Winbond Electronics Corporation W949D6DBHX5E TR

Overview

W949D6DBHX5E TR from Winbond is a 512Mb mobile LPDDR SDRAM with x16 data bus, 60-ball VFBGA package, 200MHz clock rate (CL=2/3), and 1.8V VDD/VDDQ supply. It implements four internal banks, burst lengths of 2/4/8/16, and low-power modes including Deep Power Down and Automatic Temperature Compensated Self Refresh - deployed in battery-constrained mobile application processors and embedded SoCs.

For engineers reviewing the W949D6DBHX5E TR datasheet, W949D6DBHX5E TR pinout, W949D6DBHX5E TR application, or W949D6DBHX5E TR equivalent, key selection criteria include its -25°C to +85°C extended temperature range, LPDDR-specific ball assignment (e.g., UDQS/LDQS, UDM/LDM), PASR support for dynamic power gating, and compatibility with JEDEC LPDDR interface timing requirements.

Technical Context

This LPDDR SDRAM uses differential CK/CK inputs for command/address sampling and edge-aligned DQS strobes for read capture and center-aligned DQS for write capture. Its four-bank architecture enables bank interleaving to hide precharge latency, while programmable mode registers configure burst type (sequential/interleave), CAS latency (2 or 3), and auto-precharge behavior.

Power management is implemented via synchronous CKE-controlled entry into Power Down and Deep Power Down modes, plus asynchronous Self Refresh entry/exit. The device supports Partial Array Self Refresh (PASR) to refresh only active subarrays and Automatic Temperature Compensated Self Refresh (ATCSR) to adjust refresh rate based on die temperature - both critical for thermal-aware mobile memory subsystems.

Key Specifications

Pinout & Package

W949D6DBHX5E TR uses a 60-ball VFBGA package optimized for LPDDR x16 interface. Ball pitch is 0.5mm; footprint complies with JEDEC MO-245AC standard. Thermal pad is not present - mechanical mounting relies on solder ball shear strength.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT47H128M16HR-25E, W949D6DBHX5E TR delivers LPDDR-native power efficiency and JEDEC-compliant command set; versus W949D6DBJX5E, it trades bandwidth for compact x16 footprint and lower routing complexity - ideal for space-constrained mobile PCBs.

Availability

W949D6DBHX5E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, IoT edge AI accelerators, and industrial HMI controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W949D6DBHX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

W949D6DBHX5E TR belongs to Winbond's LPDDR SDRAM product line, designed specifically for power-sensitive portable devices requiring high bandwidth, JEDEC-compliant LPDDR interface support, and advanced thermal-aware refresh management.

FAQ

What is the maximum clock frequency supported by W949D6DBHX5E TR?

W949D6DBHX5E TR supports a maximum clock frequency of 200MHz, corresponding to a 5ns clock period. This rating is specified under VDD/VDDQ = 1.8V ±5% and extended temperature conditions (-25°C to +85°C). At this speed, the device achieves a peak data rate of 3.2GB/s using its x16 interface and double-data-rate architecture. The -5 suffix in ordering nomenclature confirms this 200MHz grade.

Does W949D6DBHX5E TR support true LPDDR command protocols like Clock Stop and Deep Power Down?

Yes, W949D6DBHX5E TR fully implements JEDEC LPDDR-specific command protocols. It supports Clock Stop mode to halt CK/CK activity during idle periods, Deep Power Down (DPD) mode reducing current to ≤10μA, and asynchronous Self Refresh entry/exit. These features are validated in the official datasheet sections 8.14, 8.13, and 8.11 respectively - distinguishing it from standard DDR2/DDR3 parts.

How does Partial Array Self Refresh (PASR) function in W949D6DBHX5E TR?

In W949D6DBHX5E TR, PASR is configured via Extended Mode Register bits to refresh only a subset of the 4-bank array - options include refresh of 1/2/1/4 of total memory. This reduces self-refresh current proportionally, e.g., refreshing half the array cuts IDD6 by ~50%. PASR is particularly effective in applications where only portions of memory remain active between sleep cycles, such as camera preview buffers.

What are the key differences between W949D6DBHX5E TR and W949D6DBHX5I?

W949D6DBHX5E TR and W949D6DBHX5I share identical electrical specifications, timing, and package (60-ball VFBGA x16), but differ in temperature grade: W949D6DBHX5E TR is rated for -25°C to +85°C (extended), while W949D6DBHX5I supports -40°C to +85°C (industrial). The latter undergoes additional screening for wider thermal margin and is typically used in automotive or outdoor industrial deployments.

Can W949D6DBHX5E TR be used as a drop-in replacement for standard DDR2 SDRAMs?

No, W949D6DBHX5E TR is not compatible with standard DDR2 SDRAMs. It implements the LPDDR command protocol (e.g., CKE-driven Power Down, Clock Stop, PASR), uses differential CK/CK inputs, and requires LVCMOS-level signaling - none of which align with DDR2's single-ended clock, fixed VDD/VDDQ separation, or command encoding. Hardware and firmware redesign is required for migration.