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Winbond Electronics Corporation W955N8MBYA5I

Part No.:
W955N8MBYA5I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
24-TBGA
Datasheet:
AetrixW955N8MBYA5I.pdf
Description:
IC DRAM 32MBIT HYPERBUS 24TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,080

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Product details

Overview

W955N8MBYA5I from Winbond Electronics is a 32Mb (4MB) HyperBus-compatible pseudo-static RAM with DDR interface, operating at up to 200MHz clock frequency and delivering up to 400 MT/s data throughput. It features an 8-bit bidirectional DQ bus, configurable burst modes (wrapped/linear/hybrid), and supports hybrid sleep and deep power-down for low-power embedded systems requiring high-bandwidth off-chip memory - such as automotive instrument clusters and industrial HMI displays.

For engineers reviewing the W955N8MBYA5I datasheet, W955N8MBYA5I pinout, W955N8MBYA5I application, or W955N8MBYA5I equivalent, key selection considerations include its HyperBus interface timing compliance, 24-ball TFBGA package footprint, configurable initial latency via RWDS feedback, and support for partial array refresh in temperature-constrained environments.

Technical Context

The W955N8MBYA5I implements a DDR HyperBus interface with differential (CK/CK#) or single-ended (CK) clocking, using RWDS as a bidirectional strobe/mask signal that dynamically indicates refresh-induced latency during command/address phase and serves as source-synchronous read strobe or write mask during data transfer. Its internal architecture includes row/column decoders, data latches, and configurable refresh control logic supporting both full and partial array refresh.

Command/address decoding uses six CA bytes transferred over DQ[7:0] in DDR fashion across three clock cycles, with bit-level assignments defining R/W#, address space (memory/register), burst type, and target row/column. Configuration Register 0 governs wrapped/linear/hybrid burst lengths (16–128 bytes), drive strength, and deep power-down entry, while Configuration Register 1 controls master clock type and hybrid sleep behavior.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 32Mb (4MB) organized as 512K × 8-bit - provides sufficient off-chip buffer for graphics frame buffers or firmware overlays in resource-constrained MCUs.
Interface HyperBus DDR - reduces pin count vs parallel NOR/NAND while sustaining 400 MB/s peak bandwidth (8-bit × 2 edges × 200 MHz).
Supply Voltage VCC/VCCQ = 3.0V ±0.3V - compatible with standard 3.3V I/O domains; separate VCCQ enables output drive optimization without affecting core logic.
Operating Temperature −40°C to +85°C case temperature - qualified for industrial and automotive cabin applications without derating.
Burst Modes Configurable wrapped (16/32/64/128-byte), linear, or hybrid burst - enables cache-line-aligned fetches (wrapped) or sequential streaming (linear) per transaction.
Power Management Hybrid Sleep and Deep Power Down modes - reduces standby current to <10 µA (DPD), enabling battery-backed operation in always-on subsystems.
Initial Latency Control RWDS-driven dynamic latency insertion - slave asserts RWDS High during CA phase to signal required tRFH refresh delay, enabling host to adapt timing without fixed worst-case latency.

Pinout & Package

W955N8MBYA5I is housed in a 24-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package with 5×5 mm footprint and 0.5 mm ball pitch. The package supports automated optical inspection (AOI) and reflow compatibility for high-volume SMT assembly.

Pin/Terminal Circuit Role Design Meaning
CS# Chip Select Input Active-low enable for all HyperBus transactions; defines transaction boundaries and isolates device on shared bus.
CK / CK# Differential Clock Input Timing reference for DDR command/address/data transfers; CK# optional for single-ended mode - simplifies routing in noise-sensitive layouts.
DQ[7:0] Bidirectional Data Bus Carries command/address/data in DDR fashion; supports byte-level masking during writes via RWDS - enables unaligned multi-byte updates without read-modify-write.
RWDS Bidirectional Strobe/Mask Indicates refresh latency during CA phase; acts as read data strobe (edge-aligned) or write mask (High = masked) - eliminates need for separate RD/WR control signals.
RESET# Hardware Reset Input Asynchronous initialization signal; places DQ/RWDS in Hi-Z and resets internal state - ensures deterministic startup after power-up or brownout.
VCC / VSS Core Power/Ground Powers input buffers, control logic, and memory array; separate VCCQ/VSSQ decoupling required for stable DQ/RWDS output swing.

Key Features

Feature Design Value
Dynamic RWDS Latency Feedback Enables host controller to insert only required initial latency (1× or 2× tACC) based on real-time refresh status - avoids fixed worst-case delays and improves average read throughput.
Configurable Drive Strength Adjustable DQ/RWDS output drive via Configuration Register 0 - allows optimization for trace length and termination scheme without hardware change.
Hybrid Burst Mode Combines one wrapped burst (e.g., cache line fill) followed by linear burst (e.g., sequential pixel stream) - supports mixed-access patterns in multimedia pipelines.
Partial Array Refresh Reduces refresh power by refreshing only active rows - extends battery life in always-on display controllers where full-array refresh is unnecessary.
Separate VCCQ Supply Isolates I/O power domain from core logic - permits voltage scaling of DQ drivers independent of memory array, improving EMI and signal integrity.

