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Winbond Electronics Corporation W948D6FBHX5I TR

Part No.:
W948D6FBHX5I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW948D6FBHX5I TR.pdf
Description:
IC DRAM 256MBIT PAR 60VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,084

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Product details

Overview

W948D6FBHX5I TR from Winbond is a 256Mb mobile LPDDR SDRAM in x16 configuration, operating at 166MHz (CL=3), with VDD/VDDQ = 1.7–1.95V, four internal banks, and support for Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). It serves as main memory in space-constrained portable devices requiring low standby power and burst-oriented data access.

For engineers reviewing the W948D6FBHX5I TR datasheet, W948D6FBHX5I TR pinout, W948D6FBHX5I TR application, or W948D6FBHX5I TR equivalent, key selection considerations include its 60-ball VFBGA package, LPDDR x16 interface timing compliance, industrial temperature range (−40°C to +85°C), and programmable output drive strength for signal integrity tuning.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate architecture with differential clock inputs (CK/CK̄), bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible signaling. Its four-bank interleaving enables concurrent row activation and hidden precharge, while burst lengths of 2/4/8/16 and sequential/interleave modes optimize bandwidth per access pattern.

Initialization requires strict sequencing: 200μs stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. Power management includes Power Down, Deep Power Down (DPD), and Clock Stop modes-all activated via CKE and command state transitions per the simplified state diagram.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit width
Data Width & Interface x16 LPDDR interface with differential CK/CK̄, bidirectional UDQS/LDQS, and DM masking for write data
Clock Rate / CAS Latency 166MHz maximum clock frequency with CL=3 (tCK = 6.0ns); supports CL=2 at lower frequencies
Supply Voltages VDD = 1.7–1.95V (core logic), VDDQ = 1.7–1.95V (I/O drivers), decoupled for noise isolation
Refresh & Power Modes 64ms refresh period; PASR reduces self-refresh current by disabling unused banks; ATCSR adjusts refresh rate vs. temperature
Operating Temperature Industrial grade: −40°C to +85°C, qualified for sustained operation in handheld and embedded mobile platforms
Package 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6.4mm × 8.0mm × 0.6mm, JEDEC MO-240 compliant

Pinout & Package

W948D6FBHX5I TR uses a 60-ball VFBGA package optimized for mobile PCB layouts. Pin assignments follow JEDEC LPDDR x16 ballout with dedicated VSS/VSSQ ground planes, separate VDD/VDDQ supplies, and symmetric DQ/DQS/DM placement to minimize skew.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Input Row/column address bus; A10 doubles as Auto Precharge enable during READ/WRITE
BA0, BA1 Bank Address Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands
CS, RAS, CAS, WE Command Control Encoded command inputs; CS enables command decoder, RAS/CAS/WE define operation type
CK, CK̄ Differential Clock Edge-aligned sampling point for all inputs; internal PLL derives system timing; enables low-jitter DDR operation
CKE Clock Enable Synchronous control for power-down entry/exit; asynchronous wake from Self Refresh
DQ0–DQ15 Data I/O 16-bit bidirectional data bus; supports burst transfers up to 16 words per command
UDQS, LDQS Data Strobe Source-synchronous strobe: edge-aligned on read, center-aligned on write; enables precise DQ capture
UDM, LDM Data Mask Per-byte write mask: UDM covers DQ8–DQ15, LDM covers DQ0–DQ7; sampled on both DQS edges

Key Features

Feature Design Value
Partial Array Self Refresh (PASR) Reduces self-refresh current up to 50% by refreshing only active banks-critical for battery runtime extension
Automatic Temperature Compensated Self Refresh (ATCSR) Adjusts refresh interval dynamically with die temperature, eliminating over-refresh at low temps and under-refresh at high temps
Deep Power Down (DPD) Mode Lowers standby current to <10µA by shutting down internal logic and I/O buffers-enables multi-week storage without recharge
Programmable Output Drive Strength Configurable via Extended Mode Register to match PCB trace impedance, minimizing reflections and timing margin loss
Four-Bank Interleaving Enables pipelined access across banks (e.g., ACTIVE bank 0 → READ bank 1 → PRECHARGE bank 0), hiding tRP latency

Applications

Smartphone Application Memory Tablet Main Memory

Use Scenario: Primary working memory in Android-based smartphones with ARM Cortex-A series SoCs.

IC Role / Device Role / Timing Role: LPDDR x16 interface synchronized to SoC memory controller; provides burst-mode read/write access with CL=3 timing at 166MHz.

Use Value: Enables 332MB/s peak bandwidth per channel while maintaining <50µA self-refresh current via PASR during screen-off states.

Use Scenario: Main memory subsystem in 7–10 inch tablets running real-time OS or lightweight Linux.

IC Role / Device Role / Timing Role: Dual-channel memory node supporting interleaved burst reads across four banks to sustain video decode throughput.

Use Value: ATCSR prevents thermal throttling-induced refresh failures during extended video playback in ambient temperatures up to +85°C.

