Winbond Electronics Corporation W94AD2KBJX5I
- Part No.:
- W94AD2KBJX5I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W94AD2KBJX5I.pdf
- Description:
- IC DRAM 1GBIT 90-VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W94AD2KBJX5I from Winbond is a 1Gb mobile LPDDR SDRAM with x32 data bus, 200MHz clock rate, 1.8V VDD/VDDQ supply, and 90-ball VFBGA package rated for -40°C to +85°C industrial operation. It implements four internal banks, CAS latency of 2 or 3, burst lengths of 2/4/8/16, and supports partial array self-refresh (PASR) and automatic temperature-compensated self-refresh (ATCSR) for low-power mobile applications.
For engineers reviewing the W94AD2KBJX5I datasheet, W94AD2KBJX5I pinout, W94AD2KBJX5I application, or W94AD2KBJX5I equivalent, key selection criteria include its x32 interface width, industrial temperature range, deep power-down mode, programmable output drive strength, and differential clock input compatibility with LPDDR controller timing requirements.
Technical Context
The W94AD2KBJX5I uses a synchronous double-data-rate architecture with differential CK/CK inputs and bidirectional DQS strobes per byte lane (DQS0–DQS3). Its command decoder interprets CS, RAS, CAS, and WE in conjunction with BA0/BA1 bank select and A[12:0] row/column addresses to manage active, read, write, precharge, auto-refresh, and self-refresh states across four independent banks.
Initialization requires strict sequencing: stable VDD/VDDQ with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports clock stop, power-down, and deep power-down modes - all entered synchronously via CKE control and command state transitions defined in its simplified state diagram.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128MB), organized as 4 banks × 8,192 rows × 1,024 columns × 32 bits |
| Data Width | x32 I/O interface with four DQS groups (DQS0–DQS3) and four DM signals (DM0–DM3) |
| Clock Rate | 200MHz (tCK = 5ns), supporting up to 400MT/s data transfer rate |
| CAS Latency | Programmable CL = 2 or 3 cycles; determines minimum read access delay after column address assertion |
| Burst Length | Configurable 2, 4, 8, or 16; defines number of consecutive data transfers per READ/WRITE command |
| Refresh Interval | 64ms refresh period; tREFI = 7.8μs for 1Gb density, requiring 8,192 refresh commands per interval |
| Operating Temperature | -40°C to +85°C industrial grade; validated for sustained operation under thermal stress in portable systems |
Pinout & Package
W94AD2KBJX5I uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 10.5mm × 13.0mm × 0.6mm (JEDEC MO-245AC), optimized for space-constrained mobile PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[12:0] | Address Input | Row/column address bus; A10 functions as Auto Precharge enable during READ/WRITE |
| BA0, BA1 | Bank Select | Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands |
| DQ[31:0] | Data I/O | 32-bit bidirectional data bus; grouped into four 8-bit lanes each with dedicated DQS and DM |
| DQS0–DQS3 | Data Strobe | Bidirectional strobes aligned with respective DQ[7:0], DQ[15:8], DQ[23:16], DQ[31:24] for timing capture |
| DM0–DM3 | Data Mask | Input-only mask signals sampling on both DQS edges; enables byte-level write masking per lane |
| CK, CK | Differential Clock | LVCMOS-compatible differential inputs; all commands and data sampled at CK/CK crossing |
| CKE | Clock Enable | Synchronous control for entering/exiting power-down, self-refresh, and deep power-down modes |
| CS, RAS, CAS, WE | Command Inputs | Standard LPDDR command bus; decoded with BA0/BA1 to generate internal control signals |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces refresh current by limiting self-refresh to active memory sub-arrays, cutting standby power in partial-use scenarios |
| Automatic Temperature Compensated Self-Refresh (ATCSR) | Adjusts refresh rate dynamically based on die temperature, maintaining data retention while minimizing unnecessary refresh cycles |
| Deep Power Down (DPD) Mode | Shuts down internal logic and I/O buffers completely, achieving ultra-low leakage current (<10μA) during extended idle periods |
| Programmable Output Drive Strength | Allows tuning of DQ/DQS slew rate and termination to match PCB trace impedance and reduce signal integrity issues |
| Four Independent Banks | Enables bank interleaving to hide precharge and activation latency, sustaining high bandwidth during mixed read/write workloads |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: High-bandwidth memory subsystem for ARM-based application processors in 4G/LTE smartphones requiring low-latency access to OS, apps, and media buffers. IC Role / Device Role / Timing Role: Primary LPDDR working memory interfaced directly to SoC memory controller using x32 bus and differential clocking. Use Value: 400MT/s effective bandwidth and PASR support extend battery life during background app synchronization and push notification handling. | Use Scenario: Dedicated graphics memory for Mali or PowerVR GPUs in Android tablets rendering UI, video playback, and 2D/3D acceleration. IC Role / Device Role / Timing Role: Frame buffer and texture cache with burst-length-16 sequential reads optimized for pixel block transfers. Use Value: Four-bank architecture enables concurrent rendering and display refresh without bandwidth contention, sustaining >30fps at 1200×800 resolution. |
| Industrial Handheld Terminal RAM | Automotive Infotainment System Memory |
Use Scenario: Main system memory in ruggedized barcode scanners and field service terminals operating continuously in wide-temperature environments. IC Role / Device Role / Timing Role: Industrial-grade LPDDR SDRAM providing reliable boot-time initialization and sustained operation from -40°C to +85°C. Use Value: ATCSR ensures data retention across thermal cycling in unheated warehouses or outdoor deployments without firmware intervention. | Use Scenario: Application memory for QNX- or Android-based head units managing navigation, voice recognition, and Bluetooth audio streaming. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by CPU, DSP, and GPU subsystems via coherent interconnect. Use Value: Deep power-down mode reduces quiescent current during vehicle ignition-off periods, preventing battery drain over multi-day parking intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H128M32LF-6 IT | Same 1Gb x32 LPDDR, but rated for -40°C to +85°C with 166MHz max clock (CL=2.5); different ball map and timing parameters | Lower peak bandwidth (333MT/s vs 400MT/s); requires controller reconfiguration for tRFC and tRP | Choose when system clock budget is constrained to ≤166MHz and board layout accommodates Micron's 90-ball VFBGA footprint |
| K4P4G324EC-BCF7 | 1Gb x32 LPDDR2 (not LPDDR), 266MHz, 1.2V core, -30°C to +85°C; incompatible voltage and signaling | Not pin- or protocol-compatible; requires full controller redesign and PCB revision due to different VDDQ, CK duty cycle, and command encoding | Consider only for brownfield LPDDR2 designs where migration to LPDDR is not feasible; not a drop-in replacement for W94AD2KBJX5I |
Compared with MT46H128M32LF-6 IT and K4P4G324EC-BCF7, the W94AD2KBJX5I delivers higher bandwidth at 200MHz while maintaining industrial temperature compliance and LPDDR-specific low-power features like PASR and ATCSR - making it optimal for new mobile and embedded designs targeting 400MT/s performance within tight thermal envelopes.
