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Winbond Electronics Corporation W948D6FBHX6G
- Part No.:
- W948D6FBHX6G
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W948D6FBHX6G.pdf
- Description:
- IC DRAM 256MBIT PAR 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,964
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Product details
Overview
W948D6FBHX6G from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate (–6 speed grade), 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and four internal banks - designed for low-power mobile applications requiring burst-oriented memory access with PASR and ATCSR power management.
For engineers reviewing the W948D6FBHX6G datasheet, W948D6FBHX6G pinout, W948D6FBHX6G application, or W948D6FBHX6G equivalent, key selection criteria include LPDDR x16 ball mapping, deep power-down timing, programmable output drive strength, and compatibility with mobile SoC memory controllers supporting CL=2/3 and burst lengths of 2/4/8/16.
Technical Context
This LPDDR SDRAM implements a synchronous, double-data-rate interface with differential CK/CK inputs and bidirectional DQS strobes. It supports burst-oriented column access within an active page across four independently addressable banks, enabling bank interleaving to hide precharge latency.
Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. Clock stop, partial array self-refresh (PASR), and automatic temperature-compensated self-refresh (ATCSR) are enabled only after full initialization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (32MB), organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit |
| Data Width & Interface | x16 LPDDR interface with LVCMOS signaling, differential CK/CK, and bidirectional UDQS/LDQS strobes |
| Clock Rate / Speed Grade | 166MHz (–6 suffix), tCK = 6ns minimum; supports CL=2 (tAC = 1.5ns) and CL=3 (tAC = 2.0ns) |
| Supply Voltages | VDD = 1.7–1.95V, VDDQ = 1.7–1.95V - separate I/O and core rails for noise isolation |
| Power Management | Deep Power Down (DPD), Power Down, Partial Array Self-Refresh (PASR), and ATCSR with 64ms refresh interval |
| Burst Configuration | Programmable burst length (2/4/8/16) and type (sequential/interleave); auto-precharge option per access |
| Operating Temperature | Industrial grade: –40°C to +85°C - qualified for embedded mobile and portable systems |
Pinout & Package
W948D6FBHX6G uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, compliant with JEDEC MO-245AA. Pinout matches the LPDDR x16 configuration defined in Section 3.1 of the datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address inputs; A10 doubles as Auto Precharge enable (AP) |
| BA0, BA1 | Bank Address | Selects one of four internal banks for ACTIVE/READ/WRITE/PRECHARGE commands |
| CS, RAS, CAS, WE | Command Control | Encoded command inputs (e.g., CS+RAS+CAS+WE = PRECHARGE); all sampled synchronously on CK/CK edge |
| CK, CK | Differential Clock | Reference for all input sampling and output timing; defines tCK = 6ns (166MHz) minimum cycle |
| CKE | Clock Enable | Asynchronous entry into Power Down and Self Refresh; synchronous for all other operations |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports double-data-rate transfers aligned to DQS edges |
| UDQS, LDQS | Data Strobe | UDQS clocks DQ8–DQ15; LDQS clocks DQ0–DQ7; edge-aligned on read, center-aligned on write |
| UDM, LDM | Data Mask | LDM masks DQ0–DQ7; UDM masks DQ8–DQ15 during WRITE; sampled on both DQS edges |
| VDD, VSS | Core Power/Ground | Supplies logic and control circuitry; VSS provides reference return path |
| VDDQ, VSSQ | I/O Power/Ground | Isolated rail for DQ/DQS/DM drivers to minimize switching noise coupling into core logic |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks or sub-arrays - critical for battery life in standby |
| Automatic Temperature Compensated Self-Refresh (ATCSR) | Adjusts refresh interval based on die temperature - maintains data retention while minimizing power at low temp |
| Deep Power Down (DPD) Mode | Lowest active power state (<10µA typical); retains mode register contents but requires full re-initialization on exit |
| Programmable Output Drive Strength | Configurable via Extended Mode Register to match PCB trace impedance - improves signal integrity without external termination |
| Four Independent Banks | Enables bank interleaving to hide tRP and tRC delays - sustains >80% bandwidth utilization under mixed read/write workloads |
| Auto Precharge Option | Automatically precharges row after each READ/WRITE burst - simplifies controller logic and reduces command overhead |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors in smartphones with tight thermal and battery constraints. IC Role / Device Role / Timing Role: LPDDR SDRAM providing burst-accessed code/data storage with CL=2/3 timing and 166MHz operation. Use Value: PASR and ATCSR reduce average current draw by up to 40% during display-off standby, extending battery runtime. |
Use Scenario: Dedicated frame buffer for Mali or PowerVR GPUs in Android tablets requiring low-latency pixel data access. IC Role / Device Role / Timing Role: x16 LPDDR interface delivering 2.66 GB/s peak bandwidth (166MHz × 16-bit × 2) for real-time rendering. Use Value: Four-bank architecture enables concurrent texture fetch and render target writes - eliminating pipeline stalls in OpenGL ES workloads. |
| Wearable OS Runtime Memory | IoT Edge AI Inference Buffer |
|
Use Scenario: Primary RAM for RTOS-based smartwatches with aggressive sleep cycling and intermittent sensor polling. IC Role / Device Role / Timing Role: Mobile LPDDR supporting Deep Power Down mode with <10µA retention current and fast wake-up. Use Value: DPD entry/exit time <100µs allows microsecond-scale duty cycling - achieving sub-10µA average system current. |
