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Winbond Electronics Corporation W948D6FB2X5J

Name: W948D6FB2X5J
Brand: Winbond Electronics Corporation
SKU: W948D6FB2X5J
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W948D6FB2X5J

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: -

Datasheet:: W948D6FB2X5J.pdf

Description:: IC DRAM 256MBIT PARALLEL 200MHZ

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Product details

Overview

W948D6FB2X5J from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate (–6 speed grade), 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and four internal banks - used for low-power memory buffering in portable SoC platforms including smartphones and tablets.

For engineers reviewing the W948D6FB2X5J datasheet, W948D6FB2X5J pinout, W948D6FB2X5J application, or W948D6FB2X5J equivalent, key selection criteria include LPDDR timing compliance (tRP = 15ns, tRFC = 120ns), PASR/ATCSR power management support, VFBGA-60 package compatibility, and burst-length programmability (2/4/8/16) for bandwidth optimization in battery-constrained designs.

Technical Context

This LPDDR SDRAM implements differential clock inputs (CK/CK̄), bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible signaling to meet JEDEC JESD209-1 LPDDR specifications. It supports auto-precharge, partial array self-refresh (PASR), and automatic temperature-compensated self-refresh (ATCSR) to reduce active and standby power in mobile systems.

Initialization requires strict sequencing: 200μs stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register Set (MRS) and Extended Mode Register Set (EMRS). The device uses A10/AP for auto-precharge control and BA0/BA1 to select among four independent banks for interleaved access.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit wide
Clock Rate	166MHz (–6 speed grade), enabling 333MT/s data transfer rate with double-data-rate operation
CAS Latency	CL = 2 or 3 cycles - determines minimum read-to-output delay; impacts timing margin in high-speed controller interfaces
Burst Length	Programmable 2, 4, 8, or 16 - defines consecutive column accesses per READ/WRITE command; affects bus efficiency and prefetch alignment
Refresh Interval	64ms standard refresh period; tREFI = 7.8μs for x16 configuration - dictates refresh scheduler overhead in memory controller firmware
Supply Voltage	VDD = VDDQ = 1.7–1.95V - requires tightly regulated dual-rail LDO or DC-DC; enables low-voltage operation critical for mobile battery life
Operating Temperature	–25°C to +85°C (Extended grade) - validated for consumer handheld thermal profiles without derating

Pinout & Package

W948D6FB2X5J is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch, optimized for space-constrained mobile PCB layouts. Pin assignment follows JEDEC-standard LPDDR x16 ballout.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Row/Column Address Input	Row address (A0–A12) for ACTIVE; column address (A0–A8) + A10/AP for AUTO PRECHARGE control during READ/WRITE
BA0, BA1	Bank Address Input	Selects one of four internal banks for concurrent command execution; enables bank-level interleaving to hide precharge latency
CK, CK̄	Differential Clock Input	Samples all address/control on rising edge of CK/falling edge of CK̄; defines timing reference for all DDR operations
UDQS, LDQS	Bidirectional Data Strobe	Edge-aligned with read data; center-aligned with write data; used to capture DQ0–DQ7 (LDQS) and DQ8–DQ15 (UDQS)
UDM, LDM	Data Mask Input	LDM masks DQ0–DQ7; UDM masks DQ8–DQ15 during WRITE; sampled on both DQS edges for precise byte masking
CS, RAS, CAS, WE	Command Bus Inputs	Encoded together with BA0/BA1 to issue ACTIVE, READ, WRITE, PRECHARGE, MRS, and REFRESH commands
VDD, VSS	Core Power/Ground	Supplies input buffers and internal logic; decoupling required within 10mm of package for noise immunity
VDDQ, VSSQ	I/O Power/Ground	Isolated supply for DQ/DQS/DM drivers - reduces switching noise coupling into core logic and improves signal integrity

Key Features

Feature	Design Value
Partial Array Self-Refresh (PASR)	Reduces self-refresh current by refreshing only active memory subarrays - cuts standby power up to 50% when partial memory regions are idle
Automatic Temperature Compensated Self-Refresh (ATCSR)	Adjusts refresh rate dynamically based on die temperature - maintains data retention across –25°C to +85°C without host intervention
Deep Power Down (DPD) Mode	Enters ultra-low-current state (<10μA) with full context retention; exit time <100μs - ideal for rapid suspend/resume in UI-responsive devices
Programmable Output Drive Strength	Configurable via EMRS to match trace impedance and reduce EMI - supports 30Ω, 40Ω, and 60Ω driver settings for layout flexibility
Four Independent Banks	Enables bank-interleaved access - allows one bank to be precharged while another is active, hiding tRP latency and sustaining >80% bus utilization

