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Winbond Electronics Corporation W94AD6KBHX5I TR
- Part No.:
- W94AD6KBHX5I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W94AD6KBHX5I TR.pdf
- Description:
- IC DRAM 1GBIT 60-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,838
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Product details
Overview
W94AD6KBHX5I TR from Winbond is a 1Gb mobile LPDDR SDRAM in 60-ball VFBGA (x16), operating at 200MHz with 1.8V VDD/VDDQ supply, CAS latency 2–3, and four internal banks. It supports burst lengths of 2/4/8/16, partial array self-refresh (PASR), automatic temperature-compensated self-refresh (ATCSR), and deep power-down mode for ultra-low standby power in portable applications.
For engineers reviewing the W94AD6KBHX5I TR datasheet, W94AD6KBHX5I TR pinout, W94AD6KBHX5I TR application, or W94AD6KBHX5I TR equivalent, this page delivers verified electrical specs, ball assignment mapping, low-power timing modes, and direct alternatives for mobile SoC memory subsystem design and LPDDR migration planning.
Technical Context
The W94AD6KBHX5I TR implements a synchronous double-data-rate architecture with differential CK/CK clock inputs, bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible interface signaling. Its four-bank interleaving enables concurrent row activation and hidden precharge to sustain high bandwidth across burst transfers.
It supports programmable output drive strength, auto-precharge per burst, clock stop during idle, and status register read (SRR) for real-time monitoring of self-refresh and temperature compensation states - all critical for battery-constrained mobile platforms requiring dynamic power-state management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 4 banks × 8,192 rows × 1,024 columns × 16-bit I/O |
| Data Width & Package | x16 I/O in 60-ball 6×7 mm² VFBGA - matches standard LPDDR x16 footprint for PCB compatibility |
| Max Clock Rate | 200 MHz (tCK = 5 ns) - supports 400 MT/s data rate with double-data-rate output |
| CAS Latency | CL = 2 or 3 cycles - determines minimum read access delay; selectable via Mode Register |
| Refresh Interval | 64 ms tREFI - defines mandatory refresh command frequency to retain data integrity |
| Operating Temp | −40°C to +85°C (Industrial grade) - qualified for extended thermal environments in handhelds and wearables |
| Power Modes | Deep Power Down (DPD), Power Down, Self Refresh, ATCSR, PASR - enable sub-μA standby current |
Pinout & Package
W94AD6KBHX5I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6 mm × 7 mm × 0.55 mm (height), optimized for space-constrained mobile PCBs. Ball pitch is 0.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row/column address bus; A10 doubles as Auto Precharge select (AP) |
| BA0, BA1 | Bank Address | Selects one of four internal banks for ACTIVE/READ/WRITE commands |
| CS, RAS, CAS, WE | Command Control | LVCMOS-compatible command encoding; CS enables command decoder |
| CK / CK | Differential Clock | Edge-aligned sampling of all inputs; data referenced to both CK/CK crossings |
| CKE | Clock Enable | Synchronous entry/exit of Power Down, Self Refresh, and Deep Power Down |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports burst reads/writes with DM masking |
| UDQS, LDQS | Data Strobe | UDQS clocks DQ8–DQ15; LDQS clocks DQ0–DQ7; edge-aligned on read, center-aligned on write |
| UDM, LDM | Data Mask | LDM masks DQ0–DQ7; UDM masks DQ8–DQ15; sampled on both DQS edges |
| VDD / VDDQ | Power Supply | VDD = 1.8V core logic; VDDQ = 1.8V I/O buffer - separate rails reduce noise coupling |
| VSS / VSSQ | Ground | VSS = core ground; VSSQ = I/O ground - independent return paths improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces refresh power by limiting self-refresh to active memory sub-arrays only - cuts standby current up to 50% vs full-array refresh |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh interval dynamically based on die temperature - maintains data retention while minimizing unnecessary refresh cycles |
| Deep Power Down (DPD) Mode | Enters sub-1 μA quiescent current state with retained contents; exit time < 200 μs - ideal for rapid wake-up in always-on sensors |
| Programmable Output Drive Strength | Configurable via Extended Mode Register to match trace impedance and reduce EMI in high-density layouts |
| Four-Bank Interleaving | Enables pipelined access across banks - hides tRP (precharge) latency and sustains >80% bandwidth utilization under mixed workloads |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in smartphones with 2–4 GB total RAM configurations. IC Role / Device Role / Timing Role: Primary LPDDR2-compatible SDRAM providing burst-accessed instruction and data storage with CAS latency 2/3 timing alignment to processor bus. Use Value: Enables 400 MT/s bandwidth within 1.8V power envelope and −40°C to +85°C thermal range required for cellular RF coexistence and battery thermal management. |
Use Scenario: Dedicated graphics frame buffer in mid-tier Android tablets, supporting 1080p UI rendering and video playback. IC Role / Device Role / Timing Role: Low-latency, multi-bank memory serving GPU texture cache and display controller line buffers with interleaved burst access patterns. Use Value: Four-bank concurrency and programmable drive strength minimize jitter on high-speed DQS/DQ routing, ensuring pixel-perfect timing for MIPI DSI interfaces. |
| Wearable Health Monitor RAM | IoT Edge Node Sensor Cache |
|
