Winbond Electronics Corporation W94AD2KBJX5E TR

Overview

W94AD2KBJX5E TR from Winbond is a 1Gb mobile LPDDR SDRAM with x32 data width, 200MHz clock rate (CL=3), 1.8V VDD/VDDQ supply, and 90-ball VFBGA package rated for -25°C to +85°C operation. It delivers burst lengths of 2/4/8/16, supports PASR and ATCSR for dynamic power management, and serves as main memory in space-constrained portable SoC platforms.

For engineers reviewing the W94AD2KBJX5E TR datasheet, W94AD2KBJX5E TR pinout, W94AD2KBJX5E TR application, or W94AD2KBJX5E TR equivalent, this page provides verified electrical specs, ball assignment mapping, low-power mode behavior, timing-critical initialization sequence, and validated alternative parts for mobile memory design continuity.

Technical Context

This LPDDR SDRAM implements four independent internal banks with bank-select addressing (BA0/BA1), differential clock inputs (CK/CK̄), and bidirectional DQS strobes per 8-bit nibble (DQS0–DQS3). It executes burst-oriented random-access reads/writes with programmable CAS latency (2 or 3) and supports auto-precharge, partial array self-refresh (PASR), and automatic temperature-compensated self-refresh (ATCSR).

Initialization requires strict sequencing: stable VDD/VDDQ with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands separated by tRFC, then Mode Register and Extended Mode Register programming with tMRD delays. The device enters Deep Power Down (DPD) mode via DPDS command and exits asynchronously using DPDSX.

Key Specifications

Pinout & Package

90-ball VFBGA package (8 mm × 12 mm × 0.6 mm) with 0.5 mm ball pitch. Ball assignments follow JEDEC LPDDR x32 layout: address/control on inner rows (A0–A12, BA0/BA1, CS, RAS, CAS, WE, CKE, CK/CK̄), data/DQS/DM on outer perimeter, and dedicated VDD/VDDQ/VSS/VSSQ balls distributed for noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W94AD2KBJX5E TR, MT46H128M32LF-6 IT:C trades 34MHz bandwidth for broader temperature tolerance, while IS42S32160F-6BLI reduces package size but removes ATCSR - requiring external thermal compensation logic in the host SoC.

Availability

W94AD2KBJX5E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, portable medical imaging displays, and industrial handheld terminal RAM requiring stable component supply across production lifecycles.

Supply support for W94AD2KBJX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO 9001-certified manufacturing.

The W94ADxKB family targets mobile and portable electronics, delivering low-voltage, low-power LPDDR SDRAM optimized for battery life, thermal efficiency, and compact PCB integration in space-constrained SoC platforms.

FAQ

What is the exact memory organization of the W94AD2KBJX5E TR?

The W94AD2KBJX5E TR is organized as 128 M words × 32 bits (1 Gb total), with four internal banks. Row addresses use A0–A12 (13 bits), column addresses use A0–A9 (10 bits), and bank selection uses BA0/BA1. This structure enables efficient interleaving and high bandwidth utilization in mobile SoC memory controllers.

Does the W94AD2KBJX5E TR support both sequential and interleave burst types?

Yes, the W94AD2KBJX5E TR supports both sequential and interleave burst types, configured via bit A3 in the Mode Register. Sequential mode accesses consecutive column addresses within a row, while interleave mode alternates between lower and upper halves - critical for optimizing cache line fills in ARM Cortex-A series processors.

How does the Partial Array Self Refresh (PASR) feature function in the W94AD2KBJX5E TR?

In the W94AD2KBJX5E TR, PASR allows the host controller to specify which memory sub-arrays remain active during self-refresh via Extended Mode Register bits. Only those sub-arrays are refreshed, reducing current draw by up to 50% compared to full-array refresh - essential for extending standby time in always-on mobile devices.

What is the required initialization sequence before issuing valid commands to the W94AD2KBJX5E TR?

The W94AD2KBJX5E TR requires an 11-step initialization: (1) ramp VDD/VDDQ with CKE high, (2) apply stable clock, (3) wait ≥200μs with NOP/DESELECT, (4) PRECHARGE ALL, (5) wait tRP, (6) issue two AUTO REFRESH commands each followed by tRFC delay, (7) program Mode Register, (8) wait tMRD, (9) program Extended Mode Register, (10) wait tMRD, (11) device ready. Skipping any step risks undefined behavior.

Can the W94AD2KBJX5E TR operate with a 1.7V supply voltage?

No, the W94AD2KBJX5E TR is specified for 1.8V ± 5% (1.71V to 1.89V) operation per its order information and DC characteristics table. While 1.7V falls within the absolute maximum rating limit, it violates the recommended operating condition and may cause timing violations, data corruption, or failure to enter Deep Power Down mode reliably.