Winbond Electronics Corporation W948D6FBHX5J

Overview

W948D6FBHX5J from Winbond is a 256Mb mobile LPDDR SDRAM in x16 configuration, operating at 166MHz (−6 speed grade), with VDD/VDDQ = 1.7–1.95V, CAS latency of 2 or 3, and four internal banks. It serves as main memory in space-constrained portable electronics requiring low standby power and burst-oriented data access.

For engineers reviewing the W948D6FBHX5J datasheet, W948D6FBHX5J pinout, W948D6FBHX5J application, or W948D6FBHX5J equivalent, key selection criteria include its LPDDR x16 VFBGA-60 package, PASR/ATCSR power management, programmable output drive strength, and support for sequential/interleaved burst types with auto precharge.

Technical Context

This LPDDR SDRAM implements a synchronous, double-data-rate interface with differential clock inputs (CK/CK̄) and bidirectional data strobes (UDQS/LDQS). Its four-bank architecture enables bank interleaving to hide row precharge latency, while mode registers configure burst length (2/4/8/16), burst type (sequential/interleave), and CAS latency (CL=2 or CL=3).

Power efficiency is achieved via multiple low-power states: Power Down Mode (CKE-driven), Deep Power Down (DPD), and Self Refresh with Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). Initialization requires two AUTO REFRESH commands and explicit MRS/EMRS programming before operation.

Key Specifications

Pinout & Package

W948D6FBHX5J uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for mobile LPDDR x16 interface. Pin assignments follow JEDEC-standard LPDDR ballout with dedicated VDD/VSS/VDDQ/VSSQ power and ground balls distributed for low-impedance supply routing and signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W948D6FBHX5J, MT46H32M16LFCK-6 IT:F delivers higher throughput but sacrifices dynamic power optimization, while IS42S16100F-6BLI trades thermal robustness and ultra-low-power capability for bill-of-materials savings.

Availability

W948D6FBHX5J is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet system memory, wearable OS platforms, and IoT edge gateway cache applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for W948D6FBHX5J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W948D6FBHX5J belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for battery-powered portable devices needing high bandwidth, low active/standby power, and JEDEC-compliant interface compatibility.

FAQ

What is the exact package type and ball count for W948D6FBHX5J?

W948D6FBHX5J uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 5.0mm × 8.0mm × 0.6mm, configured for LPDDR x16 interface. This matches the "W948D6FB" variant designation in Winbond's documentation and is distinct from the 90-ball x32 version (W948D2FB). The package complies with JEDEC MO-229 standards and supports automated SMT assembly.

Does W948D6FBHX5J support both CAS latency 2 and 3?

Yes, W948D6FBHX5J supports programmable CAS latency of CL=2 or CL=3 via Mode Register configuration. CL=2 provides lower read latency (12.0ns at 166MHz), while CL=3 offers greater timing margin for signal integrity in noisy layouts. Both settings are fully validated in the official datasheet and require no hardware changes-only MRS register programming during initialization.

How does Partial Array Self Refresh (PASR) function in W948D6FBHX5J?

In W948D6FBHX5J, PASR allows selective self-refresh of only active memory subarrays instead of the full 256Mb array. Controlled via Extended Mode Register bits, it reduces IDD6 current by up to 50% when only portions of memory are actively used-critical for extending battery life in smartphone background tasks like email sync or location tracking without sacrificing data retention.

What power-saving modes are implemented in W948D6FBHX5J?

W948D6FBHX5J implements three hierarchical power-saving modes: Power Down Mode (activated by CKE LOW, cuts dynamic power), Deep Power Down (DPD, ≤10µA standby current), and Self Refresh with ATCSR/PASR. DPD requires issuing DPDS command and is exited asynchronously via CKE pulse; ATCSR dynamically adjusts refresh rate based on die temperature to minimize unnecessary refresh cycles.

Is W948D6FBHX5J compatible with standard LPDDR memory controllers?

Yes, W948D6FBHX5J is fully compliant with JEDEC JESD209-2 (LPDDR2) specifications for electrical signaling, timing, command encoding, and initialization sequence. It interfaces directly with industry-standard LPDDR controllers found in MediaTek, Qualcomm, and NXP application processors-no adapter logic or firmware adaptation is required for drop-in integration.