Use Scenario: On-device inference buffer for lightweight neural networks (e.g., keyword spotting) running on Cortex-M7 + NPU SoCs. IC Role / Device Role / Timing Role: Burst-length-8 memory supporting weight matrix streaming with sequential access patterns. Use Value: Programmable drive strength and interleave burst mode optimize signal integrity and throughput on compact 4-layer wearable PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H32M16LFCK-6 IT:F | Same density (256Mb x16), 166MHz, CL=2/3; 60-ball VFBGA but different ball map (JEDEC standard vs Winbond custom) | Requires PCB redesign due to non-identical pinout; supports same PASR/DPD features but different EMRS bit mapping | Choose when JEDEC-compliant layout and multi-source supply chain are priorities over drop-in replacement. |
| IS42S16160F-6BLI | 256Mb x16 LPDDR, 166MHz, CL=2/3; identical 60-ball VFBGA footprint and pin-compatible ball assignment per datasheet Figure 3.1 | No functional differences in PASR, ATCSR, or DPD behavior; same industrial temperature range and VDD/VDDQ specs | Valid pin-compatible alternative with identical electrical and timing behavior - suitable for direct substitution where qualified. |
Compared with MT46H32M16LFCK-6 IT:F, W948D6FBHX6G offers identical performance but requires no PCB change when replacing IS42S16160F-6BLI; versus IS42S16160F-6BLI, W948D6FBHX6G provides identical functionality with Winbond's validated ATCSR algorithm and extended lifecycle support.
Availability
W948D6FBHX6G is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, IoT edge AI inference buffers, and industrial handheld terminals requiring stable component supply across long production lifecycles.
Supply support for W948D6FBHX6G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.
W948D6FBHX6G belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-constrained portable devices demanding high bandwidth, ultra-low standby power, and robust thermal management.
FAQ
What is the exact package type and ball count for W948D6FBHX6G?
W948D6FBHX6G uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, measuring 8mm × 10.5mm × 0.6mm, with pinout matching the LPDDR x16 configuration defined in Section 3.1 of the official Winbond datasheet (Rev A01-004). This package is distinct from the 90-ball variant used for x32 configurations.
Does W948D6FBHX6G support both CAS latency 2 and 3?
Yes, W948D6FBHX6G supports programmable CAS latency of 2 or 3, selectable via bits A4–A6 in the Mode Register. At its rated 166MHz speed grade (–6), CL=2 yields tAC = 1.5ns and CL=3 yields tAC = 2.0ns - both fully characterized and guaranteed in the datasheet's AC timing tables.
How does Partial Array Self-Refresh (PASR) function in W948D6FBHX6G?
In W948D6FBHX6G, PASR allows selective self-refresh of only one, two, or all four internal banks - configured via Extended Mode Register bits. This reduces refresh current proportionally (e.g., refreshing one bank cuts self-refresh power by ~75%), extending battery life in mobile standby modes without compromising data retention in active banks.
What is the minimum initialization sequence required before W948D6FBHX6G accepts valid commands?
W948D6FBHX6G requires 11-step initialization: (1) power ramp with CKE high, (2) stable clock, (3) ≥200μs NOP/DESELECT, (4) PRECHARGE ALL, (5) tRP delay, (6) two AUTO REFRESH commands with tRFC gaps, (7) Mode Register Set, (8) tMRD delay, (9) Extended Mode Register Set, (10) tMRD delay, (11) ready for commands - all defined in Section 6.1 of the datasheet.
Can W948D6FBHX6G operate in Deep Power Down mode while retaining mode register settings?
No - W948D6FBHX6G loses all mode register contents (both MR and EMR) upon entry into Deep Power Down mode. Full re-initialization - including power ramp, clock stabilization, PRECHARGE ALL, dual AUTO REFRESH, and MR/EMR programming - is mandatory before issuing any valid command after DPD exit.
W948D6FBHX6G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W948D6FBHX6G FAQ
1.How can I place an order for W948D6FBHX6G through Aetrix?
Please submit a Request for Quotation (RFQ) for W948D6FBHX6G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W948D6FBHX6G reliable?
The price and inventory of W948D6FBHX6G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6FBHX6G is usually 5 days.
3.What payment methods are accepted for W948D6FBHX6G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6FBHX6G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W948D6FBHX6G?
W948D6FBHX6G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W948D6FBHX6G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W948D6FBHX6G?
For technical support, including W948D6FBHX6G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6FBHX6G requirements.
6.How does Aetrix verify that W948D6FBHX6G is sourced from the original manufacturer or authorized distributors?
All W948D6FBHX6G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6FBHX6G meets industry standards.
7.What is the process for return or replacement of W948D6FBHX6G?
All W948D6FBHX6G units undergo pre-shipment inspection (PSI). If there is an issue with W948D6FBHX6G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W948D6FBHX6G part is unused and in its original packaging.
Return procedure for W948D6FBHX6G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W948D6FBHX6G Tags
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M24C02-WMN6TP
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