Winbond Electronics Corporation W948D6FBHX5I
- Part No.:
- W948D6FBHX5I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W948D6FBHX5I.pdf
- Description:
- IC DRAM 256MBIT PAR 60VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W948D6FBHX5I from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 1.7–1.95V VDD/VDDQ supply, CAS latency 2 or 3, and 200MHz clock rate (−5 speed grade), designed for low-power mobile applications requiring burst-oriented memory access with partial array self-refresh and temperature-compensated refresh.
For engineers reviewing the W948D6FBHX5I datasheet, W948D6FBHX5I pinout, W948D6FBHX5I application, or W948D6FBHX5I equivalent, this device supports LPDDR interface timing compliance, programmable output drive strength, deep power-down mode, differential clock inputs (CK/CK), and bidirectional DQS strobes - critical for battery-constrained handheld and embedded systems.
Technical Context
This LPDDR SDRAM implements four independent internal banks enabling bank interleaving to hide precharge latency. It uses differential CK/CK inputs for command/address sampling and edge-aligned DQS for read capture, with center-aligned DQS for write data capture. Burst operation supports sequential or interleave types at lengths of 2, 4, 8, or 16.
Initialization requires two auto-refresh commands, mode register programming (MRS/EMRS), and strict tMRD delays. Power management includes power-down, deep power-down (DPD), and automatic temperature-compensated self-refresh (ATCSR) with 64 ms refresh period - all configurable via extended mode registers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit |
| Data Bus Width | x16 interface with dedicated UDQS/LDQS strobes for upper/lower byte groups |
| Clock Rate & Speed Grade | 200MHz (−5), corresponding to 400MT/s data rate with CL=2 or CL=3 |
| Supply Voltages | VDD = VDDQ = 1.7–1.95V - single-supply LVCMOS-compatible I/O and core logic |
| Refresh Interval | 64ms standard refresh period; supports ATCSR for dynamic temperature-adjusted refresh cycles |
| Power Modes | Deep Power Down (DPD), Power Down, Clock Stop, and Partial Array Self Refresh (PASR) |
| Operating Temperature | Industrial grade: −40°C to +85°C - validated for sustained operation in embedded mobile platforms |
Pinout & Package
W948D6FBHX5I is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) optimized for x16 LPDDR interface layout, with separate VDDQ/VSSQ planes for I/O noise isolation and differential CK/CK inputs for timing robustness.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address inputs; A10 functions as Auto Precharge Select (AP) |
| BA0, BA1 | Bank Address | Selects one of four internal banks for ACTIVE/READ/WRITE/PRECHARGE commands |
| CK, CK | Differential Clock | Edge-triggered command/address sampling; defines all timing windows and data valid windows |
| CKE | Clock Enable | Synchronous control of internal clocks; LOW enables power-down and self-refresh entry |
| CS, RAS, CAS, WE | Command Control | LVCMOS-level command bus; decoded together with BA and address to generate internal operations |
| DQ0–DQ15 | Data I/O | x16 bidirectional data bus; double-data-rate transfers synchronized to DQS edges |
| UDQS, LDQS | Data Strobe | UDQS clocks DQ8–DQ15; LDQS clocks DQ0–DQ7; edge-aligned on reads, center-aligned on writes |
| UDM, LDM | Data Mask | Input mask signals: UDM masks upper byte (DQ8–DQ15), LDM masks lower byte (DQ0–DQ7) |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces refresh current by selectively refreshing only active memory sub-arrays - cuts standby power in partial-use scenarios |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh interval based on die temperature - maintains data retention while minimizing unnecessary refresh cycles |
| Programmable Output Drive Strength | Configurable via extended mode register to match PCB trace impedance - improves signal integrity without external termination |
| Deep Power Down Mode (DPD) | Shuts down internal logic and I/O buffers completely - reduces ICCDPD to ≤10 µA, ideal for long idle periods |
| Burst Flexibility | Supports burst lengths 2/4/8/16 and sequential/interleave types - enables optimization for bandwidth vs. latency trade-offs |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors in smartphones with tight thermal and battery constraints. IC Role / Device Role / Timing Role: LPDDR SDRAM serving as primary working memory, interfacing directly with SoC memory controller using differential CK/CK and DQS-strobed x16 bus. Use Value: PASR and ATCSR reduce average current draw during background app refresh and ambient temperature shifts - extending battery life by up to 12% in real-world usage profiles. |
Use Scenario: Dedicated frame buffer for integrated GPU in mid-tier Android tablets requiring high-bandwidth, low-latency graphics memory. IC Role / Device Role / Timing Role: Burst-oriented memory delivering 400MT/s throughput with CL=2 latency to sustain 60fps rendering at 1280×800 resolution. Use Value: Interleaved burst mode and four-bank architecture enable concurrent texture fetch and render target writes - eliminating pipeline stalls during complex scene composition. |
| Wearable OS Runtime Memory | IoT Edge Device Cache |
|
Use Scenario: Primary RAM for RTOS-based smartwatches with aggressive sleep/wake cycling and limited PCB area. IC Role / Device Role / Timing Role: Low-voltage (1.8V nominal) LPDDR SDRAM supporting deep power-down exit in <100µs and fast initialization sequence. Use Value: DPD mode draws ≤10 µA during sleep; combined with clock stop capability, achieves sub-5µA system standby current - enabling 7-day battery life. |
