Winbond Electronics Corporation W949D2DBJX5E TR

Overview

W949D2DBJX5E TR from Winbond is a 512Mb mobile LPDDR SDRAM with x32 data width, 200MHz clock rate, and 90-ball VFBGA package. It operates at 1.8V VDD/VDDQ, supports CAS latency 2/3, burst lengths 2–16, and four internal banks for interleaved access. It serves as main memory in space-constrained portable devices such as smartphones and tablets requiring low-power, high-bandwidth DRAM.

For engineers reviewing the W949D2DBJX5E TR datasheet, W949D2DBJX5E TR pinout, W949D2DBJX5E TR application, or W949D2DBJX5E TR equivalent, key selection criteria include its LPDDR interface compliance, deep power-down mode (DPD), partial array self-refresh (PASR), automatic temperature-compensated self-refresh (ATCSR), and 90-ball VFBGA ball assignment for x32 I/O.

Technical Context

This LPDDR SDRAM implements a synchronous, double-data-rate architecture with differential CK/CK inputs, bidirectional DQS strobes (DQS0–DQS3), and programmable output drive strength. Its four-bank structure enables bank interleaving to hide precharge latency, while auto-precharge and burst-terminate commands optimize sequential access efficiency.

Initialization requires strict sequencing: stable VDD/VDDQ with CKE high, ≥200μs of NOP/DESELECT after clock enable, PRECHARGE ALL, two AUTO REFRESH cycles, then Mode Register and Extended Mode Register programming. The device supports clock stop during idle periods and enters Deep Power Down only upon explicit DPDS command with CKE low.

Key Specifications

Pinout & Package

W949D2DBJX5E TR uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 10.5mm × 12.5mm × 0.6mm (JEDEC MO-245AC). Ball pitch is 0.5mm; balls are arranged in 11 rows (A–R, excluding Q) × 9 columns (1–9), with corner balls omitted for mechanical reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT52L256M32D1PF-107 WT:A and IS42S32400F-6BLI, W949D2DBJX5E TR delivers 87% higher bandwidth, integrated thermal-aware refresh, and 10× lower deep-sleep current-making it optimal for next-gen portable devices where power, speed, and thermal resilience are co-constrained.

Availability

W949D2DBJX5E TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC designs, and portable medical imaging displays requiring stable component supply, long-term lifecycle support, and guaranteed traceability.

Supply support for W949D2DBJX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W949D2DBJX5E TR belongs to Winbond's LPDDR SDRAM product line, engineered specifically for battery-powered portable electronics demanding high bandwidth, ultra-low standby power, and robust operation across variable thermal conditions.

FAQ

What is the exact memory organization of the W949D2DBJX5E TR?

The W949D2DBJX5E TR is organized as 64M words × 32 bits (512Mb total), with four internal banks. Row addresses use A0–A12 (13 bits), column addresses use A0–A8 (9 bits), and bank selection is handled by BA0/BA1. This configuration enables efficient page-mode access and bank interleaving to maximize throughput in mobile SoC memory controllers.

Does the W949D2DBJX5E TR support true LPDDR2 or LPDDR3 protocol?

The W949D2DBJX5E TR implements the JEDEC LPDDR (Low Power DDR) standard as defined in JESD209, commonly referred to as LPDDR1. It does not support LPDDR2 or LPDDR3 features such as higher data rates (>400MT/s), additional command encodings, or enhanced power modes like MP (Mobile Platform) mode. Its 200MHz clock and CL2/3 timing align strictly with LPDDR1 specification compliance.

How is the Deep Power Down (DPD) mode entered and exited on the W949D2DBJX5E TR?

DPD mode on the W949D2DBJX5E TR is entered by issuing the DPDS command (CKE low, CS low, RAS high, CAS high, WE high) while all banks are idle. Exit requires the DPDSX command (CKE high, CS low, RAS high, CAS high, WE high) followed by tXPDLP (≥100ns) before any other command. During DPD, VDD/VDDQ must remain powered, and CKE must be held low until exit sequence completion.

Can the W949D2DBJX5E TR operate with CAS latency 2 and burst length 4 simultaneously?

Yes, the W949D2DBJX5E TR supports CAS latency 2 with burst lengths 2, 4, 8, or 16 via independent Mode Register configuration. Burst length is set by A0–A2, CAS latency by A4–A6, and burst type (sequential/interleave) by A3 - all programmable in a single MRS command. CL2 with BL4 is valid and commonly used to balance latency and bandwidth in real-time UI rendering.

What is the function of the A10/AP pin on the W949D2DBJX5E TR?

On the W949D2DBJX5E TR, the A10 pin serves dual function: as address bit A10 during normal addressing, and as Auto Precharge Select (AP) during READ/WRITE commands. When AP = HIGH, the memory automatically precharges the accessed bank after burst completion; when AP = LOW, manual PRECHARGE is required. This eliminates timing-critical software intervention for common access patterns.