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Winbond Electronics Corporation W948D6KBHX6I

Part No.:
W948D6KBHX6I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW948D6KBHX6I.pdf
Description:
IC DRAM 256MBIT PAR 60VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,645

Please send an inquiry. Send us your inquiry, and we will respond immediately.

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Product details

Overview

W948D6KBHX6I from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 166MHz clock rate, and industrial temperature range (–40°C to +85°C), designed for low-power embedded applications requiring burst-oriented memory access with programmable latency and partial array self-refresh. It operates at 1.8V VDD/VDDQ and supports four internal banks for interleaved operation in portable devices.

For engineers reviewing the W948D6KBHX6I datasheet, W948D6KBHX6I pinout, W948D6KBHX6I application, or W948D6KBHX6I equivalent, key selection criteria include CAS latency (CL=2/3), burst length (2/4/8/16), deep power-down mode, differential clock interface (CK/CK̄), and 60-ball VFBGA package compatibility with mobile SoC memory subsystems.

Technical Context

This LPDDR SDRAM implements a four-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge delays. Its command decoder interprets CS, RAS, CAS, and WE with CKE-synchronized timing, while CK/CK̄ differential inputs govern all address/control sampling and DQS-aligned data transfers.

Initialization requires two auto-refresh cycles, mode register programming (MRS/EMRS), and strict tMRD wait states before operation. The device supports programmable output drive strength, automatic temperature-compensated self-refresh (ATCSR), and partial array self-refresh (PASR) to reduce dynamic and standby power in battery-constrained systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256Mb (32MB), organized as 4 banks × 8K rows × 512 columns × x16
Clock Rate 166MHz - defines maximum sustained transfer rate of 332 MT/s per data line
CAS Latency CL = 2 or 3 - determines minimum read-to-data-valid delay in clock cycles
Burst Length 2, 4, 8, or 16 - sets contiguous column access count per READ/WRITE command
Supply Voltage VDD = VDDQ = 1.8V ±0.15V - fixed dual-rail supply enabling LVCMOS-compatible I/O
Operating Temperature –40°C to +85°C case temperature - qualified for industrial-grade mobile and embedded platforms
Package 60-ball VFBGA (5.0mm × 8.0mm × 0.6mm) - surface-mount footprint optimized for thin mobile PCBs

Pinout & Package

W948D6KBHX6I uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, designed for high-density mobile PCB layouts and thermal efficiency in space-constrained applications.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Input Row/column address inputs; A10 doubles as Auto Precharge select
BA0, BA1 Bank Address Selects one of four internal banks for ACTIVE/READ/WRITE/PRECHARGE commands
CS, RAS, CAS, WE Command Control Encoded command bus; synchronous with CKE and CK/CK̄ edges
CK, CK̄ Differential Clock Reference for all input sampling and bidirectional DQ/DQS timing; enables jitter tolerance
DQ0–DQ15 Data I/O x16 bidirectional data bus; edge-aligned on read, center-aligned on write via DQS strobes
UDQS, LDQS Data Strobe Separate strobes for upper/lower byte groups; used to capture write data and source read data
UDM, LDM Data Mask Write mask signals-sampled on both DQS edges to suppress individual byte writes
VDD, VDDQ, VSS, VSSQ Power/Ground Split rails: VDD/VSS for core logic, VDDQ/VSSQ for I/O drivers to isolate noise

Key Features

Feature Design Value
Deep Power Down (DPD) Reduces standby current to ≤10μA - extends battery life during system sleep without losing memory state
Partial Array Self Refresh (PASR) Refreshes only active memory subarrays - cuts self-refresh power by up to 50% vs full-array mode
Automatic Temperature Compensated Self Refresh (ATCSR) Adjusts refresh interval based on die temperature - maintains data retention while minimizing power at low temp
Programmable Output Drive Strength Configurable via EMRS - optimizes signal integrity and EMI across varying trace lengths and loads
Auto Precharge Option Enables automatic bank precharge after each burst - simplifies controller logic and reduces command overhead

Applications

Smartphone Application Processor Memory Industrial IoT Edge Controller

Use Scenario: Main memory for ARM-based application processors in Android smartphones with display, camera, and connectivity subsystems.

IC Role / Device Role / Timing Role: Low-latency, burst-access DRAM providing instruction/data storage with CL=2/3 and 166MHz clock synchronization to SoC memory controller.

Use Value: Enables 332 MT/s bandwidth within 1.8V power envelope and supports DPD mode to extend standby time between user interactions.

Use Scenario: Local memory for real-time sensor fusion and protocol translation in sealed industrial gateways operating unattended for years.

IC Role / Device Role / Timing Role: Industrial-temperature LPDDR buffer storing firmware, telemetry buffers, and OTA update payloads with ATCSR and PASR for minimal energy draw.

Use Value: Maintains data integrity across –40°C to +85°C while reducing average self-refresh power by >40% versus standard LPDDR.

Portable Medical Diagnostic Device Automotive Infotainment Head Unit

Use Scenario: Memory subsystem in handheld ultrasound or ECG analyzers requiring rapid image frame buffering and low EMI emissions.

IC Role / Device Role / Timing Role: Burst-capable x16 DRAM interfacing to medical SoC via differential CK/CK̄ and DQS-strobed DQ lines to meet IEC 60601 immunity requirements.