Industrial Handheld Terminal Medical Portable Monitor

Use Scenario: Data logging and barcode scanning terminal deployed in warehouse environments (−25°C to +70°C).

IC Role / Device Role / Timing Role: Non-volatile buffer memory interfacing with FPGA-based controller; operates in extended temperature grade.

Use Value: Deep Power Down mode extends battery life between scans by reducing quiescent current to single-digit µA levels.

Use Scenario: Patient vital sign monitor requiring FDA-compliant power reliability and data retention during brief AC outages.

IC Role / Device Role / Timing Role: Critical RAM holding real-time ECG waveform buffers; powered from isolated backup rail during main supply interruption.

Use Value: Clock Stop capability maintains valid data state with zero dynamic power while preserving readiness for immediate resume upon power restoration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT46H32M16LFCK-6 IT:F Same density (256Mb x16), but rated for 200MHz (CL=3) and uses 66-ball VFBGA; no ATCSR support Lacks temperature-adaptive refresh; requires fixed 64ms refresh interval regardless of junction temp Prefer when higher clock margin is needed and thermal variation is minimal; verify layout compatibility with larger footprint
K4P2G324EC-BCF7 2Gb density (x32), 133MHz max, 90-ball VFBGA; supports PASR but not DPD mode Higher capacity but incompatible pinout and interface width; requires SoC LPDDR x32 support Only viable if system design allows x32 upgrade path and board re-spin; not drop-in replaceable

Compared with MT46H32M16LFCK-6 IT:F and K4P2G324EC-BCF7, W948D6FBHX5I TR uniquely balances industrial temperature resilience, ultra-low deep-sleep current, and adaptive refresh-making it optimal for battery-powered portable devices where thermal and power constraints dominate.

Availability

W948D6FBHX5I TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, industrial handheld terminals, medical portable monitors, and tablet main memory designs requiring stable component supply across long production lifecycles.

Supply support for W948D6FBHX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

W948D6FBHX5I TR belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for space- and power-constrained portable electronics requiring high bandwidth per watt and robust thermal management.

FAQ

What is the maximum supported clock frequency for W948D6FBHX5I TR?

W948D6FBHX5I TR supports a maximum clock frequency of 166MHz with CAS Latency 3 (tCK = 6.0ns). This rating is validated under industrial temperature conditions (−40°C to +85°C) and VDD/VDDQ = 1.8V ±0.15V. Operation at 200MHz is not supported for this specific variant-only the W948D2FB family member is rated for that speed.

Does W948D6FBHX5I TR support Deep Power Down mode, and what is its typical current draw?

Yes, W948D6FBHX5I TR supports Deep Power Down (DPD) mode, which disables internal logic, I/O buffers, and clock circuitry. In DPD mode, typical current draw is less than 10µA at +25°C, enabling multi-week battery retention in always-on portable devices. Exit time from DPD is specified as tDPDX ≤ 100ns.

How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W948D6FBHX5I TR?

ATCSR in W948D6FBHX5I TR dynamically adjusts the self-refresh interval based on on-die temperature sensor readings. At high temperatures, refresh rate increases to prevent data loss; at low temperatures, it decreases to save power. This eliminates need for external thermal monitoring and ensures reliable retention across −40°C to +85°C without firmware intervention.

What package type and dimensions does W948D6FBHX5I TR use?

W948D6FBHX5I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6.4mm × 8.0mm × 0.6mm (body height). It complies with JEDEC MO-240 standard and features 0.5mm ball pitch, making it suitable for high-density mobile PCBs with tight routing constraints.

Can W948D6FBHX5I TR be used as a direct replacement for W948D2FB in existing designs?

No, W948D6FBHX5I TR is not a direct replacement for W948D2FB. While both share the same 256Mb density and x16 interface, W948D2FB is rated for 200MHz (CL=3), whereas W948D6FBHX5I TR is limited to 166MHz. Substituting them may cause timing violations in systems relying on the higher clock rate, even if pinout and voltage specs match.

W948D6FBHX5I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR
Memory Size:
256Mbit
Memory Organization:
16M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
5 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-VFBGA (8x9)

W948D6FBHX5I TR FAQ

1.How can I place an order for W948D6FBHX5I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W948D6FBHX5I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W948D6FBHX5I TR reliable?

The price and inventory of W948D6FBHX5I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6FBHX5I TR is usually 5 days.

3.What payment methods are accepted for W948D6FBHX5I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6FBHX5I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W948D6FBHX5I TR?

W948D6FBHX5I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W948D6FBHX5I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W948D6FBHX5I TR?

For technical support, including W948D6FBHX5I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6FBHX5I TR requirements.

6.How does Aetrix verify that W948D6FBHX5I TR is sourced from the original manufacturer or authorized distributors?

All W948D6FBHX5I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6FBHX5I TR meets industry standards.

7.What is the process for return or replacement of W948D6FBHX5I TR?

All W948D6FBHX5I TR units undergo pre-shipment inspection (PSI). If there is an issue with W948D6FBHX5I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W948D6FBHX5I TR part is unused and in its original packaging.

Return procedure for W948D6FBHX5I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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