Winbond Electronics Corporation W948D6KBHX5I

Overview

W948D6KBHX5I from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 200MHz clock rate, 1.8V VDD/VDDQ supply, and industrial temperature range (–40°C to +85°C). It implements four internal banks, burst lengths of 2/4/8/16, CAS latency 2 or 3, and low-power features including Deep Power Down, Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR) for battery-constrained mobile applications.

For engineers reviewing the W948D6KBHX5I datasheet, W948D6KBHX5I pinout, W948D6KBHX5I application, or W948D6KBHX5I equivalent, key selection criteria include its 60-ball VFBGA package, differential CK/CK clock interface, bidirectional DQS strobes, programmable output drive strength, and support for auto precharge, clock stop, and LVCMOS-compatible signaling in space- and power-sensitive embedded systems.

Technical Context

This LPDDR SDRAM uses a synchronous double-data-rate architecture with differential clock inputs (CK/CK) and edge-aligned DQS for read capture and center-aligned DQS for write capture. Its command decoder interprets CS, RAS, CAS, and WE in conjunction with BA0/BA1 bank select and A[12:0] address lines to execute ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, and SELF REFRESH operations.

The device integrates a 4-bank memory array with independent row/column decoders, a refresh counter, mode register (MRS) and extended mode register (EMRS) for configuration, and power management logic supporting Power Down, Deep Power Down, and PASR/ATCSR modes. Initialization requires two AUTO REFRESH commands, MRS and EMRS programming, and strict timing windows (tRP, tRFC, tMRD).

Key Specifications

Pinout & Package

W948D6KBHX5I is housed in a 60-ball VFBGA package with 0.5mm ball pitch. Power and ground are distributed across multiple VDD, VDDQ, VSS, and VSSQ balls to minimize noise and ensure stable operation under dynamic load.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H64M16LFCK-6 IT and IS42S16160F-6BLI, W948D6KBHX5I delivers superior power efficiency through PASR, ATCSR, and Deep Power Down - critical for battery-operated devices - while maintaining pin-compatible 60-ball VFBGA packaging and industrial temperature support.

Availability

W948D6KBHX5I is available at Aetrix Electronics and suitable for smartphone main memory, tablet system memory, industrial HMI displays, and automotive infotainment modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W948D6KBHX5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, RAM, and trusted computing ICs, with global manufacturing and quality certifications.

W948D6KBHX5I belongs to Winbond's LPDDR SDRAM product line, designed specifically for mobile and embedded applications demanding high bandwidth, low voltage operation, and advanced power management in compact form factors.

FAQ

What is the maximum data transfer rate supported by W948D6KBHX5I?

W948D6KBHX5I supports a 200MHz clock rate with double-data-rate operation, delivering a peak data transfer rate of 400MT/s (megatransfers per second) on its x16 bus. This equates to 3.2GB/s theoretical bandwidth. The actual sustained rate depends on burst length, CAS latency, and memory controller efficiency, but the device is fully compliant with JEDEC LPDDR standards for 200MHz operation.

Does W948D6KBHX5I support both sequential and interleaved burst types?

Yes, W948D6KBHX5I supports both sequential and interleaved burst types, selectable via bit A3 in the Mode Register. Sequential bursts increment column addresses linearly (e.g., 0→1→2→3), while interleaved bursts follow a scrambled order optimized for cache-line access patterns. This flexibility allows system designers to align memory behavior with processor cache architectures for improved performance.

How does Partial Array Self Refresh (PASR) function in W948D6KBHX5I?

In W948D6KBHX5I, PASR allows the memory controller to configure which banks or sub-arrays remain active during self-refresh via the Extended Mode Register. By refreshing only the portions of memory containing live data, PASR reduces self-refresh current consumption by up to 50% compared to full-array refresh - a critical advantage for battery-powered devices where standby power dominates total energy budget.

What is the purpose of the UDQS and LDQS signals in W948D6KBHX5I?

W948D6KBHX5I uses two differential data strobes: UDQS for the upper byte (DQ8–DQ15) and LDQS for the lower byte (DQ0–DQ7). During reads, both strobes are edge-aligned with their respective data; during writes, they are center-aligned to capture data accurately. This dual-strobe architecture improves timing margin and signal integrity across the x16 bus, especially in high-speed, noise-sensitive mobile PCB layouts.

Can W948D6KBHX5I operate with a single 1.8V supply, or are separate VDD and VDDQ rails required?

W948D6KBHX5I requires two independent 1.8V supplies: VDD for core logic and VDDQ for I/O buffers. Although both are rated at 1.8V ±0.15V, they must be physically separated on the PCB to prevent switching noise from the data bus from coupling into the core logic domain. This separation is mandatory per the datasheet and essential for stable operation at 200MHz with tight timing margins.