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Winbond Electronics Corporation W94AD6KBHX5E TR
- Part No.:
- W94AD6KBHX5E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W94AD6KBHX5E TR.pdf
- Description:
- IC DRAM 1GBIT 60-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,674
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Product details
Overview
W94AD6KBHX5E TR from Winbond is a 1Gb mobile LPDDR SDRAM (x16) operating at 200MHz with 1.8V VDD/VDDQ supply, CAS latency of 2 or 3, and 64ms refresh period. It features four internal banks, burst lengths of 2/4/8/16, sequential or interleave burst type, and supports Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR) for low-power mobile applications including smartphones and tablets.
For engineers reviewing the W94AD6KBHX5E TR datasheet, W94AD6KBHX5E TR pinout, W94AD6KBHX5E TR application, or W94AD6KBHX5E TR equivalent, this page delivers verified electrical specs, ball assignment for 60-ball VFBGA, low-power mode behavior, timing constraints for read/write/precharge sequences, and validated alternative LPDDR parts with functional and packaging distinctions.
Technical Context
This LPDDR SDRAM implements differential clock inputs (CK/CK̄), bidirectional data strobes (UDQS/LDQS), and programmable output drive strength to support high-speed signal integrity in space-constrained mobile PCBs. Its command decoder interprets CS, RAS, CAS, WE, and CKE in conjunction with BA0/BA1 to manage bank activation, read/write bursts, auto-precharge, and power-state transitions.
The device uses an internal refresh counter and supports both standard auto-refresh and self-refresh modes with temperature compensation (ATCSR) and partial-array retention (PASR). Initialization requires strict sequencing: 200μs stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming before operational readiness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 4 banks × 8,192 rows × 1,024 columns × 16 bits |
| Data Width & Interface | x16 LPDDR interface with LVCMOS-compatible signaling and differential CK/CK̄ inputs |
| Clock Rate / Speed Grade | 200 MHz (–5 speed grade), tCK = 5 ns minimum cycle time |
| CAS Latency | Programmable CL = 2 or 3 cycles; determines minimum read access delay after column address |
| Burst Length & Type | Configurable 2/4/8/16; sequential or interleave addressing for efficient page access |
| Refresh Interval | 64 ms maximum average refresh period; tREFI = 7.8 μs per row activation |
| Operating Temperature | –25°C to +85°C (Extended grade); suitable for consumer handheld thermal profiles |
| Power Supplies | VDD = VDDQ = 1.8 V ± 0.15 V; separate VDDQ/VSSQ rails reduce I/O noise coupling |
Pinout & Package
W94AD6KBHX5E TR is housed in a 60-ball Very Thin Fine-Pitch Ball Grid Array (60VFBGA) package, 8 mm × 10.5 mm × 0.6 mm, compliant with JEDEC MO-245. Ball pitch is 0.5 mm. The x16 configuration uses dedicated DQ[15:0], UDQS/LDQS, UDM/LDM, and dual-rail power/ground distribution optimized for mobile DDR layout density.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[13:0] | Address Input | Row address (A0–A13) for ACTIVE; column address (A0–A9) + A10/AP for READ/WRITE with auto-precharge control |
| BA[1:0] | Bank Address | Selects one of four internal banks for concurrent operation and interleaving |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers synchronized to DQS edges |
| UDQS / LDQS | Data Strobe | Upper/lower byte strobes: edge-aligned on read, center-aligned on write for timing margin |
| UDM / LDM | Data Mask | Input mask for DQ[15:8] (UDM) and DQ[7:0] (LDM); sampled on both DQS edges during WRITE |
| CK / CK̄ | Differential Clock | Reference for all command/address sampling and data capture; defines tCK and setup/hold windows |
| CKE | Clock Enable | Synchronous control for power-down, self-refresh entry/exit, and active clock gating |
| CS, RAS, CAS, WE | Command Inputs | Encoded command set (e.g., ACTIVE, READ, WRITE, PRECHARGE) with CS enabling decoder |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active sub-arrays, extending battery life in idle states |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh rate dynamically with junction temperature to maintain data retention while minimizing power |
| Deep Power Down (DPD) Mode | Lowest standby current state (<10 µA typical); exits via CKE pulse without full re-initialization |
| Programmable Output Drive Strength | Configurable via Extended Mode Register to match trace impedance and reduce signal overshoot/undershoot |
| Auto Precharge Option | Enables automatic bank precharge after each burst access using A10/AP, simplifying controller logic |
| CLK Stop Capability | Allows system to halt CK/CK̄ during idle periods without losing state; resumes operation on clock restart |
Applications
| Smartphone Application | Tablet System Memory |
|---|---|
|
Use Scenario: Main memory in mid-tier Android smartphones with ARM Cortex-A series SoCs requiring balanced bandwidth and ultra-low standby power. IC Role / Device Role / Timing Role: x16 LPDDR interface directly connected to application processor memory controller; handles burst reads/writes with CL=3 and 200MHz clock. Use Value: PASR and ATCSR cut self-refresh current by up to 40% vs. standard LPDDR, extending video playback time between charges. |
Use Scenario: Primary DRAM in 7–10 inch tablets supporting HD UI rendering, multi-app backgrounding, and media decoding. IC Role / Device Role / Timing Role: 1Gb density provides sufficient working memory for Android/Linux OS; 4-bank architecture enables interleaved access to hide precharge latency. Use Value: Deep Power Down mode reduces system-wide quiescent current to <15 µA during suspend-to-RAM, meeting Energy Star requirements. |
| Wearable Display Buffer | IoT Edge Gateway Cache |
|
Use Scenario: Frame buffer for always-on OLED displays in smartwatches, where display updates occur infrequently but must be instantaneous. IC Role / Device Role / Timing Role: Stores rendered UI frames; leverages CLK stop and auto-precharge to minimize wake latency when new content arrives. Use Value: Clock stop capability eliminates dynamic power during static display periods without sacrificing resume speed (<100 ns exit time). |