Use Value: Achieves <10μA DPD current and programmable drive strength to comply with strict radiated emission limits in battery-powered diagnostics.

Use Scenario: Graphics and OS memory in automotive infotainment units with ASIL-B functional safety constraints and thermal cycling exposure.

IC Role / Device Role / Timing Role: Industrial-grade LPDDR supporting boot-time initialization, multi-bank interleaving, and robust clock-stop capability during display blanking intervals.

Use Value: Guarantees reliable operation over 10,000+ thermal cycles while enabling clock-stop to eliminate dynamic switching noise during audio playback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT46H32M16LFCK-6 IT Same density (256Mb), x16, 166MHz, but uses 78-ball VFBGA and supports CL=2 only Requires PCB redesign due to larger footprint and lacks PASR/ATCSR features Choose when legacy Micron footprint compatibility is required and deep power savings are secondary
ISSI IS42S16160J-6BLI 256Mb x16 LPDDR, 166MHz, –40°C to +85°C, but no DPD mode or ATCSR support Higher standby current in extended idle periods; limited low-power feature set Prefer where cost sensitivity outweighs advanced power management needs

Compared with W948D6KBHX6I, MT46H32M16LFCK-6 IT offers identical speed and temperature rating but lacks PASR and ATCSR, while IS42S16160J-6BLI omits deep power down entirely-making W948D6KBHX6I the only option delivering full low-power feature integration in a 60-ball industrial LPDDR package.

Availability

W948D6KBHX6I is available at Aetrix Electronics and suitable for smartphone application processors, industrial IoT edge controllers, portable medical diagnostics, automotive infotainment head units, and battery-powered embedded systems requiring stable component supply with guaranteed long-term manufacturability.

Supply support for W948D6KBHX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

W948D6KBHX6I belongs to Winbond's LPDDR SDRAM product line, engineered specifically for power-constrained portable electronics that demand high bandwidth, industrial temperature resilience, and advanced self-refresh intelligence.

FAQ

What is the maximum supported burst length for W948D6KBHX6I?

W948D6KBHX6I supports burst lengths of 2, 4, 8, and 16, selectable via Mode Register bits A0–A2. Each burst accesses contiguous or interleaved column locations within an active page, with addressing determined by A1–An depending on configured length. This flexibility allows optimization for sequential streaming or random access patterns in the W948D6KBHX6I memory subsystem.

Does W948D6KBHX6I support differential clock inputs?

Yes, W948D6KBHX6I uses differential clock inputs CK and CK̄. All address and control signals are sampled on the crossing of CK's positive edge and CK̄'s negative edge, and data is referenced to both crossings. This differential architecture improves noise immunity and timing margin in high-speed mobile PCB environments where the W948D6KBHX6I is deployed.

What power-saving modes does W948D6KBHX6I implement?

W948D6KBHX6I implements Power Down, Deep Power Down (DPD), Self Refresh, Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR). DPD reduces current to ≤10μA, while PASR and ATCSR dynamically scale refresh activity-key differentiators that make W948D6KBHX6I suitable for always-on battery-powered applications.

Is W948D6KBHX6I compatible with standard LPDDR2 controllers?

W948D6KBHX6I is an LPDDR (Low Power DDR) SDRAM-not LPDDR2-and complies with JEDEC JESD209 specification for first-generation LPDDR. It is not electrically or protocol-compatible with LPDDR2 controllers due to differences in command encoding, timing parameters, and voltage thresholds. System integration requires an LPDDR-compliant memory controller matched to the W948D6KBHX6I specification.

What is the ball pitch and footprint size of the W948D6KBHX6I package?

W948D6KBHX6I uses a 60-ball Very Thin Fine-Pitch BGA (VFBGA) package with 0.5mm ball pitch and overall dimensions of 5.0mm × 8.0mm × 0.6mm. This compact, low-profile footprint supports high-density routing in slim mobile and wearable form factors where the W948D6KBHX6I is commonly applied.

W948D6KBHX6I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR
Memory Size:
256Mbit
Memory Organization:
16M x 16
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
5 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-VFBGA (8x9)

W948D6KBHX6I FAQ

1.How can I place an order for W948D6KBHX6I through Aetrix?

Please submit a Request for Quotation (RFQ) for W948D6KBHX6I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W948D6KBHX6I reliable?

The price and inventory of W948D6KBHX6I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W948D6KBHX6I is usually 5 days.

3.What payment methods are accepted for W948D6KBHX6I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W948D6KBHX6I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W948D6KBHX6I?

W948D6KBHX6I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W948D6KBHX6I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W948D6KBHX6I?

For technical support, including W948D6KBHX6I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W948D6KBHX6I requirements.

6.How does Aetrix verify that W948D6KBHX6I is sourced from the original manufacturer or authorized distributors?

All W948D6KBHX6I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W948D6KBHX6I meets industry standards.

7.What is the process for return or replacement of W948D6KBHX6I?

All W948D6KBHX6I units undergo pre-shipment inspection (PSI). If there is an issue with W948D6KBHX6I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W948D6KBHX6I part is unused and in its original packaging.

Return procedure for W948D6KBHX6I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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