Winbond Electronics Corporation W949D6DBHX5E

Overview

W949D6DBHX5E from Winbond is a 512Mb mobile LPDDR SDRAM (x16) operating at 200MHz with 1.8V VDD/VDDQ supply, CAS latency of 2 or 3, and 4 internal banks - used as main memory in space-constrained portable devices including smartphones and ultra-thin tablets.

For engineers reviewing the W949D6DBHX5E datasheet, W949D6DBHX5E pinout, W949D6DBHX5E application, or W949D6DBHX5E equivalent, this page delivers verified electrical specs, ball assignment for 60-ball VFBGA, low-power mode behavior (DPD, PASR, ATCSR), and direct substitution guidance against industry-standard LPDDR x16 alternatives.

Technical Context

The W949D6DBHX5E implements a synchronous burst-access architecture with differential CK/CK clock inputs, bidirectional DQS strobes (UDQS/LDQS), and programmable mode registers controlling burst length (2/4/8/16), burst type (sequential/interleave), and CAS latency (CL=2 or CL=3). It supports auto-precharge, partial array self-refresh (PASR), and automatic temperature-compensated self-refresh (ATCSR) to reduce dynamic and standby power.

Its 4-bank organization enables bank interleaving to hide precharge latency, while data mask (UDM/LDM) pins allow per-byte write masking. The device enters deep power-down (DPD) mode when CKE is held low with CS active and all banks idle - achieving sub-10μA standby current under specified conditions.

Key Specifications

Pinout & Package

60-ball Very Thin Fine-Pitch Ball Grid Array (60VFBGA), 6.4mm × 8.0mm × 0.6mm body, 0.5mm ball pitch, JEDEC MO-247 compliant. RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR x16 memory applications.

Compared with MT46H32M16LFCK-6 IT:F and K4E6E304EC-EGCJ, the W949D6DBHX5E delivers higher bandwidth and unique low-power features (DPD, ATCSR, PASR) in identical 60VFBGA footprint - making it optimal for new designs prioritizing battery life and performance density.

Availability

W949D6DBHX5E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet main memory, wearable display buffers, and IoT edge gateway caching requiring stable component supply across production lifecycles.

Supply support for W949D6DBHX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W949D6DBHX5E belongs to Winbond's LPDDR SDRAM product line, engineered specifically for battery-powered portable electronics demanding high bandwidth, ultra-low standby power, and compact packaging.

FAQ

What is the maximum data transfer rate supported by the W949D6DBHX5E?

The W949D6DBHX5E supports a 200MHz clock frequency with double-data-rate operation, delivering an effective data transfer rate of 400MT/s. With its x16 interface, this yields a peak bandwidth of 3.2GB/s. This value is confirmed in the AC characteristics section of the official datasheet (Rev. A01-004, Section 9.5), and applies under 1.8V supply and -25°C to 85°C case temperature conditions.

Does the W949D6DBHX5E support Deep Power Down mode, and what is its typical current draw in that state?

Yes, the W949D6DBHX5E supports Deep Power Down (DPD) mode, entered via specific command sequence with CKE low and CS active while all banks are idle. Per datasheet Section 9.4.1, typical DPD current is 5μA at VDD = VDDQ = 1.8V and TCASE = 25°C. This ultra-low current enables multi-week battery standby in always-on portable devices.

How many internal banks does the W949D6DBHX5E have, and why does that matter for system performance?

The W949D6DBHX5E contains four independently addressable internal banks. This allows bank interleaving - for example, activating a row in Bank 1 while reading from Bank 0 - which hides precharge and activation latency. As described in Section 1 General Description, this architecture increases effective memory bandwidth without raising clock frequency, especially under mixed read/write workloads.

What is the purpose of the A10/AP pin on the W949D6DBHX5E, and how is it used?

On the W949D6DBHX5E, the A10 pin serves dual function: as address bit A10 during normal addressing, and as Auto-Precharge Enable (AP) when asserted high during READ or WRITE commands. When AP=1, the memory automatically issues a PRECHARGE command at burst end - reducing controller overhead and eliminating manual bank management for sequential accesses.

Can the W949D6DBHX5E operate with CAS latency set to 2, and what timing constraint does that impose?

Yes, the W949D6DBHX5E supports programmable CAS latency of CL=2 or CL=3 via Mode Register bits A4–A6. CL=2 reduces tRCD (RAS-to-CAS delay) to 12ns (vs 15ns at CL=3), enabling faster read response. However, CL=2 requires stricter setup/hold margins on DQS-to-clock alignment and is only guaranteed across the full temperature range when VDD/VDDQ stability and PCB layout meet Winbond's signal integrity guidelines.