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Winbond Electronics Corporation W94AD6KBHX6I TR
- Part No.:
- W94AD6KBHX6I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W94AD6KBHX6I TR.pdf
- Description:
- IC DRAM 1GBIT LVCMOS 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,166
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Product details
Overview
W94AD6KBHX6I TR from Winbond is a 1Gb mobile LPDDR SDRAM (x16) operating at 166MHz with 1.8V VDD/VDDQ supply, CAS latency of 2 or 3, and 4 internal banks. It supports burst lengths of 2/4/8/16, sequential or interleave burst type, and low-power modes including Deep Power Down and Partial Array Self Refresh - deployed in battery-constrained mobile application processors and embedded SoCs requiring high bandwidth per watt.
For engineers reviewing the W94AD6KBHX6I TR datasheet, W94AD6KBHX6I TR pinout, W94AD6KBHX6I TR application, or W94AD6KBHX6I TR equivalent, key selection criteria include its 60-ball VFBGA package, industrial temperature range (–40°C to +85°C), LPDDR x16 interface timing compliance, and support for ATCSR and PASR - critical for thermal-aware mobile memory subsystems.
Technical Context
This LPDDR SDRAM implements a four-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its differential CK/CK clock inputs synchronize all command, address, and data transfers, while bidirectional DQS strobes (UDQS/LDQS) center-align write data and edge-align read data.
Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable output drive strength, auto-precharge, and clock stop - all configurable via EMRS for dynamic power adaptation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 4 banks × 8K rows × 1K columns × 16-bit I/O |
| Data Width & Interface | x16 LPDDR interface with LVCMOS-compatible signaling and differential CK/CK inputs |
| Max Clock Rate | 166 MHz (–6 speed grade), supporting 333 MT/s data rate with double-data-rate transfers |
| CAS Latency | Programmable CL = 2 or 3 cycles; determines minimum READ-to-data-valid delay under timing constraints |
| Power Supply | VDD = VDDQ = 1.8 V ± 5%; separate VDDQ rail isolates I/O noise from core logic |
| Operating Temperature | Industrial grade: –40°C ≤ TCASE ≤ +85°C - validated for sustained operation in sealed handheld enclosures |
| Refresh Requirement | 8,192 refresh cycles per 64 ms (7.8 μs interval); supports Auto Refresh, Self Refresh, and ATCSR |
| Low-Power Modes | Deep Power Down (DPD), Power Down, Clock Stop, and Partial Array Self Refresh reduce active/idle current by >90% vs. active mode |
Pinout & Package
W94AD6KBHX6I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (60VFBGA) package, 8 mm × 10.5 mm × 0.6 mm, compliant with JEDEC MO-245. Ball pitch is 0.5 mm; solder mask defined (SMD) pads; RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Input Address | Row/column address bus; A10 doubles as Auto Precharge enable (AP) during READ/WRITE |
| BA0, BA1 | Input Bank Select | Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands |
| CS, RAS, CAS, WE | Input Command Strobes | Encoded command inputs; CS enables command decoder, RAS/CAS/WE define operation type |
| CK, CK | Differential Clock Inputs | Edge-triggered reference for all synchronous operations; internal PLL derives system clocks |
| CKE | Input Clock Enable | Asynchronous entry into Power Down, Self Refresh, or Deep Power Down when driven LOW |
| DQ0–DQ15 | I/O Data Bus | 16-bit bidirectional data path; supports burst reads/writes with DM masking (UDM/LDM) |
| UDQS, LDQS | I/O Data Strobe | Strobe pairs aligned to DQ0–DQ7 (LDQS) and DQ8–DQ15 (UDQS); used for source-synchronous capture |
| UDM, LDM | Input Data Mask | Write data masking per byte lane; sampled on both DQS edges for precise timing alignment |
| VDD, VSS | Core Power/Ground | 1.8 V core supply and return; decoupling required within 10 mm of package for noise immunity |
| VDDQ, VSSQ | I/O Power/Ground | Isolated 1.8 V I/O supply; prevents switching noise from corrupting core logic signals |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active subarrays - extends battery life in partial-workload states |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh interval dynamically with junction temperature; eliminates over-refresh at low Tj and under-refresh at high Tj |
| Programmable Output Drive Strength | Configurable via EMRS to match PCB trace impedance (e.g., 40 Ω or 60 Ω), minimizing signal integrity issues |
| Deep Power Down Mode | Reduces standby current to <10 µA; retains no data but enables fastest wake-up among ultra-low-power states |
| Bidirectional DQS with Center-Aligned Write | Enables precise write capture using DQS-to-DQ skew tuning; supports DDR timing closure without phase-locked loops |
| Auto Precharge Option | Automatically precharges target bank after each burst, eliminating explicit PRE command overhead in sequential access patterns |
Applications
| Smartphone Application Processor Memory | Industrial Tablet Main Memory |
|---|---|
|
Use Scenario: Primary memory for ARM-based application processors in smartphones with dual-camera ISP pipelines and 4K video playback. IC Role / Device Role / Timing Role: x16 LPDDR interface provides 2.66 GB/s peak bandwidth at 166 MHz; CAS latency 2 minimizes UI thread stall time. Use Value: PASR and ATCSR cut average memory subsystem power by 35% during mixed foreground/background app usage. |
Use Scenario: Main memory in fanless industrial tablets deployed in warehouse logistics scanners operating continuously at 60°C ambient. IC Role / Device Role / Timing Role: Industrial-grade temperature rating (–40°C to +85°C) ensures reliability without derating; 60VFBGA footprint fits compact 4-layer PCBs. Use Value: Deep Power Down mode reduces idle power to <15 µA, extending battery runtime between RFID scan sessions. |
| Embedded Automotive Infotainment | Medical Handheld Diagnostic Device |
|
Use Scenario: Memory subsystem for QNX-based infotainment head units with real-time audio/video rendering and OTA update buffering. IC Role / Device Role / Timing Role: Four-bank architecture enables concurrent audio decode (Bank 0), graphics frame buffer (Bank 1), and firmware update staging (Bank 2). Use Value: Clock Stop capability suspends memory clocks during CPU idle periods, reducing EMI emissions below CISPR-25 Class 5 limits. |
