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Winbond Electronics Corporation W948D6FBHX5E
- Part No.:
- W948D6FBHX5E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W948D6FBHX5E.pdf
- Description:
- IC DRAM 256MBIT PAR 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,525
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Product details
Overview
W948D6FBHX5E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate (–6 speed grade), 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and four internal banks - designed for low-power mobile applications requiring burst-oriented memory access with PASR and ATCSR support.
For engineers reviewing the W948D6FBHX5E datasheet, W948D6FBHX5E pinout, W948D6FBHX5E application, or W948D6FBHX5E equivalent, key selection criteria include LPDDR interface compliance, VFBGA-60 package compatibility, deep power-down mode timing, burst-length programmability, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
This LPDDR SDRAM implements a synchronous double-data-rate architecture with differential CK/CK inputs, bidirectional DQS strobes, and programmable output drive strength. It supports sequential or interleaved burst types across burst lengths of 2, 4, 8, or 16, with auto-precharge and partial array self-refresh (PASR) enabling dynamic power optimization per bank.
Initialization requires strict sequencing: stable power with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register configuration. The device enters Deep Power Down (DPD) mode via EMRS command and exits asynchronously - critical for ultra-low standby current in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (4 banks × 4,096 rows × 2,048 columns × 16-bit) |
| Data Bus Width | x16 - matches 16-bit LPDDR controller interfaces without data bus multiplexing |
| Clock Rate | 166MHz (–6 speed grade) - defines maximum tCK = 6.0ns cycle time for timing budgeting |
| CAS Latency | CL = 2 or 3 - determines read data valid delay relative to read command edge |
| Supply Voltage | VDD/VDDQ = 1.7–1.95V - single-supply LPDDR interface compatible with mobile SoC I/O domains |
| Refresh Interval | 64ms - mandates minimum refresh command frequency to retain data integrity |
| Operating Temperature | –40°C to +85°C (Industrial grade) - qualified for extended thermal environments in handheld devices |
| Package | 60-ball VFBGA (5.0mm × 8.0mm × 0.6mm) - surface-mount footprint optimized for thin mobile PCBs |
Pinout & Package
W948D6FBHX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, designed for high-density mobile PCB layouts and thermal performance in space-constrained applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 functions as Auto Precharge enable during READ/WRITE |
| BA0, BA1 | Bank Select | Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands |
| CK, CK | Differential Clock Input | Samples all control/address on rising edge of CK/falling edge of CK; defines timing reference |
| CKE | Clock Enable | Controls internal clock gating; LOW enables POWER DOWN, SELF REFRESH, or ACTIVE POWER DOWN |
| CS, RAS, CAS, WE | Command Decode Inputs | Encode all commands (ACTIVE, READ, WRITE, PRECHARGE, MRS, etc.) per JEDEC LPDDR standard |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports double-data-rate transfers synchronized to DQS edges |
| UDQS, LDQS | Data Strobe | UDQS clocks DQ8–DQ15; LDQS clocks DQ0–DQ7; edge-aligned on read, center-aligned on write |
| UDM, LDM | Data Mask Input | LDM masks DQ0–DQ7; UDM masks DQ8–DQ15; sampled on both DQS edges during WRITE |
| VDD, VSS | Core Power/Ground | Supplies internal logic and command decoder; must ramp simultaneously with VDDQ to prevent latch-up |
| VDDQ, VSSQ | I/O Power/Ground | Separate supply for DQ/DQS/DM drivers - isolates noise-sensitive I/O from core switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - cuts standby power in multi-bank partial-use scenarios |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh interval based on die temperature - maintains data retention while minimizing unnecessary refresh cycles |
| Deep Power Down (DPD) Mode | Lowest power state (<10µA typical); entered via EMRS command and exited asynchronously - ideal for long idle periods |
| Programmable Output Drive Strength | Configurable via Extended Mode Register - allows signal integrity tuning for varying trace lengths and loading conditions |
| Four Independent Banks | Enables bank interleaving to hide precharge and activate delays - improves effective bandwidth in burst-heavy workloads |
| LVCMOS Interface Compliance | Fully compatible with mobile SoC LPDDR I/O standards - no level-shifting required in host system design |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors in mid-tier smartphones with display resolution up to HD+. IC Role / Device Role / Timing Role: LPDDR SDRAM providing burst-accessed code/data storage with CL=2/3 timing alignment to processor memory controller. Use Value: PASR and ATCSR reduce average system power by 18–22% during UI idle and background app refresh cycles. |
Use Scenario: Dedicated frame buffer for Mali-T860 GPU in Android tablets supporting dual-display output. IC Role / Device Role / Timing Role: x16 LPDDR interface synchronizing pixel data reads/writes at 166MHz with precise DQS-aligned capture. Use Value: Four-bank architecture enables concurrent rendering and display fetch, sustaining >1.2GB/s effective bandwidth under mixed workload. |
| Wearable OS Runtime Memory | IoT Edge Node Sensor Cache |
Use Scenario: Primary RAM for RTOS execution and sensor fusion algorithms in GPS-enabled smartwatches. IC Role / Device Role / Timing Role: Low-voltage (1.8V) LPDDR SDRAM operating in Deep Power Down between activity bursts. Use Value: DPD mode achieves <10µA standby current - extends coin-cell battery life to 14+ days between charges. |
Use Scenario: Local cache for accelerometer, gyroscope, and environmental sensor data prior to BLE transmission. IC Role / Device Role / Timing Role: Burst-mode memory buffering sensor streams at 10kHz sampling, using auto-precharge to minimize command overhead. Use Value: Programmable drive strength ensures clean DQS timing across variable PCB trace lengths in compact module designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H64M16LFCK-6 IT | Same density (256Mb), x16, –6 speed grade, but uses 66-ball VFBGA and requires separate VDD/VDDQ decoupling per JEDEC spec | Designed for automotive infotainment; AEC-Q200 qualified but lacks PASR/ATCSR | Choose for AEC-Q200 compliance where power optimization features are secondary |
| IS42S16160F-6BLI | Same x16, 256Mb, –6 speed grade, but is standard SDR SDRAM (not LPDDR); 3.3V interface, no DQS or differential clock | Targeted at legacy industrial controllers; no low-power modes beyond standard power-down | Choose only if host controller lacks LPDDR PHY and board layout supports larger 54-pin TSOP-II footprint |
Compared with MT46H64M16LFCK-6 IT and IS42S16160F-6BLI, W948D6FBHX5E delivers unique power efficiency through PASR, ATCSR, and Deep Power Down - making it the only option among the three qualified for battery-constrained mobile and wearable platforms requiring sustained sub-100µA standby current.
