Winbond Electronics Corporation W949D6DBHX5I TR

Overview

W949D6DBHX5I TR from Winbond is a 512Mb mobile LPDDR SDRAM (x16) operating at 200MHz with 1.8V VDD/VDDQ supply, CAS latency of 2 or 3, and 4 internal banks - used as main memory in space-constrained portable SoC platforms including smartphones and wearables.

For engineers reviewing the W949D6DBHX5I TR datasheet, W949D6DBHX5I TR pinout, W949D6DBHX5I TR application, or W949D6DBHX5I TR equivalent, key selection criteria include its 60-ball VFBGA package, PASR/ATCSR low-power modes, differential CK/CK clock interface, and support for burst lengths of 2/4/8/16 in sequential or interleave configuration.

Technical Context

This LPDDR SDRAM implements a 4-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. It supports programmable mode registers for burst length, CAS latency, and burst type, plus extended mode registers for Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR).

Command decoding relies on synchronous sampling of CS, RAS, CAS, and WE relative to differential CK/CK edges; data I/O uses bidirectional DQS-strobed x16 bus with UDM/LDM masking. Power management includes Power Down, Deep Power Down, and Clock Stop modes - all entered via CKE control and validated for -40°C to +85°C industrial operation.

Key Specifications

Pinout & Package

W949D6DBHX5I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for mobile PCB stacking and thermal dissipation. Ball pitch is 0.5mm; package height is 0.6mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT46H32M16LFCK-6 IT:F and K4P4G324EC-AC10, W949D6DBHX5I TR uniquely delivers full 512Mb density in a compact 60-ball package with industrial temperature support and advanced low-power features (PASR/ATCSR) - making it optimal for next-generation ultra-thin portable designs where space, power, and thermal margin are constrained.

Availability

W949D6DBHX5I TR is available at Aetrix Electronics and suitable for smartphone application processors, industrial handheld terminals, wearable fitness trackers, medical sensor hubs, and other portable electronics requiring stable component supply with long-term lifecycle assurance.

Supply support for W949D6DBHX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

The W949D6DB series belongs to Winbond's mobile LPDDR2 SDRAM product line, designed specifically for battery-powered portable devices demanding high bandwidth, minimal footprint, and aggressive power-state optimization.

FAQ

What is the exact memory organization of W949D6DBHX5I TR?

W949D6DBHX5I TR is organized as 64M words × 16 bits (512Mb total), with 4 independently addressable banks. Each bank contains 16K rows and 1K columns for x16 configuration. Row addresses use A0–A12; column addresses use A0–A9. This structure enables concurrent bank operations and efficient burst access patterns essential for mobile SoC memory subsystems.

Does W949D6DBHX5I TR support both sequential and interleave burst types?

Yes, W949D6DBHX5I TR supports both sequential and interleave burst types, selectable via bit A3 in the Mode Register. Sequential mode accesses column addresses in linear order (e.g., 0,1,2,3); interleave mode uses XOR-based addressing (e.g., 0,8,4,12 for BL=4). This flexibility allows optimization for different access patterns - sequential for streaming media, interleave for cache-line fills.

What are the valid CAS latency settings for W949D6DBHX5I TR?

W949D6DBHX5I TR supports CAS latency (CL) values of 2 and 3, programmed via bits A4–A6 in the Mode Register. CL=2 enables minimum read latency at 200MHz operation; CL=3 provides timing margin for marginal signal integrity or higher-temperature operation. Both are fully compliant with JEDEC LPDDR2 specification timing requirements.

How does the Deep Power Down mode function in W949D6DBHX5I TR?

In Deep Power Down mode, W949D6DBHX5I TR disables all internal clocks, terminates refresh, and powers down core circuitry - reducing current draw to <10μA typical. Entry requires CKE LOW + specific command sequence; exit requires CKE HIGH followed by tXPDLP delay before issuing PRECHARGE ALL. This mode is ideal for extended idle periods in battery-operated devices.

Is W949D6DBHX5I TR pin-compatible with other Winbond LPDDR2 parts like W949D2DBJX5I?

No, W949D6DBHX5I TR is not pin-compatible with W949D2DBJX5I. W949D6DBHX5I TR uses a 60-ball VFBGA for x16 interface, while W949D2DBJX5I uses a 90-ball VFBGA for x32 interface. Ball count, layout, and signal assignments differ significantly - requiring separate PCB footprints and routing strategies.