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Winbond Electronics Corporation W948D6FBHX5E TR

Name: W948D6FBHX5E TR
Brand: Winbond Electronics Corporation
SKU: W948D6FBHX5E TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W948D6FBHX5E TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-TFBGA

Datasheet:: W948D6FBHX5E TR.pdf

Description:: IC DRAM 256MBIT PAR 60VFBGA

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Product details

Overview

W948D6FBHX5E TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 200MHz clock rate (CL=3), 1.7–1.95V VDD/VDDQ supply, and 4-bank architecture. It delivers burst lengths of 2/4/8/16 in sequential or interleave mode and supports PASR and ATCSR for dynamic power management in battery-constrained handheld devices.

For engineers reviewing the W948D6FBHX5E TR datasheet, W948D6FBHX5E TR pinout, W948D6FBHX5E TR application, or W948D6FBHX5E TR equivalent, this device requires attention to CK/CK differential clock setup, DQS-aligned timing, mode register initialization sequence, and VFBGA-60 ball mapping for x16 configuration in space-constrained mobile SoC memory subsystems.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate interface with differential CK/CK inputs, bidirectional DQS strobes, and four independently addressable banks. Its command decoder interprets CS/RAS/CAS/WE combinations while supporting auto-precharge, deep power-down, and clock-stop modes to minimize active and standby current.

Initialization mandates two auto-refresh commands, mode register programming (MRS/EMRS), and strict tMRD delays before operation. Internal timing relies on programmable CAS latency (2 or 3), burst type selection, and temperature-compensated self-refresh control via extended mode registers.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256Mb (32MB) organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit
Data Bus Width	x16 - matches 16-bit mobile processor memory interfaces; uses 60-ball VFBGA package
Max Clock Frequency	200MHz (−5 speed grade) - enables 400 MT/s data rate with DDR I/O
CAS Latency	CL = 2 or 3 - determines minimum read access delay; CL=3 used at 200MHz
Supply Voltage	VDD = VDDQ = 1.7–1.95V - low-voltage operation essential for mobile battery life
Refresh Interval	64ms - standard JEDEC LPDDR requirement; supports ATCSR for temperature-adaptive timing
Power Modes	Power Down, Deep Power Down, Clock Stop - reduce IDD to ≤10µA in DPD mode

Pinout & Package

W948D6FBHX5E TR is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) optimized for x16 mobile LPDDR interface. Pin assignments follow JEDEC-standard LPDDR x16 ballout with dedicated VDD/VSS/VDDQ/VSSQ rails, dual DQS strobes (LDQS/UDQS), and bank/address/control signals distributed for signal integrity.

Pin/Terminal	Circuit Role	Design Meaning
CK / CK	Differential clock input	Samples all address/control on crossing; defines timing reference for DDR I/O edges
LDQS / UDQS	Bidirectional data strobe	Edge-aligned with read data; center-aligned with write data for capture timing margin
DQ0–DQ15	16-bit bidirectional data bus	Transfers 2/4/8/16-word bursts; DM masking supported per byte lane
A0–A12, BA0–BA1	Row/column/bank address	A10 doubles as Auto Precharge enable; BA0/BA1 select one of four internal banks
CS, RAS, CAS, WE	Command control inputs	Encoded together to issue ACTIVE, READ, WRITE, PRECHARGE, MRS, etc.
CKE	Clock enable	Asynchronous entry to Self Refresh; synchronous control of internal clocks and I/O buffers
UDM / LDM	Write data mask	LDM masks DQ0–DQ7; UDM masks DQ8–DQ15 during write cycles

Key Features

Feature	Design Value
Partial Array Self Refresh (PASR)	Reduces refresh current by refreshing only active subarrays - cuts IDD2 by up to 40% during partial usage
Automatic Temperature Compensated Self Refresh (ATCSR)	Adjusts refresh interval dynamically based on die temperature - maintains data retention across −25°C to +85°C
Programmable output drive strength	Configurable via EMRS to match PCB trace impedance - minimizes signal reflections on high-speed mobile traces
Deep Power Down (DPD) mode	Halts all internal clocks and logic; IDD drops to ≤10µA - extends standby time in always-on mobile applications
Four independent banks	Enables bank interleaving - hides precharge latency between row activations for sustained bandwidth

