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Winbond Electronics Corporation W955K8MBYA5I

Part No.:
W955K8MBYA5I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
24-TBGA
Datasheet:
AetrixW955K8MBYA5I.pdf
Description:
IC DRAM 32MBIT HYPERBUS 24TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,528

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Product details

Overview

W955K8MBYA5I from Winbond Electronics is a 32Mb HyperRAM device implementing the HyperBus DDR interface for high-throughput, low-pin-count memory expansion in embedded systems. It operates at 1.8V, supports up to 200MHz clock frequency (400 MT/s), and uses an 8-bit bidirectional DQ bus with RWDS strobe/mask signaling. It targets graphics buffer, firmware code execution, and real-time data logging in microcontroller-based edge devices.

For engineers reviewing the W955K8MBYA5I datasheet, W955K8MBYA5I pinout, W955K8MBYA5I application, or W955K8MBYA5I equivalent, key selection criteria include its 24-ball TFBGA package, configurable burst modes (wrapped/linear/hybrid), hybrid sleep and deep power-down power states, and support for partial array refresh in temperature-constrained industrial environments.

Technical Context

The W955K8MBYA5I implements a DDR HyperBus interface with differential (CK/CK#) or single-ended (CK) clocking, using RWDS as a bidirectional strobe/mask signal synchronized to read/write data edges or center-aligned to clock edges respectively. Its command-address protocol encodes R/W#, address space (memory/register), and burst type in CA[47:45], enabling dynamic transaction control without dedicated control lines.

Internally, it employs row/column decoding with half-page addressing (16-byte granularity), supports linear burst with automatic next-row prefetch for sustained 400 MB/s throughput, and provides two configuration registers for latency tuning, drive strength, refresh mode (full/partial), and power state behavior (hybrid sleep, deep power down).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density32Mb (4M × 8-bit organization), enabling compact external RAM for MCU boot code and frame buffers.
InterfaceHyperBus DDR - 8-bit DQ + RWDS + CK/CK# or CK only - reduces signal count vs. parallel NOR/SDRAM while sustaining 400 MT/s.
Max Clock Frequency200MHz - defines maximum sustained transfer rate of 400 MB/s (8-bit × 2 edges/cycle × 200 MHz).
Supply VoltageVCC/VCCQ = 1.8V ±0.1V - dual-rail I/O (VCCQ) and core (VCC) supplies enable noise isolation and level-shifting flexibility.
Operating Temperature–40°C to +85°C case temperature - qualified for industrial-grade operation in automotive infotainment and motor control units.
Burst ModesConfigurable wrapped (16/32/64/128-byte), linear, or hybrid burst - supports cache-line fill (wrapped) and streaming graphics (linear) in same system.
Power StatesHybrid Sleep and Deep Power Down - reduce ICC to <10 µA (DPD), enabling battery-backed operation in always-on IoT nodes.

Pinout & Package

W955K8MBYA5I is housed in a 24-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package with 5×5 mm footprint and 0.8 mm ball pitch. The package supports automated assembly and thermal dissipation suitable for space-constrained industrial PCBs.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip Select InputActive-low slave enable; initiates all transactions on falling edge and terminates on rising edge - enables multi-device HyperBus daisy-chaining.
CK / CK#Differential Clock InputTiming reference for DDR transfers; CK# optional for single-ended mode - eliminates need for external clock buffer in cost-sensitive designs.
DQ[7:0]Bidirectional Data BusCarries command, address, and data in time-multiplexed DDR format - eliminates separate address bus and reduces PCB layer count.
RWDSBidirectional Strobe/MaskIndicates initial latency during CA phase; serves as read data strobe (edge-aligned) or write mask (high=masked) - replaces separate RD/WR control signals.
RESET#Hardware Reset InputAsynchronous initialization; places DQ/RWDS in high-Z and resets internal state - ensures deterministic startup after brown-out or wake-up.
VCC / VSSCore Power/GroundPowers input buffers (CK/CS#/RESET#), internal logic, and memory array - decoupling required per JEDEC TFBGA guidelines.
VCCQ / VSSQI/O Power/GroundSupplies DQ[7:0] and RWDS output drivers only - allows independent voltage scaling for interfacing with 1.8V logic domains.