Availability
W94AD2KBJX5I is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, industrial handheld terminal RAM, and automotive infotainment system memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W94AD2KBJX5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, SLCD RAM, and mobile DRAM products.
The W94AD2KB series belongs to Winbond's LPDDR SDRAM product line, designed specifically for battery-powered portable devices requiring high bandwidth, low active power, and advanced self-refresh intelligence for extended runtime.
FAQ
What is the maximum data rate supported by W94AD2KBJX5I?
The W94AD2KBJX5I supports a maximum clock frequency of 200MHz, enabling a data transfer rate of 400MT/s (megatransfers per second) due to its double-data-rate architecture. This is confirmed in the order information table and electrical characteristics section of the official datasheet, where the "-5" speed grade denotes 200MHz operation. The W94AD2KBJX5I achieves this rate using differential CK/CK inputs and edge-aligned DQS strobes for precise timing capture.
Does W94AD2KBJX5I support both sequential and interleaved burst types?
Yes, the W94AD2KBJX5I supports both sequential and interleaved burst types, selectable via bit A3 in the Mode Register. When A3 = 0, bursts proceed in linear address order; when A3 = 1, they follow an interleaved pattern that improves cache-line efficiency for certain access patterns. This capability is documented in Section 7.3.4 of the datasheet and applies identically to all burst lengths (2, 4, 8, 16) supported by the W94AD2KBJX5I.
What is the ball count and package type of W94AD2KBJX5I?
The W94AD2KBJX5I uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, as specified in the Order Information table and detailed in Section 4.2 of the datasheet. This package measures 10.5mm × 13.0mm × 0.6mm (JEDEC MO-245AC) and is distinct from the 60-ball VFBGA used for the x16 variants like W94AD6KBHX5I. The 90-ball configuration accommodates the full x32 data bus, four DQS lines, four DM signals, and expanded address/control routing required by the W94AD2KBJX5I.
How does Partial Array Self-Refresh (PASR) function in W94AD2KBJX5I?
In the W94AD2KBJX5I, Partial Array Self-Refresh (PASR) allows the device to refresh only selected sub-arrays instead of the entire 1Gb memory space during self-refresh mode. This feature is configured via the Extended Mode Register and reduces refresh current proportionally - for example, refreshing half the array cuts self-refresh power by ~50%. PASR is particularly valuable in mobile applications where memory usage is sparse, such as background app maintenance or sensor buffering, and is explicitly listed in the Features section as a key low-power capability of the W94AD2KBJX5I.
Is W94AD2KBJX5I compatible with standard LPDDR controllers?
Yes, the W94AD2KBJX5I complies fully with the JEDEC LPDDR (Low Power DDR SDRAM) standard JESD209, supporting all mandatory commands (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, SELF REFRESH), timing parameters, and electrical specifications required for interoperability. Its command encoding, burst behavior, and initialization sequence align with industry-standard LPDDR controllers found in Qualcomm Snapdragon, MediaTek Helio, and NXP i.MX application processors - confirming functional compatibility when configured for x32 width and 200MHz operation in the W94AD2KBJX5I.
W94AD2KBJX5I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- -
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W94AD2KBJX5I FAQ
1.How can I place an order for W94AD2KBJX5I through Aetrix?
Please submit a Request for Quotation (RFQ) for W94AD2KBJX5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W94AD2KBJX5I reliable?
The price and inventory of W94AD2KBJX5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W94AD2KBJX5I is usually 5 days.
3.What payment methods are accepted for W94AD2KBJX5I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W94AD2KBJX5I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W94AD2KBJX5I?
W94AD2KBJX5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W94AD2KBJX5I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W94AD2KBJX5I?
For technical support, including W94AD2KBJX5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W94AD2KBJX5I requirements.
6.How does Aetrix verify that W94AD2KBJX5I is sourced from the original manufacturer or authorized distributors?
All W94AD2KBJX5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W94AD2KBJX5I meets industry standards.
7.What is the process for return or replacement of W94AD2KBJX5I?
All W94AD2KBJX5I units undergo pre-shipment inspection (PSI). If there is an issue with W94AD2KBJX5I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W94AD2KBJX5I part is unused and in its original packaging.
Return procedure for W94AD2KBJX5I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W94AD2KBJX5I Tags

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