Winbond Electronics Corporation W948D6FBHX5G

Overview

W948D6FBHX5G from Winbond is a 256Mb mobile LPDDR SDRAM in x16 configuration, operating at 166MHz (–6 speed grade), with 1.7–1.95V VDD/VDDQ supply, four internal banks, and CAS latency of 2 or 3. It delivers burst-oriented memory access for low-power mobile SoC applications requiring high bandwidth and aggressive power management.

For engineers reviewing the W948D6FBHX5G datasheet, W948D6FBHX5G pinout, W948D6FBHX5G application, or W948D6FBHX5G equivalent, key selection criteria include its VFBGA-60 package, PASR/ATCSR support, programmable output drive strength, and compatibility with LPDDR command protocols including Deep Power Down and Clock Stop modes.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate interface with differential CK/CK inputs, bidirectional DQS strobes, and LVCMOS-compatible signaling. Its architecture supports interleaved bank operations to hide precharge latency and enables burst lengths of 2, 4, 8, or 16 with sequential or interleave addressing.

Initialization requires strict sequencing: stable power with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports Auto Precharge, Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR) for dynamic power optimization.

Key Specifications

Pinout & Package

W948D6FBHX5G uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, compliant with JEDEC MO-245AB. Pin assignment follows LPDDR x16 ball map with dedicated VDD/VSS/VDDQ/VSSQ power/ground distribution and symmetric DQ/DQS/DM placement for signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H32M16LFCK-6 IT:F and IS42S16160F-6BLI, W948D6FBHX5G provides broader temperature coverage, deeper power-state control (DPD, PASR, ATCSR), and Winbond's validated initialization sequence - making it preferred for industrial and automotive LPDDR1 deployments where reliability and power predictability are critical.

Availability

W948D6FBHX5G is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, automotive infotainment systems, and IoT edge gateway memory requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for W948D6FBHX5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, PSRAM, and low-power DRAM for mobile and embedded markets.

W948D6FBHX5G belongs to Winbond's LPDDR1 product line, designed specifically for battery-constrained portable devices requiring high bandwidth per watt and robust power-state transitions without data loss.

FAQ

What is the package type and footprint of W948D6FBHX5G?

W948D6FBHX5G uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 10.5mm × 0.6mm, with pitch of 0.5mm. Its pinout matches JEDEC LPDDR x16 standard layout, including dedicated VDD/VSS/VDDQ/VSSQ balls and symmetric DQ/DQS/DM placement for controlled impedance routing. This footprint is shared across Winbond's W948Dx series LPDDR1 devices.

Does W948D6FBHX5G support CAS latency 2 and 3, and how is it configured?

Yes, W948D6FBHX5G supports both CAS latency 2 and 3, selected via bits A4–A6 in the Mode Register during MRS command execution. CL2 enables lower read latency for time-critical accesses, while CL3 provides additional timing margin for higher-speed or marginal signal integrity conditions. The setting persists until reprogrammed or after Deep Power Down exit.

How does Partial Array Self Refresh (PASR) function in W948D6FBHX5G?

In W948D6FBHX5G, PASR allows the memory controller to specify which banks or subarrays remain active during self-refresh, reducing refresh current by skipping inactive regions. Configuration is done via Extended Mode Register bits, and the feature cuts IDD6 current significantly - verified at 1.8V and 85°C - without compromising data retention in designated arrays.

What is the minimum initialization sequence required before W948D6FBHX5G accepts valid commands?

W948D6FBHX5G requires 11-step initialization: (1) power ramp with CKE high, (2) stable clock application, (3) ≥200μs NOP/DESELECT, (4) PRECHARGE ALL, (5) tRP wait, (6) two AUTO REFRESH commands with tRFC gaps, (7) Mode Register Set, (8) tMRD wait, (9) Extended Mode Register Set, (10) tMRD wait, (11) readiness. Skipping any step risks undefined behavior.

Can W948D6FBHX5G operate in Deep Power Down mode and retain configuration registers?

Yes, W948D6FBHX5G retains Mode Register and Extended Mode Register contents during Deep Power Down mode. Upon exit (via CKE pulse), the device resumes operation with prior burst length, CAS latency, drive strength, and PASR settings intact - eliminating need for reinitialization and reducing wake-up latency to under 200ns.