Winbond Electronics Corporation W948D6FBHX6E

Overview

W948D6FBHX6E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate (–6 speed grade), 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and four internal banks-designed for low-power mobile applications including smartphones and portable tablets requiring burst-oriented memory access with deep power-down capability.

For engineers reviewing the W948D6FBHX6E datasheet, W948D6FBHX6E pinout, W948D6FBHX6E application, or W948D6FBHX6E equivalent, key selection considerations include its 60-ball VFBGA x16 package, PASR and ATCSR power-saving features, LVCMOS interface compliance, and support for sequential/interleave burst modes with programmable drive strength.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate architecture with differential CK/CK inputs, bidirectional DQS strobes, and four independently addressable banks to enable bank interleaving and hide precharge latency. It supports auto-precharge, clock stop, and burst lengths of 2/4/8/16 with configurable CAS latency (CL=2 or CL=3).

Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device uses A10/AP for auto-precharge control and BA0/BA1 for bank selection-enabling concurrent bank operations without external arbitration.

Key Specifications

Pinout & Package

W948D6FBHX6E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for mobile footprint and thermal performance. Pin assignment follows JEDEC-standard LPDDR x16 ballout with dedicated VDD/VSS/VDDQ/VSSQ power/ground distribution and signal grouping for signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H32M16LFCK-6 IT:F and IS42S16100F-6BLI, W948D6FBHX6E provides unique power optimization via PASR, ATCSR, and Deep Power Down-making it preferable for battery-constrained mobile designs where runtime and thermal envelope are critical constraints.

Availability

W948D6FBHX6E is available at Aetrix Electronics and suitable for smartphone application processor memory, portable tablet main memory, wearable device system memory, and IoT edge node buffer memory requiring stable component supply, long-term lifecycle support, and full JEDEC LPDDR compliance.

Supply support for W948D6FBHX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

W948D6FBHX6E belongs to Winbond's Mobile LPDDR SDRAM product line-engineered specifically for energy-efficient, high-bandwidth memory subsystems in space-constrained portable electronics with stringent thermal and battery-life requirements.

FAQ

What is the exact package type and ball count for W948D6FBHX6E?

W948D6FBHX6E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch, conforming to JEDEC MO-244AC standard. This x16 configuration places power, ground, address, command, and data signals in optimized groupings to minimize crosstalk and support high-speed DDR signaling.

Does W948D6FBHX6E support both CAS latency 2 and 3?

Yes, W948D6FBHX6E supports programmable CAS latency of CL=2 or CL=3 via Mode Register configuration. The selected latency directly determines the minimum tAA (access time from column address) and affects timing margins in high-frequency operation-CL=2 offers lower latency at the cost of tighter setup/hold windows.

How does Partial Array Self Refresh (PASR) function in W948D6FBHX6E?

In W948D6FBHX6E, PASR allows selective self-refresh of only specified memory subarrays (e.g., ¼, ½, or full array) via Extended Mode Register settings. This reduces refresh current proportionally-critical for extending battery life during partial-memory-idle states in mobile OS background tasks without compromising data retention.

What is the purpose of the A10/AP pin on W948D6FBHX6E?

On W948D6FBHX6E, the A10 pin serves dual function: as address bit A10 during normal operation and as Auto-Precharge Select (AP) during READ/WRITE commands. When asserted high, it triggers automatic precharge of the accessed bank after burst completion-eliminating need for explicit PRECHARGE commands in sequential access patterns.

Can W948D6FBHX6E operate with a single 1.8V supply rail?

Yes, W948D6FBHX6E supports single-rail operation with VDD = VDDQ = 1.8V (within 1.7–1.95V range). Its isolated VDDQ/VSSQ rails are internally decoupled, allowing use of one regulated 1.8V source for both core and I/O-simplifying power delivery design while maintaining signal integrity through dedicated I/O ground return paths.