Winbond Electronics Corporation W948D6KBHX5I TR

Overview

W948D6KBHX5I TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 200MHz clock rate, 1.8V VDD/VDDQ supply, and industrial temperature range (−40°C to +85°C). It implements four internal banks, burst lengths of 2/4/8/16, CAS latency 2 or 3, and low-power features including Deep Power Down, Partial Array Self Refresh, and Automatic Temperature Compensated Self Refresh - deployed in battery-constrained mobile SoC memory subsystems.

For engineers reviewing the W948D6KBHX5I TR datasheet, W948D6KBHX5I TR pinout, W948D6KBHX5I TR application, or W948D6KBHX5I TR equivalent, key selection criteria include LPDDR timing compliance (tRP, tRFC, tMRD), VFBGA-60 ball mapping, differential CK/CK inputs, bidirectional DQS strobes, programmable drive strength, and industrial-grade thermal reliability for embedded mobile platforms.

Technical Context

This LPDDR SDRAM uses synchronous double-data-rate architecture with differential clock inputs (CK/CK) and edge-aligned DQS for read capture and center-aligned DQS for write capture. Its command interface relies on CS, RAS, CAS, WE, CKE, and bank/address signals to manage ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, and SELF REFRESH states across four independent banks.

Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable burst type (sequential/interleave), auto precharge via A10, and status register read (SRR) for real-time monitoring of refresh and power modes.

Key Specifications

Pinout & Package

Package: 60-ball Very Fine Pitch Ball Grid Array (VFBGA), 6.4mm × 8.0mm × 0.6mm, 0.5mm ball pitch, JEDEC MO-247 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W948D6KBHX5I TR, MT46H256M16LFQ-5IT:C offers identical electrical performance but demands board-level adaptation, while K4E6E304EC-5CG3 provides drop-in package compatibility but sacrifices ATCSR and drive tuning-making W948D6KBHX5I TR optimal for thermally dynamic, power-sensitive mobile designs.

Availability

W948D6KBHX5I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, IoT edge gateway RAM, and automotive infotainment DRAM applications requiring stable component supply, long-term lifecycle support, and industrial temperature assurance.

Supply support for W948D6KBHX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, LPDDR SDRAM, and TrustME secure memory products.

The W948D6KBHX series belongs to Winbond's mobile LPDDR SDRAM product line, designed specifically for power-constrained portable devices requiring high bandwidth, multi-bank concurrency, and advanced low-power states like Deep Power Down and ATCSR.

FAQ

What is the required initialization sequence for W948D6KBHX5I TR?

W948D6KBHX5I TR requires an 11-step initialization: (1) ramp VDD/VDDQ with CKE high, (2) apply stable clocks, (3) wait ≥200μs with NOP/DESELECT, (4) issue PRECHARGE ALL, (5) wait tRP, (6) issue two AUTO REFRESH commands each followed by tRFC delay, (7) program Mode Register, (8) wait tMRD, (9) program Extended Mode Register, (10) wait tMRD, (11) device ready. Skipping any step risks undefined behavior.

Does W948D6KBHX5I TR support both sequential and interleave burst types?

Yes, W948D6KBHX5I TR supports both sequential and interleave burst types, selectable via bit A3 in the Mode Register. Sequential mode accesses columns in linear order (e.g., 0→1→2→3), while interleave mode uses Gray-code-like ordering (e.g., 0→1→2→3 becomes 0→1→3→2) to improve cache line efficiency in certain memory access patterns.

How does Partial Array Self Refresh (PASR) function in W948D6KBHX5I TR?

In W948D6KBHX5I TR, PASR allows the memory controller to specify which banks or subarrays remain active during self-refresh, reducing refresh current by limiting charge restoration to only retained data regions. This is configured via Extended Mode Register bits and cuts typical self-refresh power by up to 50% compared to full-array refresh.

What is the ball pitch and footprint compatibility of W948D6KBHX5I TR?

W948D6KBHX5I TR uses a 60-ball VFBGA package with 0.5mm ball pitch, 6.4mm × 8.0mm body size, and MO-247 mechanical standard. Its ball map is unique to Winbond's W948D6KBHX family and not pin-compatible with Micron or Samsung 60-ball LPDDR2 packages - PCB layout must follow Winbond's documented ball configuration.

Can W948D6KBHX5I TR operate reliably at −40°C ambient temperature?

Yes, W948D6KBHX5I TR is explicitly qualified for industrial temperature operation from −40°C to +85°C case temperature. Its ATCSR feature dynamically adjusts refresh intervals across this range, and all AC/DC specifications-including tRP, tRFC, and setup/hold times-are guaranteed across the full industrial range per the datasheet revision A01-002.