Key Features

FeatureDesign Value
Configurable Drive StrengthAdjustable DQ/RWDS output drive via Configuration Register 0 - optimizes signal integrity across varying trace lengths and termination schemes.
Partial Array RefreshReduces refresh current by refreshing only active memory rows - extends battery life in low-duty-cycle sensor logging applications.
Hybrid Burst ModeCombines one wrapped burst followed by linear burst - satisfies both cache-line alignment requirements and sequential DMA transfers in same transaction.
Initial Latency SignalingRWDS-driven dynamic latency insertion (1× or 2× tACC) based on internal refresh needs - eliminates fixed worst-case timing margins.
LV-CMOS I/O CompatibilityAll signals meet LV-CMOS voltage thresholds (VIL/VIH) - enables direct connection to 1.8V FPGA I/O banks without level shifters.

Applications

Graphics Frame BufferFirmware Code Execution

Use Scenario: Storing and streaming 24-bit RGB pixel data for TFT LCD displays in HMI panels.

IC Role / Device Role / Timing Role: External frame buffer accessed via DMA with linear burst reads at 400 MB/s to sustain 60 Hz refresh on 800×480 displays.

Use Value: Eliminates need for discrete SDRAM controller logic; reduces BOM cost and PCB area versus parallel interface alternatives.

Use Scenario: Executing application firmware directly from external memory in resource-constrained MCUs lacking sufficient internal flash.

IC Role / Device Role / Timing Role: XIP-capable HyperRAM providing zero-wait-state instruction fetch via linear burst with prefetch-enabled row access.

Use Value: Enables >1 MB code storage without external SDRAM complexity or NOR flash write endurance limitations.

Real-Time Data LoggingIndustrial Sensor Hub

Use Scenario: Capturing timestamped analog sensor samples at 100 kS/s for vibration analysis in predictive maintenance gateways.

IC Role / Device Role / Timing Role: Circular buffer implemented in memory array with wrapped burst writes and partial array refresh during idle intervals.

Use Value: Sustains continuous write throughput while minimizing power consumption between sampling bursts via hybrid sleep entry/exit.

Use Scenario: Aggregating and preprocessing data from multiple CAN, SPI, and I²C sensors in factory automation edge controllers.

IC Role / Device Role / Timing Role: Shared working memory for RTOS tasks and interrupt service routines, accessed concurrently via configurable burst lengths.

Use Value: Provides deterministic latency for time-critical ISR data exchange without DRAM refresh contention or bus arbitration overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperRAM interface applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
W956K8MBYA5I64Mb density (same 24-ball TFBGA, 1.8V, 200MHz), identical HyperBus interface and register map.Supports larger firmware images or higher-resolution frame buffers where 32Mb is insufficient.Select when memory capacity requirement exceeds 32Mb but pinout and timing compatibility must be preserved.
IS66WV51216EBLL-100BLI512K × 16-bit parallel SRAM (100MHz async), 48-pin TSOP-II, no HyperBus or DDR interface.Requires full address/data bus and dedicated control lines; lacks power-saving modes and burst optimization.Choose only if legacy design uses parallel SRAM interface and cannot adopt HyperBus architecture changes.

Compared with W955K8MBYA5I, W956K8MBYA5I offers double capacity in identical form factor and timing, while IS66WV51216EBLL-100BLI demands more PCB area, higher pin count, and lacks dynamic power management - making W955K8MBYA5I optimal for new designs prioritizing integration and energy efficiency.

Availability

W955K8MBYA5I is available at Aetrix Electronics and suitable for graphics frame buffer, firmware code execution, and real-time data logging applications requiring stable component supply, industrial temperature support, and long-term lifecycle assurance.

Supply support for W955K8MBYA5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND, RAM, and interface-optimized memories.

The HyperRAM product line was designed to replace parallel NOR/PSRAM in MCU-based systems by delivering DDR bandwidth with minimal pin count and integrated power management for battery-powered and thermally constrained applications.

FAQ

What is the maximum data throughput achievable with the W955K8MBYA5I?

