Winbond Electronics Corporation W949D2DBJX5E

Overview

W949D2DBJX5E from Winbond is a 512Mb mobile LPDDR SDRAM with x32 data bus, 200MHz clock rate (CL=2/3), 90-ball VFBGA package, and industrial-grade temperature range (-25°C to +85°C). It delivers burst-oriented memory access with four internal banks, programmable burst length (2/4/8/16), and low-power modes including Deep Power Down and Automatic Temperature Compensated Self Refresh for battery-constrained mobile SoC applications.

For engineers reviewing the W949D2DBJX5E datasheet, W949D2DBJX5E pinout, W949D2DBJX5E application, or W949D2DBJX5E equivalent, key selection criteria include its 90VFBGA x32 ball map, CAS latency configuration, PASR/ATCSR support, differential CK/CK inputs, and compatibility with LPDDR interface timing requirements in portable computing and embedded multimedia systems.

Technical Context

The W949D2DBJX5E implements a four-bank architecture enabling bank interleaving to hide precharge latency, with independent row activation and column access per bank. Its command decoder accepts standard LPDDR control signals (CS, RAS, CAS, WE) synchronized to differential CK/CK edges, and supports both auto- and manual precharge modes.

It features dual-mode register programming: base Mode Register sets burst length, burst type (sequential/interleave), and CAS latency; Extended Mode Register configures Partial Array Self Refresh, ATCSR, and output drive strength. Initialization requires two AUTO REFRESH commands and strict tRP/tRFC/tMRD timing compliance before valid operation.

Key Specifications

Pinout & Package

W949D2DBJX5E uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (90VFBGA) package measuring 10.5mm × 13.0mm × 0.6mm (max), optimized for space-constrained mobile PCBs. Ball pitch is 0.5mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H32M32LFQ-5IT and K4E6E304EC-EGCJ, the W949D2DBJX5E provides superior power efficiency through integrated PASR, ATCSR, and Deep Power Down-critical for thermally sensitive or battery-operated devices-while maintaining identical 90VFBGA footprint and LPDDR timing compatibility.

Availability

W949D2DBJX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, automotive infotainment head units, portable medical imaging displays, and other applications requiring stable component supply with guaranteed long-term LPDDR SDRAM availability.

Supply support for W949D2DBJX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, PSRAM, and mobile DRAM products for consumer, industrial, and automotive markets.

The W949D2DBJX5E belongs to Winbond's LPDDR SDRAM product line, designed specifically for power- and space-constrained mobile and embedded systems requiring high bandwidth with aggressive low-power state management.

FAQ

What is the exact package type and ball count for W949D2DBJX5E?

W949D2DBJX5E uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (90VFBGA) package with 0.5mm ball pitch and dimensions of 10.5mm × 13.0mm × 0.6mm maximum height. This matches JEDEC MO-245AC mechanical specifications and is distinct from the 60VFBGA used in the x16 variant W949D6DB series.

Does W949D2DBJX5E support CAS latency of 2, and how is it configured?

Yes, W949D2DBJX5E supports CAS latency of 2 and 3. CL=2 is selected by setting A4–A6 = 000 in the Mode Register via the MODE REGISTER SET command (BA0=BA1=0). This configuration yields minimum read-to-output delay of 2 clock cycles, critical for low-latency mobile applications.

How does Partial Array Self Refresh (PASR) function in W949D2DBJX5E?

In W949D2DBJX5E, PASR allows selective refresh of only active memory subarrays (e.g., ¼, ½, or full array) via Extended Mode Register settings. This reduces self-refresh current proportionally - for example, refreshing one bank instead of all four cuts refresh power by ~75%, extending battery life during light background activity.

What are the voltage requirements for W949D2DBJX5E's VDD and VDDQ supplies?

W949D2DBJX5E requires VDD = VDDQ = 1.8V ± 0.15V (i.e., 1.65V to 1.95V), with simultaneous ramp-up of both rails during power-on to prevent latch-up. The separate VDDQ/VSSQ supply isolates I/O switching noise from core logic, improving signal integrity on high-speed DQ/DQS buses.

Can W949D2DBJX5E be used as a direct replacement for W949D2DBJX5I?

No - W949D2DBJX5E is rated for -25°C to +85°C case temperature, while W949D2DBJX5I is industrial-grade (-40°C to +85°C). Though electrically and mechanically identical, substitution requires thermal validation in environments below -25°C; W949D2DBJX5E is not qualified for full industrial temperature operation.