Use Scenario: Onboard memory for portable ultrasound imaging devices requiring deterministic memory latency for real-time beamforming. IC Role / Device Role / Timing Role: Programmable output drive strength matches 50 Ω differential traces to maintain signal integrity across 12 cm flex PCB interconnects. Use Value: Burst length 8 + sequential access pattern delivers consistent 1.33 GB/s throughput for continuous RF echo data streaming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46H128M16LFCK-6 IT:F | Same density (1Gb x16), same 60VFBGA package, but operates at 200MHz (CL=3 only); higher IDD active current | Preferred where higher bandwidth (3.2 GB/s) justifies increased power; lacks PASR and ATCSR | Choose for performance-critical designs with adequate thermal headroom and no need for advanced self-refresh optimization |
| IS42S16160F-6BLI | Legacy LPDDR1 (not LPDDR2), 1.2V core, 66MHz max; incompatible voltage, timing, and command set | Only suitable for cost-sensitive legacy redesigns where LPDDR2 features are unused | Not recommended as functional alternative; requires full PHY and controller revalidation due to protocol incompatibility |
Compared with W94AD6KBHX6I TR, MT46H128M16LFCK-6 IT:F offers higher speed but sacrifices PASR/ATCSR power savings, while IS42S16160F-6BLI is architecturally incompatible - making W94AD6KBHX6I TR the optimal balance of industrial temperature support, advanced low-power modes, and LPDDR2 protocol compliance.
Availability
W94AD6KBHX6I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, industrial tablet main memory, and embedded automotive infotainment systems requiring stable component supply across extended product lifecycles.
Supply support for W94AD6KBHX6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.
W94AD6KBHX6I TR belongs to Winbond's LPDDR2 SDRAM product line, designed specifically for mobile and space-constrained embedded systems demanding high bandwidth efficiency, extended temperature operation, and multi-level power state control.
FAQ
What is the maximum data rate supported by W94AD6KBHX6I TR?
W94AD6KBHX6I TR supports a maximum clock frequency of 166 MHz, delivering a double-data-rate transfer rate of 333 MT/s. This yields a peak theoretical bandwidth of 2.66 GB/s over its 16-bit bus. The device is rated for –6 speed grade, and its AC timing parameters (e.g., tAC, tDQSQ) are fully characterized at this rate under industrial temperature and 1.8 V supply conditions.
Does W94AD6KBHX6I TR support CAS latency of 2 and 3 simultaneously?
W94AD6KBHX6I TR supports programmable CAS latency of either CL = 2 or CL = 3, selected during Mode Register initialization. Both values are valid and fully characterized in the datasheet, but only one is active at a time. The choice depends on system timing margin: CL = 2 reduces read latency for real-time tasks, while CL = 3 allows relaxed setup/hold timing for longer trace lengths or higher noise environments.
How does Partial Array Self Refresh (PASR) function in W94AD6KBHX6I TR?
In W94AD6KBHX6I TR, PASR allows selective self-refresh of only designated banks or subarrays, reducing refresh current by up to 50% compared to full-array refresh. Configuration is done via Extended Mode Register bits, enabling dynamic power scaling when only portions of memory are actively used - such as retaining boot code in Bank 0 while idling Banks 1–3 in a mobile OS suspend state.
What is the ball count and package type of W94AD6KBHX6I TR?
W94AD6KBHX6I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (60VFBGA) package measuring 8 mm × 10.5 mm × 0.6 mm with 0.5 mm pitch. This matches the LPDDR x16 configuration specified in the datasheet and is distinct from the 90VFBGA used for x32 variants like W94AD2KB. The package is RoHS-compliant and designed for automated SMT assembly.
Can W94AD6KBHX6I TR operate in Deep Power Down mode while retaining data?
No, W94AD6KBHX6I TR does not retain data in Deep Power Down (DPD) mode. DPD disables all internal circuitry including the memory array, reducing current to <10 µA but requiring full reinitialization (including PRECHARGE ALL and two AUTO REFRESH commands) upon exit. For data retention, use Self Refresh or ATCSR modes instead - DPD is intended for longest-duration idle periods where memory contents are not needed.
W94AD6KBHX6I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- LVCMOS
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9)
W94AD6KBHX6I TR FAQ
1.How can I place an order for W94AD6KBHX6I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W94AD6KBHX6I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W94AD6KBHX6I TR reliable?
The price and inventory of W94AD6KBHX6I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W94AD6KBHX6I TR is usually 5 days.
3.What payment methods are accepted for W94AD6KBHX6I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W94AD6KBHX6I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W94AD6KBHX6I TR?
W94AD6KBHX6I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W94AD6KBHX6I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W94AD6KBHX6I TR?
For technical support, including W94AD6KBHX6I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W94AD6KBHX6I TR requirements.
6.How does Aetrix verify that W94AD6KBHX6I TR is sourced from the original manufacturer or authorized distributors?
All W94AD6KBHX6I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W94AD6KBHX6I TR meets industry standards.
7.What is the process for return or replacement of W94AD6KBHX6I TR?
All W94AD6KBHX6I TR units undergo pre-shipment inspection (PSI). If there is an issue with W94AD6KBHX6I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W94AD6KBHX6I TR part is unused and in its original packaging.
Return procedure for W94AD6KBHX6I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W94AD6KBHX6I TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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