The W955K8MBYA5I achieves up to 400 MB/s sustained throughput using its 8-bit HyperBus DDR interface at 200MHz (8 bits × 2 data edges per clock × 200 MHz). This assumes linear burst mode with continuous CS# assertion and no inter-burst gaps. Real-world throughput depends on host controller latency, burst length configuration, and refresh overhead - but the architecture eliminates wait states typical of parallel interfaces. W955K8MBYA5I delivers this performance with only 11 signal pins (including power), significantly reducing routing complexity compared to traditional SDRAM.

Does the W955K8MBYA5I support execute-in-place (XIP) operation?

Yes, the W955K8MBYA5I supports execute-in-place (XIP) operation through its HyperBus interface, allowing microcontrollers to fetch instructions directly from the memory array without loading into internal RAM. This capability relies on predictable read latency (configurable via Configuration Register 0) and linear burst support for sequential instruction flow. W955K8MBYA5I's RWDS-based latency signaling and prefetch-optimized row access ensure deterministic timing for XIP - critical for real-time firmware execution in automotive and industrial control applications.

How does the RWDS pin function during read versus write operations in the W955K8MBYA5I?

In the W955K8MBYA5I, RWDS serves three distinct roles: during Command/Address (CA) phase, it outputs high to indicate additional initial latency is needed; during read data transfer, it acts as an edge-aligned read data strobe synchronized to DQ transitions; during write data transfer, it functions as a byte-level write mask (high = masked, low = written). This multifunctionality eliminates separate RD/WR and strobe signals. W955K8MBYA5I's RWDS behavior is fully compliant with HyperBus specification v2.0 and requires no external logic - simplifying host interface design while maintaining precise timing control.

What power-saving modes are available on the W955K8MBYA5I and how are they entered?

The W955K8MBYA5I supports Hybrid Sleep and Deep Power Down (DPD) modes, both entered via HyperBus register writes to Configuration Register 0 and 1. Hybrid Sleep reduces ICC to ~150 µA while retaining memory contents and allowing fast wake-up (<1 µs); DPD lowers ICC to <10 µA but requires full reinitialization upon exit. Entry is controlled by setting specific bit fields (e.g., CR0[23] for DPD), not hardware pins - enabling software-defined power policy. W955K8MBYA5I's power states are especially valuable in battery-operated edge nodes where duty-cycled sensing must minimize average current draw without losing volatile context.

Can the W955K8MBYA5I be used with a single-ended clock instead of differential clocking?

Yes, the W955K8MBYA5I fully supports single-ended clock operation using only the CK pin, with CK# left unconnected or tied to VSS. The device detects clock mode automatically: when CK# is inactive (not toggling), it defaults to single-ended mode and ignores CK# transitions. This flexibility allows designers to avoid differential routing complexity and associated PCB cost in cost-sensitive applications. W955K8MBYA5I maintains full 200MHz operation and timing compliance in both modes - verified across –40°C to +85°C - making it adaptable to diverse MCU and FPGA interface capabilities.

W955K8MBYA5I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
24-TBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
HyperRAM
Memory Size:
32Mbit
Memory Organization:
4M x 8
Memory Interface:
HyperBus
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
1.7V ~ 2V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-TFBGA (6x8)

W955K8MBYA5I FAQ

1.How can I place an order for W955K8MBYA5I through Aetrix?

Please submit a Request for Quotation (RFQ) for W955K8MBYA5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W955K8MBYA5I reliable?

The price and inventory of W955K8MBYA5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W955K8MBYA5I is usually 5 days.

3.What payment methods are accepted for W955K8MBYA5I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W955K8MBYA5I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W955K8MBYA5I?

W955K8MBYA5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W955K8MBYA5I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W955K8MBYA5I?

For technical support, including W955K8MBYA5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W955K8MBYA5I requirements.

6.How does Aetrix verify that W955K8MBYA5I is sourced from the original manufacturer or authorized distributors?

All W955K8MBYA5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W955K8MBYA5I meets industry standards.

7.What is the process for return or replacement of W955K8MBYA5I?

All W955K8MBYA5I units undergo pre-shipment inspection (PSI). If there is an issue with W955K8MBYA5I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W955K8MBYA5I part is unused and in its original packaging.

Return procedure for W955K8MBYA5I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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