Winbond Electronics Corporation W948D6KBHX6E TR

Overview

W948D6KBHX6E TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 166MHz clock rate, 1.8V VDD/VDDQ supply, four internal banks, and support for CAS latency 2/3, burst lengths 2–16, and low-power modes including Deep Power Down and Partial Array Self Refresh. It targets memory subsystems in portable embedded systems requiring high bandwidth and ultra-low standby power.

For engineers reviewing the W948D6KBHX6E TR datasheet, W948D6KBHX6E TR pinout, W948D6KBHX6E TR application, or W948D6KBHX6E TR equivalent, key selection criteria include its 60-ball VFBGA package, differential CK/CK̄ interface, bidirectional DQS strobes, LVCMOS-compatible signaling, and temperature range (–25°C to +85°C) for extended industrial use cases.

Technical Context

This LPDDR SDRAM implements a four-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its command set includes ACTIVE, READ/WRITE with auto-precharge, PRECHARGE ALL, AUTO REFRESH, SELF REFRESH, and Deep Power Down entry/exit - all synchronized to differential CK/CK̄ edges.

Initialization requires strict sequencing: stable VDD/VDDQ with CKE HIGH, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable output drive strength, ATCSR for thermal self-refresh tuning, and PASR to reduce refresh power by limiting active array segments.

Key Specifications

Pinout & Package

W948D6KBHX6E TR uses a 60-ball VFBGA package with 0.5mm pitch and standard LPDDR ball map. Power and ground are distributed across VDD, VDDQ, VSS, and VSSQ pins to minimize noise coupling between core logic and I/O drivers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H32M16LFCK-6 IT:F and IS42S16160F-6BLI, W948D6KBHX6E TR delivers superior power efficiency through integrated PASR, ATCSR, and Deep Power Down - enabling longer battery life in portable medical and consumer devices without compromising bandwidth or footprint.

Availability

W948D6KBHX6E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, industrial tablet main memory, automotive infotainment head units, portable medical imaging devices, and other embedded systems requiring stable component supply with guaranteed long-term LPDDR2 compatibility.

Supply support for W948D6KBHX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

The W948D6KBHX series belongs to Winbond's mobile LPDDR2 SDRAM product line, designed specifically for space-constrained, battery-powered embedded systems demanding high bandwidth, low active power, and ultra-low standby current.

FAQ

What is the maximum data transfer rate supported by W948D6KBHX6E TR?

W948D6KBHX6E TR supports a maximum clock frequency of 166MHz with double-data-rate operation, delivering a peak transfer rate of 332 megatransfers per second (MT/s). This translates to 664MB/s effective bandwidth across its x16 interface, confirmed in the device's AC characteristics table and timing diagrams for READ and WRITE operations.

Does W948D6KBHX6E TR support automatic temperature-compensated self-refresh (ATCSR)?

Yes, W948D6KBHX6E TR explicitly supports Automatic Temperature Compensated Self Refresh (ATCSR) as defined in Section 7.4.3 of its datasheet. This feature dynamically adjusts the self-refresh interval based on die temperature, reducing refresh power at lower temperatures while maintaining data retention integrity - a key advantage over basic self-refresh-only LPDDR2 devices.

What package type and dimensions does W948D6KBHX6E TR use?

W948D6KBHX6E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 10.5mm × 0.6mm with 0.5mm ball pitch. This package is documented in Section 10 of the datasheet and matches the mechanical outline specified for the W948D6KBHX family across all speed grades and temperature variants.

Can W948D6KBHX6E TR operate with CAS latency 2 and 3?

Yes, W948D6KBHX6E TR supports both CAS latency 2 and CAS latency 3, as stated in Section 2 (Features) and detailed in Section 7.3.4 (CAS Latency) of the datasheet. The selected CL value is programmed into the Mode Register during initialization and affects minimum read-to-output timing - CL2 enables tighter timing for latency-critical applications.

What is the purpose of the UDM and LDM pins on W948D6KBHX6E TR?

The UDM (Upper Data Mask) and LDM (Lower Data Mask) pins on W948D6KBHX6E TR provide byte-level write masking: LDM controls DQ0–DQ7, and UDM controls DQ8–DQ15. During WRITE operations, data is masked when the respective DM signal is sampled HIGH on both edges of DQS, allowing partial-word writes without read-modify-write cycles - essential for efficient cache-line updates and memory-mapped peripheral access.