Winbond Electronics Corporation W948V6KBHX5E

Overview

W948V6KBHX5E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 200MHz clock rate (CL=2/3), 1.8V VDD/VDDQ supply, and 60-ball VFBGA package. It delivers burst-oriented memory access with programmable burst lengths (2/4/8/16), sequential or interleaved burst types, and supports partial array self-refresh (PASR) and automatic temperature-compensated self-refresh (ATCSR) for low-power mobile applications including smartphones and tablets.

For engineers reviewing the W948V6KBHX5E datasheet, W948V6KBHX5E pinout, W948V6KBHX5E application, or W948V6KBHX5E equivalent, key selection criteria include its LPDDR interface compliance, 4-bank architecture, deep power-down (DPD) and DSR modes, differential clock (CK/CK̄) timing, and ball-mapped I/O configuration for high-density mobile PCB layout.

Technical Context

This LPDDR SDRAM implements a 4-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its command set includes ACTIVE, READ/WRITE with auto-precharge, PRECHARGE ALL, AUTO REFRESH, SELF REFRESH, POWER DOWN, and DEEP POWER DOWN - all synchronized to differential CK/CK̄ edges.

Initialization requires strict sequencing: stable VDD/VDDQ + CKE HIGH → ≥200μs clock stabilization → PRECHARGE ALL → tRP wait → two AUTO REFRESH commands → Mode Register Set → Extended Mode Register Set. The device supports LVCMOS-compatible signaling, bidirectional DQS strobes (LDQS/UDQS), and data masking (LDM/UDM) aligned to DQS edges for reliable write capture.

Key Specifications

Pinout & Package

Package: 60-ball Very Fine Pitch Ball Grid Array (VFBGA), 6.4mm × 8.0mm × 0.6mm, 0.5mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W948V6KBHX5E, MT46H256M16LFQ-5IT trades 34MHz bandwidth for broader availability and relaxed timing margins, while EM68B16CWQ-5G matches performance exactly but extends temperature coverage - making W948V6KBHX5E optimal for cost-sensitive extended-temp consumer designs.

Availability

W948V6KBHX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, wearable OS runtime memory, and IoT edge device cache memory requiring stable component supply across high-volume production cycles.

Supply support for W948V6KBHX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

W948V6KBHX5E belongs to Winbond's LPDDR SDRAM product line, designed specifically for battery-constrained portable devices demanding high bandwidth per watt and JEDEC-compliant mobile memory interfaces.

FAQ

What is the maximum clock frequency supported by W948V6KBHX5E?

W948V6KBHX5E supports a maximum clock frequency of 200MHz, corresponding to the –5 speed grade. This is confirmed in the Order Information table and Electrical Characteristics section of the datasheet. At this frequency, the device achieves CL=2 or CL=3 timing depending on configuration. Operation above 200MHz is not guaranteed and may result in timing violations or data corruption.

Does W948V6KBHX5E support deep power-down mode with data retention?

Yes, W948V6KBHX5E supports Deep Power Down (DPD) mode with full data retention, as well as Deep Power Down Quarter Partial Array Self-Refresh (DSR) mode. DSR retains data in one-quarter of the memory array while drawing minimal current, enabling fast wake-up from suspend states. Both modes are activated via specific command sequences and require CKE control, as detailed in Sections 8.13 and 8.11.2 of the datasheet.

What is the ball count and package type of W948V6KBHX5E?

W948V6KBHX5E uses a 60-ball Very Fine Pitch Ball Grid Array (VFBGA) package, measuring 6.4mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This is explicitly stated in the Features section and illustrated in the Ball Assignment diagram (Page 5). The package is RoHS-compliant and optimized for high-density mobile PCB layouts.

How many internal banks does W948V6KBHX5E have, and why does it matter?

W948V6KBHX5E contains four independent internal banks. This architecture enables bank interleaving - allowing an ACTIVE command to one bank while another bank performs READ/WRITE or PRECHARGE - thereby hiding precharge and activation latency and improving effective bandwidth. The BA0 and BA1 pins select the target bank for each command, as defined in Section 5.1 Ball Descriptions.

What are the valid CAS latency settings for W948V6KBHX5E?

W948V6KBHX5E supports CAS Latency (CL) settings of 2 and 3, as specified in the Features section and Mode Register Definition (Section 7.3). These values are programmed via bits A4–A6 in the Mode Register using the MODE REGISTER SET command. CL=2 provides lower read latency at the cost of tighter timing margins; CL=3 offers greater robustness in electrically noisy or thermally stressed environments.