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Winbond Electronics Corporation W948D6KBHX5E
- Part No.:
- W948D6KBHX5E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W948D6KBHX5E.pdf
- Description:
- IC DRAM 256MBIT PAR 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,146
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Product details
Overview
W948D6KBHX5E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 200MHz clock rate (CL=2/3), 4-bank architecture, and 60-ball VFBGA package. It delivers burst lengths of 2/4/8/16 in sequential or interleave mode and supports PASR and ATCSR for adaptive power management in battery-constrained portable devices.
For engineers reviewing the W948D6KBHX5E datasheet, W948D6KBHX5E pinout, W948D6KBHX5E application, or W948D6KBHX5E equivalent, this page provides verified electrical specs, ball mapping, low-power operation modes (Deep Power Down, Clock Stop), and validated alternatives for mobile SoC memory subsystem design.
Technical Context
The W948D6KBHX5E implements a 4-bank synchronous DRAM core with differential CK/CK inputs, bidirectional UDQS/LDQS strobes, and programmable output drive strength. Its command decoder interprets CS, RAS, CAS, WE, and CKE to execute ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, and SELF REFRESH operations.
Initialization requires strict sequencing: 200μs stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH cycles, then Mode Register and Extended Mode Register configuration. The device supports auto-precharge, data mask (UDM/LDM), and burst termination-enabling efficient memory access in bandwidth-sensitive mobile applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (32MB) organized as 4 banks × 8K rows × 512 columns × x16 |
| Data Width | x16 interface with DQ0–DQ15 and matched UDQS/LDQS strobes for timing-critical write capture |
| Clock Rate | 200MHz (–5 speed grade), enabling 400MT/s data transfer rate with double-data-rate I/O |
| CAS Latency | Programmable CL=2 or CL=3; determines minimum clock cycles between READ command and first valid data |
| Burst Length | Configurable 2/4/8/16; defines number of consecutive column accesses per READ/WRITE command |
| Power Supplies | VDD = VDDQ = 1.8V ±0.15V; separate VDDQ/VSSQ rails reduce I/O noise coupling into core logic |
| Refresh Requirement | 8K refresh cycles per 64ms; supports Partial Array Self Refresh (PASR) to reduce active bank count during idle |
Pinout & Package
60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6.0mm × 8.0mm × 0.6mm, 0.5mm ball pitch, JEDEC MO-247 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 doubles as Auto Precharge enable (AP) |
| BA0, BA1 | Bank Address | Selects one of four internal banks for concurrent ACTIVE/READ/WRITE operations |
| CS, RAS, CAS, WE | Command Control | Encoded command inputs; CS enables command decoder, others define operation type |
| CK / CK | Differential Clock | Edge-aligned sampling of all control/address inputs; reference for DQ/DQS timing |
| CKE | Clock Enable | Synchronous entry/exit from Power Down, Self Refresh, and Deep Power Down modes |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports DM masking via UDM (DQ8–DQ15) and LDM (DQ0–DQ7) |
| UDQS / LDQS | Data Strobe | Source-synchronous strobe: edge-aligned on read, center-aligned on write for precise capture |
| VDD, VDDQ, VSS, VSSQ | Power/Ground | Separate core (VDD/VSS) and I/O (VDDQ/VSSQ) supplies minimize noise coupling and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks-critical for extended standby in handheld devices |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh interval based on die temperature, maintaining data retention while minimizing power at elevated junction temps |
| Deep Power Down (DPD) Mode | Lowest active power state (≤10μA); retains memory contents but requires full reinitialization on wake-up |
| Programmable Output Drive Strength | Configurable via Extended Mode Register to match PCB trace impedance and reduce EMI in high-speed layouts |
| Auto Precharge Option | Enables automatic bank precharge after each burst, simplifying controller logic and reducing latency in random-access patterns |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors in sub-6-inch smartphones with LTE connectivity and HD display. IC Role / Device Role / Timing Role: LPDDR SDRAM providing 400MT/s bandwidth to feed CPU/GPU instruction and data streams under strict thermal and battery-life constraints. Use Value: PASR and ATCSR cut standby current by >40% vs. standard self-refresh; DPD mode extends idle battery life to multi-day durations. | Use Scenario: Dedicated graphics memory for Mali-T860 MP4 GPU in 7–10 inch Android tablets running OpenGL ES 3.1 applications. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer supporting 120Hz UI rendering and video decode acceleration. Use Value: 200MHz clock + CL=2 enables sub-10ns read latency; 4-bank interleaving hides precharge delays during burst-heavy texture fetches. |
| Wearable OS Runtime Memory | IoT Edge AI Inference Buffer |
Use Scenario: Primary RAM for real-time OS execution in compact smartwatches with always-on sensors and Bluetooth LE connectivity. IC Role / Device Role / Timing Role: Low-voltage (1.8V), low-power SDRAM managing firmware code, sensor buffers, and BLE packet queues with minimal footprint. Use Value: 60-ball VFBGA fits <8mm² PCB area; Clock Stop capability eliminates dynamic power during sensor polling intervals. | Use Scenario: On-device inference buffer for microcontroller-based neural network accelerators processing audio or image sensor data in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Temporary storage for model weights and activation tensors during quantized INT8 inference kernels. Use Value: Burst lengths up to 16 optimize DMA transfers from flash; programmable drive strength ensures signal integrity on 4-layer cost-optimized PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H256M16LFQ-5IT | Same density (256Mb), x16, 200MHz, but uses 60-ball VFBGA with different ball map and CL=2.5/3 only; no PASR support | Lacks partial array self-refresh-requires full-bank refresh during standby, increasing average current by ~25% | Choose when legacy controller compatibility with Micron's register definitions is required; verify ball-out routing and initialization sequence differences |
| K4E6E304EC-EGCJ | 256Mb, x16, 200MHz, 60-ball VFBGA; supports PASR and ATCSR but specifies -30°C to 85°C industrial temp range | Broader operating temperature range suits automotive infotainment modules where ambient exceeds 85°C case temperature | Prefer for extended-temperature designs; confirm compatibility of EMRS bit definitions for PASR configuration |
Compared with W948D6KBHX5E, MT46H256M16LFQ-5IT offers identical speed and density but lacks adaptive power features, while K4E6E304EC-EGCJ matches all key low-power functions and extends thermal tolerance-making it suitable for harsher environments without sacrificing battery efficiency.
