Winbond Electronics Corporation W948V6KBHX5I TR

Overview

W948V6KBHX5I TR from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data width, 200MHz clock rate, and industrial temperature range (−40°C to +85°C), designed for low-power embedded systems requiring burst-oriented memory access with programmable CAS latency (CL=2/3), four internal banks, and differential clock inputs (CK/CK̄). It supports partial array self-refresh (PASR) and automatic temperature-compensated self-refresh (ATCSR) for extended battery life in portable devices.

For engineers reviewing the W948V6KBHX5I TR datasheet, W948V6KBHX5I TR pinout, W948V6KBHX5I TR application, or W948V6KBHX5I TR equivalent, key selection criteria include VDD/VDDQ = 1.8V, 60-ball VFBGA package, deep power-down (DPD) and DSR modes, LVCMOS-compatible interface, and support for sequential/interleaved burst lengths of 2/4/8/16 - all critical for mobile SoC memory subsystem design.

Technical Context

This LPDDR SDRAM implements a four-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its command decoder accepts standard LPDDR control signals (CS, RAS, CAS, WE, CKE) and uses BA0/BA1 for bank selection and A0–A12 for row/column addressing, with A10 configured as auto-precharge enable.

The device integrates dual data strobes (UDQS/LDQS) for source-synchronous read/write timing, supports programmable output drive strength, and features dedicated input masks (UDM/LDM) aligned to upper/lower byte lanes. Its state machine supports 11 distinct operational modes including Deep Power Down (DPDS), Deep power down quarter partial array Self Refresh (DSR), and Clock Stop - all entered and exited via specific command sequences with defined timing constraints (tMRD, tRFC, tRP).

Key Specifications

Pinout & Package

W948V6KBHX5I TR is housed in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 10.5mm × 0.6mm, with 0.5mm ball pitch and RoHS-compliant matte tin finish. The package supports automated surface-mount assembly and thermal dissipation suitable for handheld PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H256M16LFQ-5IT:C and IS42S16160F-6BLI, W948V6KBHX5I TR delivers superior power efficiency through DSR and ATCSR, broader temperature tolerance, and higher sustained bandwidth - making it optimal for next-generation portable and industrial systems demanding both performance and energy discipline.

Availability

W948V6KBHX5I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, industrial IoT edge node buffering, automotive infotainment display caching, portable medical imaging frame buffering, and other applications requiring stable component supply with guaranteed long-term industrial temperature support.

Supply support for W948V6KBHX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

W948V6KBHX5I TR belongs to Winbond's LPDDR SDRAM product line, engineered specifically for mobile and embedded systems where power efficiency, small footprint, and robust operation across wide temperature ranges are essential design requirements.

FAQ

What is the operating voltage range for W948V6KBHX5I TR?

W948V6KBHX5I TR operates with VDD and VDDQ both at 1.8V ± 0.15V (1.65V to 1.95V), as specified in the DC characteristics section. This single-rail 1.8V supply simplifies power delivery design and ensures compatibility with common mobile SoC I/O domains. The device does not support dual-voltage operation or wider voltage tolerances beyond this range.

Does W948V6KBHX5I TR support both sequential and interleaved burst types?

Yes, W948V6KBHX5I TR supports both sequential and interleaved burst types, selectable via bit A3 in the Mode Register. Sequential bursts increment column addresses linearly (e.g., 0→1→2→3), while interleaved bursts follow a scrambled order optimized for cache-line access patterns. This flexibility allows system designers to align memory behavior with processor prefetch strategies.

How many internal banks does W948V6KBHX5I TR have, and why does that matter?

W948V6KBHX5I TR contains four independent internal banks. This architecture enables bank interleaving - for example, activating a row in Bank 0 while reading from Bank 1 - which hides precharge delay (tRP) and improves effective bandwidth in burst-intensive workloads like video playback or graphics rendering.

What is the purpose of the DSR mode in W948V6KBHX5I TR?

DSR (Deep power down quarter partial array Self Refresh) mode in W948V6KBHX5I TR combines deep power-down with partial array self-refresh to retain data in only one-quarter of the memory array while drawing minimal current. This enables ultra-fast wake-up (<1μs) from the lowest power state - ideal for applications requiring instant responsiveness after extended sleep, such as always-on voice assistants.

Is W948V6KBHX5I TR pin-compatible with other Winbond LPDDR parts like W948V6KBHX6I?

No, W948V6KBHX5I TR is not pin-compatible with W948V6KBHX6I. While both share the same 60-ball VFBGA package and ball assignment, W948V6KBHX6I is rated for 166MHz maximum clock speed and has different AC timing parameters. Interchanging them without redesigning timing margins and validation may result in functional failure or data corruption.