Winbond Electronics Corporation W948D6KBHX6E

Overview

W948D6KBHX6E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 166MHz clock rate, 1.8V VDD/VDDQ supply, and 60-ball VFBGA package. It supports CAS latency 2/3, burst lengths 2–16, four internal banks, and low-power modes including Deep Power Down and Partial Array Self Refresh for battery-constrained portable applications.

For engineers reviewing the W948D6KBHX6E datasheet, W948D6KBHX6E pinout, W948D6KBHX6E application, or W948D6KBHX6E equivalent, key selection criteria include its 166MHz timing grade, -25°C to +85°C extended temperature range, LVCMOS-compatible interface, and support for clock stop and automatic temperature-compensated self-refresh in mobile SoC memory subsystems.

Technical Context

This LPDDR SDRAM implements a four-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its command interface uses differential CK/CK inputs, bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible control signals (CS, RAS, CAS, WE, CKE) synchronized to the crossing of CK and CK edges.

Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable output drive strength, auto-precharge, and status register read (SRR) for real-time monitoring of refresh and power states.

Key Specifications

Pinout & Package

W948D6KBHX6E is housed in a 60-ball Very Fine Pitch Ball Grid Array (VFBGA) measuring 5.0mm × 8.0mm × 0.6mm with 0.5mm ball pitch. The package supports board-level reliability requirements for handheld devices and features separate VDD/VSS and VDDQ/VSSQ supplies for noise isolation between core logic and I/O buffers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H64M16LFCK-6 IT and IS42S16160J-6BLI, W948D6KBHX6E uniquely combines 60-ball VFBGA packaging, 1.8V operation, and full LPDDR power management (DPD, PASR, ATCSR) - making it the only viable option for space- and battery-constrained mobile designs requiring guaranteed -25°C to +85°C operation at 166MHz.

Availability

W948D6KBHX6E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet GPU buffers, wearable runtime memory, and IoT edge boot memory requiring stable component supply across production lifecycles.

Supply support for W948D6KBHX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for consumer, industrial, and automotive markets.

The W948D6KBHX6E belongs to Winbond's mobile LPDDR SDRAM product line, engineered specifically for low-voltage, low-power, high-density memory needs in portable electronics with stringent thermal and footprint constraints.

FAQ

What is the maximum operating frequency of the W948D6KBHX6E?

The W948D6KBHX6E is rated for a maximum clock frequency of 166MHz, corresponding to a data transfer rate of 332 megatransfers per second (MT/s) due to its double data rate architecture. This timing grade is explicitly defined in the order information table for the "-6" suffix variant and confirmed in AC characteristics section 9.5 of the datasheet.

Does the W948D6KBHX6E support partial array self-refresh (PASR)?

Yes, the W948D6KBHX6E supports Partial Array Self Refresh (PASR) as a standard feature, enabled via the Extended Mode Register. PASR allows the device to refresh only selected sub-arrays while keeping others inactive, reducing self-refresh current by up to 50% in applications with localized memory access patterns.

What package type and dimensions does the W948D6KBHX6E use?

The W948D6KBHX6E uses a 60-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 5.0mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This compact, low-profile package is specified in Section 4 (Ball Configuration) and Figure 10 (Package Dimensions) of the datasheet.

Can the W948D6KBHX6E operate at 1.2V I/O voltage?

No, the W948D6KBHX6E requires VDDQ = 1.8V ±0.15V as specified in Section 2 (Features) and Section 3 (Order Information). It is not compatible with 1.2V LPDDR2/LPDDR3 interfaces and must be powered from a dedicated 1.8V supply rail.

What is the purpose of the UDQS and LDQS pins on the W948D6KBHX6E?

The UDQS and LDQS pins on the W948D6KBHX6E serve as bidirectional data strobes: UDQS controls DQ8–DQ15 and LDQS controls DQ0–DQ7. During reads, they are edge-aligned with data; during writes, they are center-aligned to enable precise capture timing. Their differential pairing with DQ lanes ensures robust signal integrity in high-speed mobile memory interfaces.