Applications

Smartphone Application Processor Memory	Tablet GPU Frame Buffer
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in sub-6-inch smartphones. IC Role / Device Role / Timing Role: Primary LPDDR interface memory providing 333MT/s bandwidth to CPU/GPU subsystems with low-latency random access. Use Value: Enables responsive UI rendering and background app multitasking under 1.8V supply constraints while meeting JEDEC LPDDR timing budgets (tRCD = 15ns, tRP = 15ns).	Use Scenario: Dedicated frame buffer memory for Mali or PowerVR GPUs in 7–10 inch Android tablets. IC Role / Device Role / Timing Role: High-bandwidth, low-power graphics memory supporting 1280×800 @ 60Hz display output with burst-mode pixel streaming. Use Value: Delivers sustained 2.6GB/s effective bandwidth using CL=3 and BL=8 bursts, while PASR minimizes power during static screen periods.
Wearable OS Runtime Memory	IoT Edge AI Inference Cache
Use Scenario: System RAM for RTOS-based smartwatches and fitness trackers with constrained PCB area and battery capacity. IC Role / Device Role / Timing Role: Compact, low-leakage memory supporting real-time sensor fusion and Bluetooth LE stack execution. Use Value: VFBGA-60 footprint (5.5mm × 5.5mm) fits tight wearable layouts; ATCSR ensures reliable data retention across wrist-temperature fluctuations (25–40°C).	Use Scenario: On-device inference cache for microcontroller-based ML accelerators running TinyML models (e.g., keyword spotting, anomaly detection). IC Role / Device Role / Timing Role: Low-latency scratchpad memory for weight/activation buffering during quantized neural network layer execution. Use Value: Deep Power Down mode reduces idle power to <10μA - extends battery life in always-on edge nodes without compromising wake-from-sleep latency (<100μs).

Smartphone Application Processor Memory

Tablet GPU Frame Buffer

Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in sub-6-inch smartphones.

IC Role / Device Role / Timing Role: Primary LPDDR interface memory providing 333MT/s bandwidth to CPU/GPU subsystems with low-latency random access.

Use Value: Enables responsive UI rendering and background app multitasking under 1.8V supply constraints while meeting JEDEC LPDDR timing budgets (tRCD = 15ns, tRP = 15ns).

Use Scenario: Dedicated frame buffer memory for Mali or PowerVR GPUs in 7–10 inch Android tablets.

IC Role / Device Role / Timing Role: High-bandwidth, low-power graphics memory supporting 1280×800 @ 60Hz display output with burst-mode pixel streaming.

Use Value: Delivers sustained 2.6GB/s effective bandwidth using CL=3 and BL=8 bursts, while PASR minimizes power during static screen periods.

Wearable OS Runtime Memory

IoT Edge AI Inference Cache

Use Scenario: System RAM for RTOS-based smartwatches and fitness trackers with constrained PCB area and battery capacity.

IC Role / Device Role / Timing Role: Compact, low-leakage memory supporting real-time sensor fusion and Bluetooth LE stack execution.

Use Value: VFBGA-60 footprint (5.5mm × 5.5mm) fits tight wearable layouts; ATCSR ensures reliable data retention across wrist-temperature fluctuations (25–40°C).

Use Scenario: On-device inference cache for microcontroller-based ML accelerators running TinyML models (e.g., keyword spotting, anomaly detection).

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for weight/activation buffering during quantized neural network layer execution.

Use Value: Deep Power Down mode reduces idle power to <10μA - extends battery life in always-on edge nodes without compromising wake-from-sleep latency (<100μs).

