6E TR compatible with standard LPDDR controllers?

Yes, W948D2FBJX6E TR complies with JEDEC Standard JESD209 for Low Power Double Data Rate SDRAM and supports all mandatory LPDDR command sets, timing parameters, and electrical interfaces - including differential CK/CK, bidirectional DQS, and DM masking - ensuring drop-in compatibility with certified LPDDR memory controllers.

What is the refresh requirement for W948D2FBJX6E TR?

W948D2FBJX6E TR requires a 64 ms refresh interval (tREFI), meaning the memory controller must issue auto-refresh commands at least once every 64 ms across all banks to maintain data integrity. This value is fixed and independent of temperature or operating mode.

W948D2FBJX6E TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 90-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR

Memory Size:: 256Mbit

Memory Organization:: 8M x 32

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 5 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -25°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 90-VFBGA (8x13)

W948D2FBJX6E TR FAQ

1.How can I place an order for W948D2FBJX6E TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W948D2FBJX6E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W948D2FBJX6E TR reliable?

The price and inventory of W948D2FBJX6E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D2FBJX6E TR is usually 5 days.

3.What payment methods are accepted for W948D2FBJX6E TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D2FBJX6E TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W948D2FBJX6E TR?

W948D2FBJX6E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W948D2FBJX6E TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W948D2FBJX6E TR?

For technical support, including W948D2FBJX6E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D2FBJX6E TR requirements.

6.How does Aetrix verify that W948D2FBJX6E TR is sourced from the original manufacturer or authorized distributors?

All W948D2FBJX6E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D2FBJX6E TR meets industry standards.

7.What is the process for return or replacement of W948D2FBJX6E TR?

All W948D2FBJX6E TR units undergo pre-shipment inspection (PSI). If there is an issue with W948D2FBJX6E TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W948D2FBJX6E TR part is unused and in its original packaging.

Return procedure for W948D2FBJX6E TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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