Availability
W948D6KBHX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, and IoT edge AI inference buffers requiring stable component supply across high-volume production ramps.
Supply support for W948D6KBHX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, SLCD RAM, and mobile DRAM products for consumer and industrial markets.
The W948D6KBHX5E belongs to Winbond's LPDDR family designed specifically for ultra-low-power, high-bandwidth memory subsystems in space-constrained portable electronics-emphasizing adaptive refresh, voltage scalability, and compact packaging.
FAQ
What is the operating temperature range specified for the W948D6KBHX5E?
The W948D6KBHX5E is rated for extended temperature operation from –25°C to +85°C case temperature (TCASE). This range supports mainstream consumer portable devices such as smartphones and tablets where ambient thermal conditions remain within typical indoor/outdoor usage profiles without active cooling.
Does the W948D6KBHX5E support both sequential and interleave burst types?
Yes, the W948D6KBHX5E supports both sequential and interleave burst ordering, selectable via bit A3 in the Mode Register. Sequential mode accesses column addresses in linear order (e.g., 0→1→2→3), while interleave mode rearranges access order (e.g., 0→1→2→3 becomes 0→1→3→2) to improve cache line efficiency in certain memory controller architectures.
How does the Partial Array Self Refresh (PASR) function reduce power in the W948D6KBHX5E?
PASR in the W948D6KBHX5E allows the memory controller to specify which of the four internal banks remain active during self-refresh, while inactive banks enter a deeper retention state. This reduces refresh current proportionally-for example, refreshing only one bank cuts self-refresh power by ~75% compared to full-array refresh-extending battery life in always-on mobile applications.
What is the significance of the "5E" suffix in the W948D6KBHX5E part number?
The "5E" suffix in W948D6KBHX5E denotes the speed grade (200MHz, –5) and temperature grade (Extended: –25°C to +85°C). It also confirms the 60-ball VFBGA package and 1.8V VDD/VDDQ supply-distinguishing it from the –6 (166MHz) and –I (Industrial –40°C to +85°C) variants in the same W948D6KBHX family.
Can the W948D6KBHX5E be used with controllers designed for standard DDR2 or DDR3 SDRAM?
No, the W948D6KBHX5E is not compatible with DDR2 or DDR3 controllers. It implements the JEDEC LPDDR (Low Power DDR) standard with distinct signaling (differential CK/CK, bidirectional DQS, UDM/LDM), command encoding, initialization sequence, and power management features. Controllers must explicitly support LPDDR1 protocol and timing requirements to interface with W948D6KBHX5E.
W948D6KBHX5E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W948D6KBHX5E FAQ
1.How can I place an order for W948D6KBHX5E through Aetrix?
Please submit a Request for Quotation (RFQ) for W948D6KBHX5E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W948D6KBHX5E reliable?
The price and inventory of W948D6KBHX5E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6KBHX5E is usually 5 days.
3.What payment methods are accepted for W948D6KBHX5E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6KBHX5E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W948D6KBHX5E?
W948D6KBHX5E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W948D6KBHX5E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W948D6KBHX5E?
For technical support, including W948D6KBHX5E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6KBHX5E requirements.
6.How does Aetrix verify that W948D6KBHX5E is sourced from the original manufacturer or authorized distributors?
All W948D6KBHX5E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6KBHX5E meets industry standards.
7.What is the process for return or replacement of W948D6KBHX5E?
All W948D6KBHX5E units undergo pre-shipment inspection (PSI). If there is an issue with W948D6KBHX5E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W948D6KBHX5E part is unused and in its original packaging.
Return procedure for W948D6KBHX5E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W948D6KBHX5E Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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