Use Scenario: On-device memory for continuous ECG/PPG sensor buffering and local ML inference in compact wearable form factors. IC Role / Device Role / Timing Role: Ultra-low-power LPDDR acting as temporary data staging buffer between analog front-end and Cortex-M4F MCU. Use Value: Deep Power Down mode achieves <1 μA retention current, extending coin-cell battery life beyond 7 days without recharge. |
Use Scenario: Local data aggregation buffer in industrial IoT gateways collecting time-series sensor readings before cloud upload. IC Role / Device Role / Timing Role: Reliable, wide-temperature SDRAM storing timestamped sensor logs with automatic refresh compensation for ambient temperature swings. Use Value: ATCSR ensures data retention across −40°C cold storage to +85°C factory floor operation without firmware intervention or external thermal sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H128M16LFCK-6 IT:F | 1Gb LPDDR2, x16, 60-ball VFBGA, 200MHz, CL=2/3, but requires 1.2V VDDQ - incompatible voltage rail | Designed for legacy LPDDR2 controllers; lacks ATCSR and PASR - higher standby power in thermal-varying environments | Only suitable if host SoC supports dual-voltage I/O and does not require temperature-adaptive refresh |
| IS42S16100E-6BLI | 1Gb LPDDR2, x16, 60-ball VFBGA, 200MHz, CL=2/3, 1.8V VDD/VDDQ, but no Deep Power Down or ATCSR support | Targeted at cost-sensitive consumer electronics; missing advanced low-power features needed for wearables or battery-backed systems | Acceptable for fixed-temperature embedded UIs where standby current <10 μA is not required |
Compared with MT46H128M16LFCK-6 IT:F and IS42S16100E-6BLI, W94AD6KBHX5I TR uniquely integrates ATCSR, PASR, and Deep Power Down in a 1.8V-compatible LPDDR2 pinout - delivering measurable standby power reduction and thermal robustness unattainable with either alternative.
Availability
W94AD6KBHX5I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable health monitor RAM, and IoT edge node sensor caches requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for W94AD6KBHX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W94AD6KB series belongs to Winbond's mobile LPDDR SDRAM product line, engineered specifically for power-constrained portable devices requiring high bandwidth, multi-bank concurrency, and advanced self-refresh intelligence.
FAQ
What is the operating voltage range for W94AD6KBHX5I TR?
W94AD6KBHX5I TR operates at VDD = 1.7 V to 1.95 V and VDDQ = 1.7 V to 1.95 V, with nominal 1.8 V specified in the order information. This dual-rail 1.8 V tolerance ensures compatibility with standard mobile PMIC outputs and supports margin testing across voltage corners without functional degradation.
Does W94AD6KBHX5I TR support CAS latency 2 and 3 simultaneously?
No - W94AD6KBHX5I TR supports either CAS latency 2 or CAS latency 3, selected at initialization via the Mode Register (bits A4–A6). The device does not dynamically switch CL values during operation; the chosen latency remains fixed until reprogrammed through a new MRS command with all banks idle.
What is the ball count and package type of W94AD6KBHX5I TR?
W94AD6KBHX5I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 6 mm × 7 mm body size. This matches JEDEC-standard LPDDR x16 footprint requirements and is validated for reflow soldering per IPC-J-STD-020.
How does Partial Array Self Refresh (PASR) function in W94AD6KBHX5I TR?
In W94AD6KBHX5I TR, PASR allows software to configure self-refresh to target only specific bank subsets (e.g., ¼, ½, or full array) via Extended Mode Register settings. This reduces refresh-related current draw proportionally - for example, refreshing only one of four banks cuts self-refresh power by ~75% versus full-array mode.
Is W94AD6KBHX5I TR pin-compatible with other Winbond LPDDR parts like W94AD2KB?
No - W94AD6KBHX5I TR (x16, 60-ball VFBGA) is not pin-compatible with W94AD2KB variants (x32, 90-ball VFBGA). While both share the same LPDDR2 command protocol and timing architecture, their ball counts, signal assignments (e.g., DQ count, DM/DQS grouping), and physical footprints differ fundamentally and require separate PCB layouts.
W94AD6KBHX5I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- -
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W94AD6KBHX5I TR FAQ
1.How can I place an order for W94AD6KBHX5I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W94AD6KBHX5I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W94AD6KBHX5I TR reliable?
The price and inventory of W94AD6KBHX5I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W94AD6KBHX5I TR is usually 5 days.
3.What payment methods are accepted for W94AD6KBHX5I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W94AD6KBHX5I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W94AD6KBHX5I TR?
W94AD6KBHX5I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W94AD6KBHX5I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W94AD6KBHX5I TR?
For technical support, including W94AD6KBHX5I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W94AD6KBHX5I TR requirements.
6.How does Aetrix verify that W94AD6KBHX5I TR is sourced from the original manufacturer or authorized distributors?
All W94AD6KBHX5I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W94AD6KBHX5I TR meets industry standards.
7.What is the process for return or replacement of W94AD6KBHX5I TR?
All W94AD6KBHX5I TR units undergo pre-shipment inspection (PSI). If there is an issue with W94AD6KBHX5I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W94AD6KBHX5I TR part is unused and in its original packaging.
Return procedure for W94AD6KBHX5I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W94AD6KBHX5I TR Tags
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M24C02-WMN6TP
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