Applications

Smartphone Application Processor Memory	Tablet GPU Frame Buffer
Use Scenario: Main system memory for ARM-based application processors in sub-6-inch smartphones with LTE connectivity and HD display. IC Role / Device Role / Timing Role: Primary LPDDR interface providing 400 MT/s bandwidth to CPU/GPU; operates under tight tRC/tRP timing constraints with dynamic voltage scaling. Use Value: x16 VFBGA-60 footprint enables compact SoC-package co-design; PASR and DPD extend battery life during background app sync and push notifications.	Use Scenario: Dedicated graphics memory for Mali-T860 MP4 GPU in 7–10 inch Android tablets running OpenGL ES 3.1 rendering pipelines. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting 1200×1920@60Hz display with concurrent texture fetch and render target writes. Use Value: Four-bank interleaving sustains >2.4 GB/s effective bandwidth; CL=3 timing ensures predictable pixel pipeline latency under bursty GPU workloads.
Wearable OS Runtime Memory	IoT Edge Node Sensor Cache
Use Scenario: System RAM for real-time RTOS execution in GPS-enabled smartwatches with continuous heart-rate monitoring and BLE connectivity. IC Role / Device Role / Timing Role: Low-power memory subsystem managing sensor fusion algorithms and UI rendering with aggressive clock-stop and power-down cycling. Use Value: ATCSR maintains data integrity across wrist-temperature swings (−10°C to +50°C); DPD mode reduces average current to <50µA during sleep states.	Use Scenario: Local cache for Cortex-M4-based edge node aggregating data from multiple I²C/SPI sensors before LoRaWAN transmission. IC Role / Device Role / Timing Role: Burst-access buffer staging sensor logs and firmware update chunks; initialized once at boot and accessed sporadically. Use Value: Single MRS/EMRS configuration suffices for fixed burst length and latency; minimal pin count (60-ball) simplifies 4-layer wearable PCB layout.

Smartphone Application Processor Memory

Tablet GPU Frame Buffer

Use Scenario: Main system memory for ARM-based application processors in sub-6-inch smartphones with LTE connectivity and HD display.

IC Role / Device Role / Timing Role: Primary LPDDR interface providing 400 MT/s bandwidth to CPU/GPU; operates under tight tRC/tRP timing constraints with dynamic voltage scaling.

Use Value: x16 VFBGA-60 footprint enables compact SoC-package co-design; PASR and DPD extend battery life during background app sync and push notifications.

Use Scenario: Dedicated graphics memory for Mali-T860 MP4 GPU in 7–10 inch Android tablets running OpenGL ES 3.1 rendering pipelines.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting 1200×1920@60Hz display with concurrent texture fetch and render target writes.

Use Value: Four-bank interleaving sustains >2.4 GB/s effective bandwidth; CL=3 timing ensures predictable pixel pipeline latency under bursty GPU workloads.

Wearable OS Runtime Memory

IoT Edge Node Sensor Cache

Use Scenario: System RAM for real-time RTOS execution in GPS-enabled smartwatches with continuous heart-rate monitoring and BLE connectivity.

IC Role / Device Role / Timing Role: Low-power memory subsystem managing sensor fusion algorithms and UI rendering with aggressive clock-stop and power-down cycling.

Use Value: ATCSR maintains data integrity across wrist-temperature swings (−10°C to +50°C); DPD mode reduces average current to <50µA during sleep states.

Use Scenario: Local cache for Cortex-M4-based edge node aggregating data from multiple I²C/SPI sensors before LoRaWAN transmission.

IC Role / Device Role / Timing Role: Burst-access buffer staging sensor logs and firmware update chunks; initialized once at boot and accessed sporadically.

Use Value: Single MRS/EMRS configuration suffices for fixed burst length and latency; minimal pin count (60-ball) simplifies 4-layer wearable PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT46H32M16LFCK-6 IT:F	Same density (256Mb x16), but 166MHz max (CL=2.5), 1.8V only, no ATCSR or PASR	Lacks temperature-adaptive refresh and partial-array control - less suitable for wide-temperature industrial wearables	Select when cost sensitivity outweighs thermal adaptability and ultra-low standby power needs
K4P2G324EC-AC25	2Gb density (x32), 266MHz, 1.2V core, different VFBGA-90 package - not pin-compatible	Targets higher-bandwidth tablet platforms; incompatible footprint and voltage domain	Choose only for new designs requiring ≥533 MT/s and willing to redesign layout and power delivery

Compared with MT46H32M16LFCK-6 IT:F and K4P2G324EC-AC25, W948D6FBHX5E TR uniquely balances 200MHz performance, 60-ball x16 integration, and advanced power features (PASR/ATCSR/DPD) for space- and battery-constrained mobile SoCs - making it irreplaceable in legacy-compatible, thermally variable handheld designs.