Availability
W948D6FBHX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, IoT edge node sensor cache, and industrial HMI display controllers requiring stable component supply across extended product lifecycles.
Supply support for W948D6FBHX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
W948D6FBHX5E belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for energy-efficient, high-bandwidth memory subsystems in portable electronics where thermal envelope and battery life are primary constraints.
FAQ
What is the package type and ball count for W948D6FBHX5E?
W948D6FBHX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch and dimensions of 5.0mm × 8.0mm × 0.6mm. This package is specified for the x16 configuration and is optimized for thin mobile PCB assemblies requiring high interconnect density and thermal performance.
Does W948D6FBHX5E support CAS latency of 2 and 3?
Yes, W948D6FBHX5E supports configurable CAS latency of CL=2 or CL=3, set via bits A4–A6 in the Mode Register. CL=2 provides lower read access latency for real-time tasks, while CL=3 allows relaxed timing margins in thermally constrained or high-noise environments - both are fully supported at its rated 166MHz clock speed.
How does Partial Array Self Refresh (PASR) function in W948D6FBHX5E?
In W948D6FBHX5E, PASR allows selective self-refresh of only one, two, or three banks while keeping the remaining banks inactive - reducing refresh current proportionally. This feature is configured via the Extended Mode Register and is especially valuable in asymmetric workloads where only part of memory is actively used, such as UI rendering with background service caching.
What is the minimum initialization sequence required before W948D6FBHX5E accepts valid commands?
W948D6FBHX5E requires an 11-step initialization: (1) power ramp with CKE high, (2) stable clock application, (3) ≥200μs NOP/DESELECT, (4) PRECHARGE ALL, (5) ≥tRP NOP/DESELECT, (6) two AUTO REFRESH commands each followed by ≥tRFC NOP/DESELECT, (7) Mode Register Set, (8) ≥tMRD NOP/DESELECT, (9) Extended Mode Register Set, (10) ≥tMRD NOP/DESELECT, (11) ready for commands.
Is W948D6FBHX5E compatible with standard LPDDR controllers?
Yes, W948D6FBHX5E complies fully with JEDEC Standard JESD209 for Low Power Double Data Rate SDRAM. Its command encoding (CS/RAS/CAS/WE), differential CK/CK interface, DQS-strobed x16 data bus, and timing parameters (tRP, tRFC, tMRD, etc.) are interoperable with industry-standard LPDDR memory controllers found in Qualcomm Snapdragon, MediaTek Helio, and NXP i.MX application processors.
W948D6FBHX5E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W948D6FBHX5E FAQ
1.How can I place an order for W948D6FBHX5E through Aetrix?
Please submit a Request for Quotation (RFQ) for W948D6FBHX5E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W948D6FBHX5E reliable?
The price and inventory of W948D6FBHX5E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6FBHX5E is usually 5 days.
3.What payment methods are accepted for W948D6FBHX5E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6FBHX5E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W948D6FBHX5E?
W948D6FBHX5E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W948D6FBHX5E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W948D6FBHX5E?
For technical support, including W948D6FBHX5E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6FBHX5E requirements.
6.How does Aetrix verify that W948D6FBHX5E is sourced from the original manufacturer or authorized distributors?
All W948D6FBHX5E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6FBHX5E meets industry standards.
7.What is the process for return or replacement of W948D6FBHX5E?
All W948D6FBHX5E units undergo pre-shipment inspection (PSI). If there is an issue with W948D6FBHX5E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W948D6FBHX5E part is unused and in its original packaging.
Return procedure for W948D6FBHX5E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W948D6FBHX5E Tags
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M24C02-WMN6TP
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