Winbond Electronics Corporation W948V6KBHX5I

Overview

W948V6KBHX5I from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 200MHz clock rate, 1.8V VDD/VDDQ supply, and industrial temperature range (−40°C to +85°C). It implements four internal banks, programmable burst lengths (2/4/8/16), CAS latency 2 or 3, and low-power modes including Deep Power Down and Partial Array Self Refresh - deployed in battery-constrained mobile SoC memory subsystems.

For engineers reviewing the W948V6KBHX5I datasheet, W948V6KBHX5I pinout, W948V6KBHX5I application, or W948V6KBHX5I equivalent, key selection criteria include its 60-ball VFBGA package, LVCMOS-compatible interface, differential CK/CK inputs, bidirectional DQS strobes, and support for ATCSR and PASR - critical for power-optimized mobile DRAM integration.

Technical Context

This LPDDR SDRAM uses a synchronous double-data-rate architecture with differential clock inputs (CK/CK) and edge-aligned DQS for read capture and center-aligned DQS for write capture. Its command decoder interprets CS, RAS, CAS, and WE in conjunction with BA0/BA1 bank select and A[12:0] address lines to execute ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, and low-power entry/exit sequences.

Internal operation relies on four independent banks enabling bank interleaving to hide precharge latency. Mode Register (MRS) and Extended Mode Register (EMRS) configure burst type (sequential/interleave), drive strength, PASR granularity, and Automatic Temperature Compensated Self Refresh - all required to be programmed during initialization before valid access.

Key Specifications

Pinout & Package

W948V6KBHX5I is housed in a 60-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 10.5mm × 0.65mm (height), with 0.5mm ball pitch and Pb-free, RoHS-compliant construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H256M16LFQ-5IT and W948D6KBHX5I, W948V6KBHX5I provides unique LPDDR1 protocol compliance, 1.8V-only operation, and industry-leading low-power features (PASR, ATCSR, DSR) - making it optimal for cost-sensitive, thermally constrained, or legacy-controller-based mobile designs.

Availability

W948V6KBHX5I is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, industrial handheld terminal RAM, automotive infotainment display caches, and embedded SoC boot memory requiring stable component supply across long production lifecycles.

Supply support for W948V6KBHX5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for consumer, industrial, and automotive markets.

W948V6KBHX5I belongs to Winbond's LPDDR1 SDRAM product line, designed specifically for mobile and portable electronics where low-voltage operation, multi-bank concurrency, and advanced power management are essential.

FAQ

What is the maximum data rate supported by W948V6KBHX5I?

W948V6KBHX5I supports a maximum clock frequency of 200MHz, delivering an effective data rate of 400MT/s using double-data-rate architecture. This is confirmed in the Features section and Electrical Characteristics tables of the official datasheet (Rev. A01-002, Jun. 2018), where tCK(min) = 5.0ns corresponds to 200MHz operation.

Does W948V6KBHX5I support both sequential and interleaved burst types?

Yes, W948V6KBHX5I supports both sequential and interleaved burst types, selectable via bit A3 in the Mode Register. This is explicitly defined in Section 7.3.3 (Burst Type) and Table 7.3.2 (Burst Definition), which lists access ordering for burst lengths 2, 4, 8, and 16 under both configurations.

What low-power modes are implemented in W948V6KBHX5I?

W948V6KBHX5I implements five low-power modes: Power Down, Deep Power Down (DPD), Standard Self Refresh, Partial Array Self Refresh (PASR), and Deep power down quarter partial array Self Refresh (DSR). These are detailed in Sections 2 (Features) and 8.11–8.13 of the datasheet, with DSR enabling retention of one-quarter array while drawing <5μA.

Is W948V6KBHX5I pin-compatible with other Winbond LPDDR parts?

No, W948V6KBHX5I is not pin-compatible with later-generation Winbond LPDDR2 or LPDDR3 devices such as W948D6KBHX5I due to differences in voltage requirements (1.2V vs 1.8V), command encoding, and DQS timing behavior. Pin compatibility is limited to same-generation LPDDR1 variants like W948V6KBHX6I (166MHz version), sharing identical 60-ball VFBGA mapping.

What is the purpose of the A10/AP pin on W948V6KBHX5I?

The A10 pin on W948V6KBHX5I serves dual function: as address bit A10 during normal operation and as Auto Precharge Enable (AP) during READ/WRITE commands. When A10 is HIGH during a READ or WRITE, the device automatically issues a PRECHARGE command at burst end - reducing controller overhead and improving efficiency in page-mode access.