Winbond Electronics Corporation W948D6FBHX6E TR

Overview

W948D6FBHX6E TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate (–6 speed grade), 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and four internal banks - designed for low-power mobile applications requiring burst-oriented memory access with PASR and ATCSR power management.

For engineers reviewing the W948D6FBHX6E TR datasheet, W948D6FBHX6E TR pinout, W948D6FBHX6E TR application, or W948D6FBHX6E TR equivalent, this device supports LPDDR x16 interface timing, deep power-down mode, programmable output drive strength, and differential clock inputs - critical for battery-constrained handheld and embedded systems.

Technical Context

The W948D6FBHX6E TR implements a synchronous burst-access architecture with four independently operated banks, enabling bank interleaving to hide precharge latency. It uses differential CK/CK inputs for clocking and bidirectional DQS strobes aligned with read/write data edges.

Initialization requires strict sequencing: stable VDD/VDDQ ramp with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming - all before first valid command. Clock stop and deep power-down modes are only enabled post-initialization.

Key Specifications

Pinout & Package

W948D6FBHX6E TR is housed in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for mobile PCB layouts. Pin assignment follows JEDEC-standard LPDDR x16 ballout with dedicated VDD/VSS/VDDQ/VSSQ rails, dual DQS strobes (LDQS/UDQS), and differential clock inputs (CK/CK).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar mobile LPDDR SDRAM applications.

Compared with MT46H32M16LFCK-6 IT and IS42S16160F-6BLI, W948D6FBHX6E TR delivers superior energy efficiency through integrated PASR, ATCSR, and DPD - making it the only option among the three qualified for battery-limited mobile SoC designs requiring JEDEC LPDDR-1 compliance.

Availability

W948D6FBHX6E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, and IoT edge node sensor cache applications requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for W948D6FBHX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, PSRAM, and low-power DRAM products for mobile and embedded markets.

W948D6FBHX6E TR belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for JEDEC-compliant, battery-sensitive portable devices demanding high bandwidth per pin and aggressive power-state transitions.

FAQ

What is the exact package type and dimensions of W948D6FBHX6E TR?

W948D6FBHX6E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 5.0mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This matches JEDEC MO-244AC standard for LPDDR x16 devices and is distinct from the 90-ball VFBGA used for x32 variants like W948D2FB. The package supports reflow soldering per IPC/JEDEC J-STD-020D.

Does W948D6FBHX6E TR support CAS latency 2, and under what conditions?

Yes, W948D6FBHX6E TR supports programmable CAS latency of 2 or 3, selectable via bits A4–A6 in the Mode Register. CL=2 is valid only at the –6 speed grade (166MHz) and within the specified 1.7–1.95V VDD/VDDQ range. The device must be initialized fully before CL configuration, and tAA (access time from clock) is 12.0ns minimum at CL=2.

How does Partial Array Self Refresh (PASR) function in W948D6FBHX6E TR?

In W948D6FBHX6E TR, PASR allows selective refresh of only designated memory sub-arrays (e.g., ¼, ½, or ¾ of total array) via Extended Mode Register settings. This reduces self-refresh current proportionally - e.g., refreshing ¼ array cuts IDD6 from 35μA to ~9μA - while preserving data in inactive regions. PASR is independent of ATCSR and can be combined with Deep Power Down.

What is the initialization sequence requirement for W948D6FBHX6E TR?

W948D6FBHX6E TR requires an 11-step initialization: (1) ramp VDD/VDDQ with CKE high, (2) apply stable clock, (3) wait ≥200μs with NOP/DESELECT, (4) PRECHARGE ALL, (5) wait tRP, (6) issue two AUTO REFRESH commands with tRFC gaps, (7) program Mode Register, (8) wait tMRD, (9) program Extended Mode Register, (10) wait tMRD, (11) device ready. Skipping any step risks undefined behavior.

Is W948D6FBHX6E TR compatible with standard LPDDR controllers?

Yes, W948D6FBHX6E TR complies fully with JEDEC JESD209-1 for LPDDR SDRAM and is interoperable with industry-standard LPDDR controllers (e.g., ARM CoreLink MMU-500, Synopsys DesignWare DDR PHY). It supports all mandatory commands (ACTIVE, READ, WRITE, PRECHARGE, MRS, EMRS, SRR), timing parameters, and electrical specifications defined in the standard - no controller firmware modification required.