Winbond Electronics Corporation W94AD6KBHX6I

Overview

W94AD6KBHX6I from Winbond is a 1Gb mobile LPDDR SDRAM (x16) operating at 166MHz with 1.8V VDD/VDDQ supply, CAS latency of 2 or 3, and 4 internal banks. It supports burst lengths of 2/4/8/16, sequential or interleave burst type, and low-power modes including Deep Power Down and Partial Array Self Refresh. It is used in battery-constrained portable applications such as smartphones and tablets requiring high bandwidth and ultra-low standby power.

For engineers reviewing the W94AD6KBHX6I datasheet, W94AD6KBHX6I pinout, W94AD6KBHX6I application, or W94AD6KBHX6I equivalent, key selection considerations include its 60-ball VFBGA x16 package, industrial temperature range (–40°C to +85°C), LPDDR interface timing compliance, and compatibility with controllers supporting PASR and ATCSR for dynamic power optimization.

Technical Context

This LPDDR SDRAM implements a 4-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its command interface uses differential CK/CK̄ inputs, bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible control signals (CS, RAS, CAS, WE, CKE).

Initialization requires strict sequencing: stable power with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable output drive strength, auto-precharge, clock stop, and status register read (SRR) for real-time monitoring of self-refresh state.

Key Specifications

Pinout & Package

W94AD6KBHX6I is housed in a 60-ball VFBGA package (5.0 mm × 7.0 mm × 0.6 mm height) with 0.5 mm ball pitch. Ball assignments follow JEDEC-standard LPDDR x16 layout, with dedicated power/ground separation (VDD, VSS, VDDQ, VSSQ) and signal grouping optimized for signal integrity in high-speed mobile memory interfaces.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with W94AD6KBHX6I, MT46H128M16LFCK-6 IT offers higher speed headroom but lacks dynamic power management, while IS42S16100F-6BLI matches clock rate and package but omits ATCSR and PASR-making W94AD6KBHX6I uniquely suited for thermally variable, battery-limited deployments requiring sub-10 µA deep-sleep current.

Availability

W94AD6KBHX6I is available at Aetrix Electronics and suitable for smartphone main memory, tablet system memory, industrial handheld terminals, and medical portable monitors requiring stable component supply across long production lifecycles.

Supply support for W94AD6KBHX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W94AD6KB series belongs to Winbond's mobile LPDDR SDRAM product line, designed specifically for power-constrained portable devices demanding high bandwidth, industrial-grade reliability, and advanced dynamic power management.

FAQ

What is the exact memory organization of the W94AD6KBHX6I?

The W94AD6KBHX6I is a 1 Gb (128 M × 16) mobile LPDDR SDRAM with 4 internal banks, each containing 8,192 rows and 1,024 columns. Row addresses use A0–A13, column addresses use A0–A9, and bank selection is handled by BA0/BA1. This organization enables efficient page-mode access and bank-level concurrency in the W94AD6KBHX6I.

Does the W94AD6KBHX6I support both CAS latency 2 and 3?

Yes, the W94AD6KBHX6I supports configurable CAS latency of CL=2 or CL=3, set via bits A4–A6 in the Mode Register. CL=2 delivers lower read latency (12 ns at 166 MHz), while CL=3 provides greater timing margin for signal integrity-both are fully supported in the W94AD6KBHX6I's command protocol and AC timing specifications.

What low-power modes does the W94AD6KBHX6I implement beyond standard Self Refresh?

The W94AD6KBHX6I implements Deep Power Down (DPD), Power Down, Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR). PASR reduces refresh current by limiting refresh to active sub-arrays; ATCSR dynamically adjusts refresh rate based on die temperature-both are hardware-controlled features unique to the W94AD6KBHX6I among comparable 1 Gb LPDDR parts.

Is the W94AD6KBHX6I pin-compatible with other Winbond LPDDR parts like W94AD6KBHX5I?

Yes, the W94AD6KBHX6I shares identical 60-ball VFBGA pinout and ball assignment with W94AD6KBHX5I and other W94AD6KB x16 variants. Differences are limited to speed grade (166 MHz vs. 200 MHz) and operating temperature specification; all share identical address/control/data mapping, power pin distribution, and mode register encoding-enabling drop-in replacement in compatible layouts.

How is initialization different for the W94AD6KBHX6I compared to standard DDR SDRAM?

W94AD6KBHX6I initialization requires strict sequencing: ≥200 μs of stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH commands separated by tRFC, then Mode Register and Extended Mode Register programming. Unlike standard DDR, it mandates CKE high during power ramp and prohibits clock stop until after Step 11-this ensures correct configuration of PASR, ATCSR, and drive strength in the W94AD6KBHX6I.