Winbond Electronics Corporation W94AD6KBHX5E

Overview

W94AD6KBHX5E from Winbond is a 1Gb mobile LPDDR SDRAM (x16) operating at 200MHz with 1.8V VDD/VDDQ supply, CAS latency 2–3, and 4-bank architecture. It supports burst lengths of 2/4/8/16, sequential or interleave burst types, and low-power modes including Deep Power Down, Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR). It targets memory subsystems in portable consumer electronics requiring high bandwidth and ultra-low standby power.

For engineers reviewing the W94AD6KBHX5E datasheet, W94AD6KBHX5E pinout, W94AD6KBHX5E application, or W94AD6KBHX5E equivalent, key selection criteria include its 60-ball VFBGA package, -25°C to +85°C extended temperature range, LPDDR x16 interface timing compliance, and support for programmable output drive strength and clock stop during idle periods.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate interface with differential CK/CK inputs, bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible signaling. Its four independent banks enable bank interleaving to hide precharge latency, while internal address counters automate column sequencing during burst reads/writes.

Initialization requires strict sequencing: stable power with CKE high, ≥200µs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports both auto- and manual precharge, data masking (UDM/LDM), and status register read (SRR) for real-time monitoring of self-refresh state and temperature compensation status.

Key Specifications

Pinout & Package

W94AD6KBHX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 8 mm × 0.6 mm, optimized for space-constrained mobile PCB layouts. Ball pitch is 0.5 mm, and solder mask defined (SMD) pads ensure reliable reflow attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W94AD6KBHX5E, MT46H128M16LFCK-6 IT offers broader temperature tolerance but omits ATCSR and PASR, while IS42S16160J-6BLI matches clock speed but lacks deep sleep modes and has incompatible signal mapping - making W94AD6KBHX5E the optimal choice for thermally adaptive, battery-sensitive designs.

Availability

W94AD6KBHX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, IoT edge AI inference buffers, and portable medical device data logging requiring stable component supply across production lifecycles.

Supply support for W94AD6KBHX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, SLCD DRAM, and mobile LPDDR products for consumer and industrial markets.

The W94AD6KB series belongs to Winbond's low-power mobile DRAM product line, designed specifically for battery-operated devices demanding high bandwidth, minimal standby current, and robust thermal resilience in compact form factors.

FAQ

What is the operating voltage range for W94AD6KBHX5E?

W94AD6KBHX5E operates with VDD and VDDQ both at 1.8 V ± 0.15 V (1.65 V to 1.95 V). This tight dual-rail specification ensures signal integrity and low-power operation. The device requires simultaneous ramp-up of both supplies during power-on to prevent latch-up, and VDDQ must remain within ±3% of VDD during active operation. W94AD6KBHX5E does not support split-rail or variable-voltage operation outside this range.

Does W94AD6KBHX5E support CAS latency of 2 and 3?

Yes, W94AD6KBHX5E supports both CAS latency 2 and CAS latency 3, selectable via bits A4–A6 in the Mode Register. CL=2 is used for highest-performance timing at 200 MHz, while CL=3 provides additional setup margin in electrically noisy or thermally stressed environments. The W94AD6KBHX5E datasheet specifies tAC (output access time) as 0.55 ns for CL=2 and 0.75 ns for CL=3, directly impacting CPU wait-state configuration.

What low-power modes are implemented in W94AD6KBHX5E?

W94AD6KBHX5E implements five hardware-controlled low-power states: Power Down (CKE-driven), Deep Power Down (DPD), Clock Stop, Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR). Each mode reduces IDD to defined levels - DPD achieves ≤10 µA, while ATCSR dynamically adjusts refresh rate from 32 ms to 128 ms based on die temperature. These modes are configured via EMRS and activated using standard LPDDR command sequences.

Is W94AD6KBHX5E pin-compatible with other Winbond LPDDR parts?

W94AD6KBHX5E shares the same 60-ball VFBGA package and ball assignment as W94AD6KBHX5I and W94AD6KBHX6E/X6I, enabling drop-in replacement within the W94AD6KB family for same-speed and temperature-grade variants. However, it is not pin-compatible with x32 variants (e.g., W94AD2KBJX5E) or other manufacturers' LPDDR SDRAMs due to differences in DQS/DM placement, CK/CK routing, and bank address mapping - verified against Winbond's official ball configuration diagrams.

What is the maximum supported burst length for W94AD6KBHX5E?

W94AD6KBHX5E supports burst lengths of 2, 4, 8, and 16, configured via bits A0–A2 in the Mode Register. Burst Type (sequential or interleave) is set independently via bit A3. All burst lengths operate at full 200 MHz clock rate with CL=2 or CL=3. The device automatically increments internal column addresses during burst transfers, eliminating need for external address generation - a key feature confirmed in Section 7.3.1 of the W94AD6KBHX5E datasheet.