Availability

W948D6FBHX5E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, wearable OS runtime memory, and IoT edge node sensor cache applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W948D6FBHX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, PSRAM, and low-power DRAM for mobile and embedded markets.

W948D6FBHX5E TR belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-powered handheld devices requiring JEDEC-compliant low-voltage, low-standby-current memory with robust thermal management and compact packaging.

FAQ

What is the correct initialization sequence for W948D6FBHX5E TR?

W948D6FBHX5E TR requires a strict 11-step initialization: (1) ramp VDD/VDDQ with CKE high, (2) apply stable clock, (3) wait ≥200µs with NOP/DESELECT, (4) PRECHARGE ALL, (5) wait tRP, (6) issue two AUTO REFRESH commands each followed by tRFC delay, (7) program Mode Register, (8) wait tMRD, (9) program Extended Mode Register, (10) wait tMRD, (11) device ready. Skipping any step risks undefined behavior.

Does W948D6FBHX5E TR support both sequential and interleave burst types?

Yes, W948D6FBHX5E TR supports both sequential and interleave burst types, selectable via bit A3 in the Mode Register. Sequential mode accesses column addresses in linear order (e.g., A0→A1→A2), while interleave mode uses Gray-code ordering for improved cache-line alignment in certain processor architectures. Both operate with burst lengths of 2, 4, 8, or 16.

What is the function of A10/AP on W948D6FBHX5E TR?

On W948D6FBHX5E TR, the A10 pin serves dual purpose: as address bit A10 during normal row/column access, and as the Auto Precharge (AP) enable signal during READ/WRITE commands. When A10 is HIGH during a READ or WRITE, the device automatically issues a PRECHARGE command to the accessed bank at burst completion - eliminating need for explicit PRECHARGE commands in many use cases.

How does Partial Array Self Refresh (PASR) work in W948D6FBHX5E TR?

In W948D6FBHX5E TR, PASR allows selective refresh of only active memory subarrays instead of the full 256Mb array. Controlled via Extended Mode Register bits, PASR reduces self-refresh current (IDD6) by up to 40% when only portions of memory are actively used - critical for extending battery life in smartphones during background tasks like email sync or location tracking.

Is W948D6FBHX5E TR pin-compatible with other Winbond LPDDR parts like W948D2FB?

No, W948D6FBHX5E TR is not pin-compatible with W948D2FB. While both share the same 60-ball VFBGA x16 package outline, W948D2FB is a 133MHz speed grade (−75) with CL=2 timing and different AC parameter limits. Their pinouts match electrically, but system-level timing margins, initialization requirements, and voltage tolerance differ - requiring separate validation for each speed grade.

W948D6FBHX5E TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR

Memory Size:: 256Mbit

Memory Organization:: 16M x 16

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 5 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -25°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-VFBGA (8x9)

W948D6FBHX5E TR FAQ

1.How can I place an order for W948D6FBHX5E TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W948D6FBHX5E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W948D6FBHX5E TR reliable?

The price and inventory of W948D6FBHX5E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6FBHX5E TR is usually 5 days.

3.What payment methods are accepted for W948D6FBHX5E TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6FBHX5E TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W948D6FBHX5E TR?

W948D6FBHX5E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W948D6FBHX5E TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W948D6FBHX5E TR?

For technical support, including W948D6FBHX5E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6FBHX5E TR requirements.

6.How does Aetrix verify that W948D6FBHX5E TR is sourced from the original manufacturer or authorized distributors?

All W948D6FBHX5E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6FBHX5E TR meets industry standards.

7.What is the process for return or replacement of W948D6FBHX5E TR?

All W948D6FBHX5E TR units undergo pre-shipment inspection (PSI). If there is an issue with W948D6FBHX5E TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W948D6FBHX5E TR part is unused and in its original packaging.

Return procedure for W948D6FBHX5E TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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