Winbond Electronics Corporation W948V6KBHX5E TR

Overview

W948V6KBHX5E TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 200MHz clock rate (CL=3), 1.8V VDD/VDDQ supply, and 60-ball VFBGA package. It delivers burst-oriented memory access with programmable burst lengths (2/4/8/16), sequential or interleaved burst types, and supports partial array self-refresh (PASR) and automatic temperature-compensated self-refresh (ATCSR) for low-power mobile applications including smartphones and portable tablets.

For engineers reviewing the W948V6KBHX5E TR datasheet, W948V6KBHX5E TR pinout, W948V6KBHX5E TR application, or W948V6KBHX5E TR equivalent, key selection considerations include its LPDDR interface compliance, 4-bank architecture enabling bank interleaving, deep power-down (DPD) and DSR modes, differential CK/CK inputs, bidirectional DQS strobes, and LVCMOS-compatible signaling for integration into power-constrained SoC memory subsystems.

Technical Context

The W948V6KBHX5E TR implements a synchronous double-data-rate architecture with four independent internal banks, enabling concurrent row activation and column access to hide precharge latency. Its command decoder interprets CS, RAS, CAS, and WE in combination with BA0/BA1 to execute ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, and MODE REGISTER SET operations.

It features dual-mode register programming: base Mode Register (MRS) sets burst length, burst type, and CAS latency (CL=2 or 3), while Extended Mode Register (EMRS) configures PASR, ATCSR, output drive strength, and deep power-down quarter-array self-refresh (DSR). Initialization requires strict sequencing: power ramp with CKE high, 200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then MRS and EMRS loading with tMRD delays.

Key Specifications

Pinout & Package

W948V6KBHX5E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch and 8mm × 8.1mm body size. Power and ground balls are distributed across the array to minimize IR drop and improve signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H256M16LFQ-5IT:C and W948D6KBHX5E TR, the W948V6KBHX5E TR uniquely balances 200MHz LPDDR throughput with industry-leading low-power features-PASR, ATCSR, and DSR-enabling optimal energy efficiency in thermally constrained mobile platforms without sacrificing JEDEC-compliant interoperability.

Availability

W948V6KBHX5E TR is available at Aetrix Electronics and suitable for smartphone main memory, portable tablet runtime storage, wearable OS execution, IoT gateway buffering, and embedded HMI applications requiring stable component supply across multi-year production cycles.

Supply support for W948V6KBHX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, with global manufacturing and quality certifications.

The W948V6KBHX5E TR belongs to Winbond's LPDDR SDRAM product line, designed specifically for power- and space-constrained mobile computing devices requiring JEDEC-compliant low-voltage, high-bandwidth memory with advanced power management.

FAQ

What is the maximum data rate supported by the W948V6KBHX5E TR?

The W948V6KBHX5E TR supports a maximum clock frequency of 200MHz, delivering an effective data rate of 400 MT/s due to its double-data-rate architecture. This is confirmed in the Order Information table and Electrical Characteristics section of the datasheet, where the "-5" speed grade is explicitly rated for 200MHz operation with CL=3 timing. The W948V6KBHX5E TR achieves this rate using differential CK/CK inputs and edge-aligned DQS strobes to maintain signal integrity at high speeds.

Does the W948V6KBHX5E TR support partial array self-refresh (PASR)?

Yes, the W948V6KBHX5E TR fully supports Partial Array Self-Refresh (PASR), as documented in Section 2 FEATURES and Section 7.4.2 of the datasheet. PASR allows the device to refresh only selected subarrays (full, half, or quarter) rather than the entire memory array, reducing self-refresh current by up to 50%. Configuration is performed via the Extended Mode Register (EMRS), and the feature is validated for operation across the full -25°C to +85°C temperature range specified for the W948V6KBHX5E TR.

What package type and ball count does the W948V6KBHX5E TR use?

The W948V6KBHX5E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, as stated in Section 2 FEATURES and illustrated in Section 4 BALL ASSIGNMENT. The mechanical dimensions are 8.0mm × 8.1mm with a maximum height of 0.6mm. This package is optimized for mobile PCBs with tight spacing requirements and is shared across the W948V6KBHX family, including the W948V6KBHX5E TR, W948V6KBHX5I TR, and other speed/temperature variants.

How does the W948V6KBHX5E TR handle initialization after power-up?

The W948V6KBHX5E TR requires a strict 11-step initialization sequence detailed in Section 7.1. This includes powering VDD and VDDQ simultaneously with CKE held high, applying stable clocks for ≥200μs, issuing PRECHARGE ALL, two AUTO REFRESH commands separated by tRFC, then programming the Mode Register and Extended Mode Register with tMRD delays between steps. Skipping or reordering these steps-especially omitting the second AUTO REFRESH or mis-timing tMRD-will result in undefined operation of the W948V6KBHX5E TR.

Is the W948V6KBHX5E TR compatible with LPDDR2 or LPDDR3 controllers?

No, the W948V6KBHX5E TR is a native LPDDR (Low Power DDR) SDRAM, not LPDDR2 or LPDDR3. It complies with the original JEDEC LPDDR standard (JESD209), featuring 1.8V VDDQ, specific command encoding (e.g., EMRS for PASR), and timing parameters distinct from later generations. Controllers must be explicitly designed for LPDDR-not LPDDR2 or LPDDR3-to correctly interpret its mode registers, DQS timing, and low-power command sequences. Using it with an LPDDR2/3 controller will cause functional failure.