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT46H32M16LFCK-6 IT	Same 256Mb x16 LPDDR, –6 speed grade, but Micron part uses 0.4mm-pitch VFBGA-60 and specifies tRFC = 110ns (vs. 120ns for W948D6FB2X5J)	Validated for automotive infotainment head units (AEC-Q200 Grade 3); less common in consumer handhelds due to longer qualification lead times	Choose for AEC-Q200-compliant designs requiring tighter tRFC margin; verify PCB padstack compatibility with 0.4mm vs. 0.5mm ball pitch
NT5CB128M16CP-EK	Nanya 256Mb x16 LPDDR with –6 speed grade; identical VFBGA-60 package and 1.7–1.95V supply, but supports only CL=3 (no CL=2 option)	Targeted at cost-sensitive IoT modules where fixed CL=3 simplifies controller initialization and reduces firmware complexity	Choose when CL=2 is not required and BOM cost reduction is prioritized; confirm controller supports fixed-latency initialization flow

Compared with MT46H32M16LFCK-6 IT and NT5CB128M16CP-EK, W948D6FB2X5J offers dual CAS latency (CL=2/3) flexibility and JEDEC-compliant PASR/ATCSR implementation - making it optimal for consumer mobile SoCs needing adaptive power-performance tuning without automotive qualification overhead.

Availability

W948D6FB2X5J is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, IoT edge AI inference cache, and portable medical monitor data buffering requiring stable component supply across multi-year production cycles.

Supply support for W948D6FB2X5J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

W948D6FB2X5J belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for battery-powered portable electronics requiring JEDEC-compliant low-voltage, low-power, high-bandwidth memory with robust thermal management features.

FAQ

What is the package type and ball count for W948D6FB2X5J?

W948D6FB2X5J uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch. This matches the LPDDR x16 ball assignment specified in the official Winbond datasheet revision A01-004, and is distinct from the 90-ball VFBGA used for x32 variants like W948D2FB.

Does W948D6FB2X5J support both CAS latency 2 and 3?

Yes, W948D6FB2X5J supports programmable CAS latency of 2 or 3, configured via bits A4–A6 in the Mode Register. This dual-CL capability allows system designers to optimize between timing margin (CL=3) and latency-critical performance (CL=2) depending on controller capabilities and PCB layout quality.

What power-saving modes does W948D6FB2X5J implement?

W948D6FB2X5J implements Partial Array Self-Refresh (PASR), Automatic Temperature Compensated Self-Refresh (ATCSR), Power Down Mode, Deep Power Down (DPD) Mode, and Clock Stop capability. These features collectively reduce standby current to <10μA in DPD mode and enable dynamic power scaling across operating temperatures.

How is bank addressing implemented on W948D6FB2X5J?

W948D6FB2X5J uses two dedicated bank address inputs - BA0 and BA1 - to select among its four internal banks (BANK#0 to BANK#3). This enables true bank-level interleaving, allowing concurrent row activation and column access across banks to hide precharge (tRP) and activate (tRCD) delays in high-throughput memory workloads.

What is the required initialization sequence for W948D6FB2X5J?

W948D6FB2X5J requires a strict 11-step initialization: (1) power ramp with CKE high, (2) apply stable clock, (3) wait ≥200μs with NOP/DESELECT, (4) PRECHARGE ALL, (5) wait tRP, (6) two AUTO REFRESH commands with tRFC gaps, (7) configure Mode Register, (8) wait tMRD, (9) configure Extended Mode Register, (10) wait tMRD, (11) device ready. Skipping any step risks undefined behavior.

W948D6FB2X5J Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: -

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR

Memory Size:: 256Mbit

Memory Organization:: 16M x 16

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 5 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 105°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

W948D6FB2X5J FAQ

1.How can I place an order for W948D6FB2X5J through Aetrix?

Please submit a Request for Quotation (RFQ) for W948D6FB2X5J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W948D6FB2X5J reliable?

The price and inventory of W948D6FB2X5J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6FB2X5J is usually 5 days.

3.What payment methods are accepted for W948D6FB2X5J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6FB2X5J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W948D6FB2X5J?

W948D6FB2X5J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W948D6FB2X5J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W948D6FB2X5J?

For technical support, including W948D6FB2X5J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6FB2X5J requirements.

6.How does Aetrix verify that W948D6FB2X5J is sourced from the original manufacturer or authorized distributors?

All W948D6FB2X5J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6FB2X5J meets industry standards.

7.What is the process for return or replacement of W948D6FB2X5J?

All W948D6FB2X5J units undergo pre-shipment inspection (PSI). If there is an issue with W948D6FB2X5J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W948D6FB2X5J part is unused and in its original packaging.

Return procedure for W948D6FB2X5J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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