Winbond Electronics Corporation W948D6KBHX5E TR

Overview

W948D6KBHX5E TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 200MHz clock rate (CL=2/3), 1.8V VDD/VDDQ supply, and 60-ball VFBGA package. It implements four internal banks, burst lengths of 2/4/8/16, sequential or interleaved burst types, and supports PASR and ATCSR for adaptive power management in portable systems.

For engineers reviewing the W948D6KBHX5E TR datasheet, W948D6KBHX5E TR pinout, W948D6KBHX5E TR application, or W948D6KBHX5E TR equivalent, this page delivers verified electrical specs, ball mapping, low-power mode behavior, timing constraints for read/write/precharge sequences, and validated alternative parts for mobile memory design.

Technical Context

This LPDDR SDRAM uses differential CK/CK inputs to latch commands and data, with bidirectional UDQS/LDQS strobes edge-aligned on reads and center-aligned on writes. All address/control signals are sampled on the crossing of CK and CK edges, ensuring precise timing alignment across voltage and temperature variations.

It supports programmable output drive strength, auto-precharge per burst, clock stop during idle, and deep power-down mode with retention loss recovery. The device requires two auto-refresh commands during initialization and retains mode register settings until deep power-down or power loss.

Key Specifications

Pinout & Package

60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 6.4mm × 8.0mm × 0.6mm body, 0.5mm ball pitch, JEDEC MO-247 compliant. Thermal pad exposed on bottom for enhanced heat dissipation in compact mobile PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W948D6KBHX5E TR, MT46H256M16LFQ-5IT offers lower voltage but lacks adaptive refresh and deep sleep modes, while W948D6KBHX6E TR provides identical functionality at reduced speed-enabling direct layout reuse with simplified timing closure.

Availability

W948D6KBHX5E TR is available at Aetrix Electronics and suitable for smartphone main memory, tablet system memory, wearable display buffers, and IoT edge gateway cache applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for W948D6KBHX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash storage, and security ICs, with over 30 years of DRAM design heritage.

The W948D6KBHX product line delivers mobile-optimized LPDDR SDRAM targeting power-constrained portable devices, emphasizing low-voltage operation, adaptive refresh, and compact packaging for space-limited PCBs.

FAQ

What is the maximum data rate supported by W948D6KBHX5E TR?

W948D6KBHX5E TR supports a maximum clock frequency of 200MHz, delivering an effective data rate of 400MT/s due to its double-data-rate architecture. This is confirmed in the Order Information table and AC Characteristics section of the datasheet, where tCK(min) = 5.0ns corresponds to 200MHz operation under 1.8V and extended temperature conditions.

Does W948D6KBHX5E TR support true deep power-down with data retention?

W948D6KBHX5E TR supports Deep Power Down (DPD) mode, but it does not retain data during DPD. The datasheet specifies that DPD results in "full register and array retention loss," requiring full reinitialization-including two AUTO REFRESH commands-upon exit. Data retention is only guaranteed in Self Refresh and Partial Array Self Refresh modes.

How many banks does W948D6KBHX5E TR have, and how are they selected?

W948D6KBHX5E TR contains four internal banks, selected using the BA0 and BA1 input pins. As stated in Section 5.1 and the Addressing Table, BA0/BA1 define the target bank for ACTIVE, READ, WRITE, and PRECHARGE commands, enabling bank-level interleaving to hide precharge latency and improve throughput.

What is the function of A10/AP on W948D6KBHX5E TR?

On W948D6KBHX5E TR, the A10 pin serves dual function: as address bit A10 during normal addressing, and as Auto Precharge Select (AP) when asserted HIGH during READ or WRITE commands. When AP=HIGH, the memory automatically issues a PRECHARGE command to the accessed bank at burst completion, eliminating need for explicit PRECHARGE sequencing.

Is W948D6KBHX5E TR pin-compatible with W948D6KBHX6E TR?

Yes, W948D6KBHX5E TR and W948D6KBHX6E TR share identical 60-ball VFBGA package, pinout, and signal definitions. The only difference is maximum clock rating: 200MHz for W948D6KBHX5E TR versus 166MHz for W948D6KBHX6E TR. Both parts use the same VDD/VDDQ=1.8V and operate across –25°C to 85°C case temperature range.