Use Scenario: Local cache memory for cellular IoT modules performing sensor fusion and local inference before cloud upload. IC Role / Device Role / Timing Role: High-reliability mobile DRAM operating across −40°C to +85°C, supporting burst writes from multiple ADC channels and DMA reads for neural network acceleration. Use Value: Industrial temperature rating and ATCSR ensure consistent data retention during outdoor thermal cycling - eliminating refresh-related corruption in remote deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H32M16LFCK-6 IT | Same density (256Mb x16), but 1.8V-only supply and CL=3 only; no ATCSR or PASR support | Lacks temperature-adaptive refresh and partial-array refresh - less suitable for thermally variable environments | Prefer W948D6FBHX5I when ATCSR or PASR is required for power optimization |
| IS42S16160F-6BLI | Standard SDR SDRAM (not LPDDR); 166MHz max, no differential clocks or DQS; higher VDD (3.3V) | No low-power modes beyond standard self-refresh; incompatible LPDDR command set and timing | Not functionally comparable - W948D6FBHX5I is LPDDR-specific and not interchangeable |
Compared with MT46H32M16LFCK-6 IT and IS42S16160F-6BLI, W948D6FBHX5I delivers unique low-power advantages via ATCSR and PASR, operates at true LPDDR signaling levels (1.8V, CK/CK, DQS), and supports faster 200MHz operation - making it the only viable option for modern mobile SoC memory subsystems requiring LPDDR compliance.
Availability
W948D6FBHX5I is available at Aetrix Electronics and suitable for smartphone main memory, tablet GPU frame buffers, wearable runtime memory, and IoT edge device cache applications requiring stable component supply, industrial temperature support, and LPDDR protocol compliance.
Supply support for W948D6FBHX5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash storage, and security solutions, with over 30 years of DRAM design expertise and global manufacturing partnerships.
W948D6FBHX5I belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-powered portable devices where power efficiency, thermal resilience, and compact packaging are mandatory design constraints.
FAQ
What is the speed grade and maximum data rate of W948D6FBHX5I?
W948D6FBHX5I is a −5 speed grade device, rated for 200MHz clock frequency and 400MT/s data transfer rate. It supports CAS latency 2 or 3, and its timing parameters (e.g., tAC, tDQSS) are specified under 1.8V VDD/VDDQ and industrial temperature conditions. The −5 suffix explicitly denotes this 200MHz performance level per Winbond's ordering nomenclature.
Does W948D6FBHX5I support differential clock inputs and DQS strobing?
Yes, W948D6FBHX5I requires differential CK and CK inputs for all command/address sampling and uses bidirectional UDQS and LDQS strobes - UDQS for DQ8–DQ15 and LDQS for DQ0–DQ7. These signals are edge-aligned with read data and center-aligned with write data, meeting LPDDR specification requirements for timing precision and noise immunity.
What power-saving features are implemented in W948D6FBHX5I?
W948D6FBHX5I implements four key power-saving features: Deep Power Down (DPD) mode drawing ≤10 µA, standard Power Down mode, Clock Stop capability during idle, and advanced refresh optimizations - Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). These are configured via mode and extended mode registers during initialization.
What is the package type and ball count for W948D6FBHX5I?
W948D6FBHX5I uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, measuring 8mm × 12.5mm × 0.6mm. This x16-optimized package includes separate VDDQ/VSSQ balls for I/O power integrity and follows JEDEC MO-240AC mechanical standards - confirmed in Winbond's official package drawings and ordering information.
Is W948D6FBHX5I compatible with standard LPDDR controllers?
Yes, W948D6FBHX5I complies fully with JEDEC JESD209 LPDDR SDRAM specification. It supports all required commands (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, MRS, EMRS), timing parameters (tRP, tRFC, tMRD), and electrical characteristics (LVCMOS I/O, differential CK/CK, DQS timing). Its pinout and initialization sequence are LPDDR-standard - no controller modification is needed beyond standard LPDDR PHY configuration.
W948D6FBHX5I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W948D6FBHX5I FAQ
1.How can I place an order for W948D6FBHX5I through Aetrix?
Please submit a Request for Quotation (RFQ) for W948D6FBHX5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W948D6FBHX5I reliable?
The price and inventory of W948D6FBHX5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6FBHX5I is usually 5 days.
3.What payment methods are accepted for W948D6FBHX5I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6FBHX5I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W948D6FBHX5I?
W948D6FBHX5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W948D6FBHX5I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W948D6FBHX5I?
For technical support, including W948D6FBHX5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6FBHX5I requirements.
6.How does Aetrix verify that W948D6FBHX5I is sourced from the original manufacturer or authorized distributors?
All W948D6FBHX5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6FBHX5I meets industry standards.
7.What is the process for return or replacement of W948D6FBHX5I?
All W948D6FBHX5I units undergo pre-shipment inspection (PSI). If there is an issue with W948D6FBHX5I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W948D6FBHX5I part is unused and in its original packaging.
Return procedure for W948D6FBHX5I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W948D6FBHX5I Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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