Use Scenario: Local cache memory in industrial IoT gateways running real-time Linux, buffering sensor aggregation and protocol translation tasks. IC Role / Device Role / Timing Role: Acts as low-latency scratchpad for edge inference preprocessing; operates in extended temperature range (–25°C to +85°C). Use Value: Extended temp rating ensures reliable operation inside sealed enclosures without active cooling, avoiding thermal derating penalties. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H128M16LFCK-6 IT:F | 1Gb LPDDR2 x16, 166MHz max, CL=2/3, 60-ball VFBGA, VDD/VDDQ = 1.8V | Lacks PASR, ATCSR, and Deep Power Down; supports only standard self-refresh | Choose for cost-sensitive designs where advanced low-power modes are unused and legacy LPDDR2 compatibility is required. |
| W94AD6KBHX6E TR | Same die, 166MHz speed grade (–6), identical 60VFBGA package and –25°C to +85°C rating | Lower maximum clock frequency reduces peak bandwidth but improves timing margin and power efficiency at 166MHz | Choose when system clock tree cannot guarantee stable 200MHz operation or when lower IDD active current is prioritized over bandwidth. |
Compared with W94AD6KBHX5E TR, MT46H128M16LFCK-6 IT:F offers no power optimization beyond basic self-refresh, while W94AD6KBHX6E TR trades 34MHz bandwidth for relaxed timing closure and reduced dynamic power - both share pinout and initialization flow but differ in low-power feature depth and speed ceiling.
Availability
W94AD6KBHX5E TR is available at Aetrix Electronics and suitable for smartphone main memory, tablet system RAM, wearable display buffers, and IoT edge gateway caching requiring stable component supply across production lifecycles.
Supply support for W94AD6KBHX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
W94AD6KBHX5E TR belongs to Winbond's LPDDR SDRAM product line, designed specifically for battery-powered portable devices demanding high bandwidth, minimal standby current, and robust thermal performance in compact form factors.
FAQ
What is the ball count and package type of W94AD6KBHX5E TR?
W94AD6KBHX5E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (60VFBGA) package measuring 8 mm × 10.5 mm × 0.6 mm with 0.5 mm pitch. This x16 LPDDR configuration matches the physical layout defined in Section 4.1 of the official Winbond datasheet, and is distinct from the 90-ball VFBGA used for x32 variants like W94AD2KB.
Does W94AD6KBHX5E TR support CAS latency of 2 and 3?
Yes, W94AD6KBHX5E TR supports programmable CAS latency of CL = 2 or CL = 3, configured via bits A4–A6 in the Mode Register. The –5 speed grade (200MHz) guarantees CL = 3 operation; CL = 2 is supported under tighter timing conditions and is validated in the AC characteristics table of the datasheet for this specific part number.
How does Partial Array Self Refresh (PASR) function in W94AD6KBHX5E TR?
W94AD6KBHX5E TR implements PASR by allowing the memory controller to specify which banks or sub-arrays remain active during self-refresh via the Extended Mode Register. This reduces refresh current by skipping inactive portions of the array - a verified feature confirmed in Section 2 and Section 7.4.2 of the official datasheet, directly lowering standby power in asymmetric workloads.
What is the minimum initialization sequence required before W94AD6KBHX5E TR accepts commands?
W94AD6KBHX5E TR requires 11-step initialization: (1) simultaneous VDD/VDDQ ramp with CKE high, (2) stable clock application, (3) ≥200μs NOP/DESELECT, (4) PRECHARGE ALL, (5) ≥tRP NOP/DESELECT, (6) two AUTO REFRESH commands each followed by ≥tRFC delay, (7) Mode Register Set, (8) ≥tMRD delay, (9) Extended Mode Register Set, (10) ≥tMRD delay, (11) ready for valid commands - all specified in Section 7.1.
Is W94AD6KBHX5E TR compatible with LPDDR2 controllers?
No, W94AD6KBHX5E TR is an LPDDR (Low Power DDR, also known as LPDDR1) device, not LPDDR2. It lacks LPDDR2-specific features such as DLL-off mode, enhanced power-down states, and different command encoding. Controllers must implement LPDDR1 timing, command set, and initialization per JEDEC JESD209, as confirmed in Sections 1 and 7 of the W94AD6KB datasheet.
W94AD6KBHX5E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- -
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W94AD6KBHX5E TR FAQ
1.How can I place an order for W94AD6KBHX5E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W94AD6KBHX5E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W94AD6KBHX5E TR reliable?
The price and inventory of W94AD6KBHX5E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W94AD6KBHX5E TR is usually 5 days.
3.What payment methods are accepted for W94AD6KBHX5E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W94AD6KBHX5E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W94AD6KBHX5E TR?
W94AD6KBHX5E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W94AD6KBHX5E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W94AD6KBHX5E TR?
For technical support, including W94AD6KBHX5E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W94AD6KBHX5E TR requirements.
6.How does Aetrix verify that W94AD6KBHX5E TR is sourced from the original manufacturer or authorized distributors?
All W94AD6KBHX5E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W94AD6KBHX5E TR meets industry standards.
7.What is the process for return or replacement of W94AD6KBHX5E TR?
All W94AD6KBHX5E TR units undergo pre-shipment inspection (PSI). If there is an issue with W94AD6KBHX5E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W94AD6KBHX5E TR part is unused and in its original packaging.
Return procedure for W94AD6KBHX5E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W94AD6KBHX5E TR Tags
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M24C02-WMN6TP
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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