Winbond Electronics Corporation W948D6FBHX6I

Overview

W948D6FBHX6I from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate (–6 speed grade), 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and four internal banks - used as main memory in space-constrained portable devices such as smartphones and ultra-thin tablets.

For engineers reviewing the W948D6FBHX6I datasheet, W948D6FBHX6I pinout, W948D6FBHX6I application, or W948D6FBHX6I equivalent, key selection criteria include LPDDR interface compliance, burst length programmability (2/4/8/16), partial array self-refresh (PASR), deep power-down mode, and VFBGA-60 package compatibility with mobile SoC memory controllers.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate architecture with differential CK/CK inputs, bidirectional DQS strobes, and programmable mode registers for burst type (sequential/interleave), CAS latency, and auto-precharge control. It supports bank-interleaved access to hide precharge latency across its four independent banks.

Initialization requires strict sequencing: stable power + CKE high → ≥200μs clock stabilization → PRECHARGE ALL → two AUTO REFRESH commands → Mode Register Set → Extended Mode Register Set. Clock stop and deep power-down modes are only enabled after full initialization.

Key Specifications

Pinout & Package

W948D6FBHX6I is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch, optimized for compact mobile PCB layouts. Pin assignment follows LPDDR x16 standard per JEDEC JESD209.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H32M16LFCK-6 IT and IS42S16160F-6BLI, W948D6FBHX6I delivers superior power efficiency in thermally variable environments due to integrated ATCSR and deeper DPD current reduction, making it optimal for next-gen portable designs where battery life and thermal headroom are critical.

Availability

W948D6FBHX6I is available at Aetrix Electronics and suitable for smartphone main memory, tablet GPU frame buffers, wearable OS runtime, and IoT edge AI inference buffer applications requiring stable component supply across multi-year production cycles.

Supply support for W948D6FBHX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

W948D6FBHX6I belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-operated portable devices demanding high bandwidth, ultra-low standby power, and industrial-grade reliability in compact form factors.

FAQ

What is the exact package type and ball count for W948D6FBHX6I?

W948D6FBHX6I uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch, conforming to LPDDR x16 interface standards. This package is documented in Section 3.1 of the official datasheet and verified on Winbond's product page and distributor landing pages (e.g., Digi-Key part #698-1222-1-ND). The ball map includes dedicated DQ, DQS, DM, address, and control signals arranged for optimal signal integrity in mobile PCB stackups.

Does W948D6FBHX6I support CAS latency of 2 and 3, and how is it configured?

Yes, W948D6FBHX6I supports both CAS latency (CL) values of 2 and 3, selected via bits A4–A6 in the Mode Register during initialization. As specified in Section 6.2.2 of the datasheet, CL=2 corresponds to A4=0/A5=0/A6=0, and CL=3 to A4=1/A5=0/A6=0. The setting persists until reprogrammed or device enters Deep Power Down mode. CL choice directly impacts read command-to-data-valid timing (tRL) - 2 cycles at 166MHz yields ~12ns, 3 cycles yields ~18ns.

How does Partial Array Self-Refresh (PASR) function in W948D6FBHX6I?

PASR in W948D6FBHX6I allows selective refresh of only active memory subarrays instead of the entire 256Mb array, reducing self-refresh current by up to 40%. It is enabled via Extended Mode Register (EMR) bits, with configuration options for ¼, ½, or full-array refresh. This feature is confirmed in Section 2 (Features) and Section 6.8 of the datasheet and is particularly valuable in smartphone display-off states where only OS kernel and sensor buffers remain active.

What are the key differences between W948D6FBHX6I and the W948D2FB variant?

W948D6FBHX6I and W948D2FB share the same 256Mb LPDDR architecture and x16 interface but differ in speed grade and temperature rating: W948D6FBHX6I is rated for 166MHz (–6) and Industrial temperature (–40°C to +85°C), while W948D2FB is rated for 200MHz (–5) and Extended temperature (–25°C to +85°C). Both use the same 60-ball VFBGA package, but their timing parameters (e.g., tRC, tRP) and voltage tolerances are calibrated per speed/temp grade per Section 8.5 of the datasheet.

Is W948D6FBHX6I compatible with standard LPDDR1 controllers?

Yes, W948D6FBHX6I is fully compliant with JEDEC JESD209 LPDDR1 specification, supporting all mandatory commands (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, MODE REGISTER SET), timing parameters, and electrical signaling (LVCMOS, differential CK/CK, bidirectional DQS). Its pinout, command encoding, and initialization sequence match LPDDR1 requirements, enabling drop-in replacement in validated LPDDR1 designs without hardware modification.