Applications

Automotive Instrument Clusters Industrial HMI Displays

Use Scenario: Real-time rendering of animated gauges and warning icons with minimal MCU overhead.

IC Role / Device Role / Timing Role: Off-chip frame buffer providing low-latency, high-bandwidth access to graphics engine via HyperBus DDR interface.

Use Value: 400 MB/s sustained bandwidth eliminates bottlenecks in 720p UI rendering; hybrid sleep mode maintains context during display dimming without full system wake.

Use Scenario: Local storage of vector-based UI assets and localized language strings in factory-floor HMIs.

IC Role / Device Role / Timing Role: Non-volatile-equivalent working memory mapped directly into MCU address space via HyperBus.

Use Value: Wrapped burst mode enables cache-line-aligned loading of glyph tables; configurable drive strength accommodates long PCB traces in modular panel designs.

Edge AI Inference Accelerators Medical Imaging Preview Buffers

Use Scenario: Temporary storage of intermediate neural network layer outputs during edge inference.

IC Role / Device Role / Timing Role: High-speed scratchpad memory accessed concurrently by CPU and DMA engines over shared HyperBus.

Use Value: Linear burst mode sustains >350 MB/s throughput during tensor matrix reads; partial array refresh cuts idle power by 40% vs full refresh.

Use Scenario: Real-time buffering of ultrasound or X-ray preview frames before compression and transmission.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory supporting precise timing-critical DMA transfers from imaging sensor interface.

Use Value: RWDS-driven latency feedback ensures consistent tACC across temperature; −40°C to +85°C rating guarantees reliability in clinical equipment enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS66WV51216EBLL-100BLI Parallel SRAM interface (no HyperBus), 512K × 16-bit, 100 MHz async access - higher pin count, no DDR or dynamic latency. Lacks RWDS-based latency adaptation and burst flexibility; requires wider bus and more PCB layers. Select when legacy parallel interface is mandated and bandwidth ≤200 MB/s suffices.
W958D8MBYA5I Same HyperBus interface, 64Mb density, identical 24-ball TFBGA package and timing - pin-compatible upgrade path. Provides double memory capacity with no layout or firmware changes beyond address mapping extension. Choose for future-proofing or applications needing >4MB frame buffer, e.g., dual-display systems.

Compared with IS66WV51216EBLL-100BLI, W955N8MBYA5I reduces interface pins by 60% and enables adaptive latency; versus W958D8MBYA5I, it offers lower cost and power for 32Mb use cases while sharing identical timing, package, and register map - simplifying qualification across product variants.

Availability

W955N8MBYA5I is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI accelerators requiring stable component supply, extended temperature operation, and HyperBus interface compatibility.

Supply support for W955N8MBYA5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR, Serial NAND, and high-performance interface memories.

The W955N8MBYA5I belongs to Winbond's HyperRAM family, designed specifically to replace parallel PSRAM and low-density DDR SDRAM in MCU-based systems where pin count, power, and simplicity are critical constraints.

FAQ

What interface protocol does the W955N8MBYA5I use, and how does it differ from standard SPI or parallel interfaces?

The W955N8MBYA5I uses the HyperBus DDR interface - a low-pin-count, double-data-rate protocol with differential or single-ended clocking, 8-bit DQ bus, and bidirectional RWDS strobe/mask. Unlike SPI, it supports true random-access reads/writes at up to 400 MT/s without command overhead; unlike parallel interfaces, it eliminates address bus and reduces total signal count from ~40 to 12 pins (including power), simplifying PCB routing and reducing EMI.

Does the W955N8MBYA5I support automatic refresh, and how is it managed?

Yes, the W955N8MBYA5I performs automatic self-refresh internally. It supports both full array refresh and configurable partial array refresh via Configuration Register 1. Partial refresh reduces power consumption by refreshing only active memory rows - particularly valuable in always-on applications like automotive displays where full refresh is unnecessary. No external refresh controller or timing intervention is required.

What is the role of the RWDS pin in W955N8MBYA5I, and why is it critical to HyperBus operation?

The RWDS pin in W955N8MBYA5I serves three critical roles: (1) as an output during command/address phase to signal required refresh latency (High = additional tACC), (2) as a source-synchronous read data strobe (edge-aligned with DQ), and (3) as a write data mask (High = byte masked). This multifunctionality eliminates separate RD/WR control lines and enables dynamic latency adaptation - a core advantage of HyperBus over fixed-timing interfaces.

Can the W955N8MBYA5I operate with a single-ended clock, and what are the implications for board design?

Yes, the W955N8MBYA5I supports single-ended clock operation using only the CK pin; CK# is unused and can be left unconnected. This simplifies PCB layout by eliminating differential pair routing and matching requirements. However, single-ended mode may reduce noise immunity in electrically noisy environments - differential mode (CK/CK#) is recommended for automotive or industrial applications where EMI robustness is critical.

What package type and footprint does the W955N8MBYA5I use, and is it compatible with standard reflow processes?

The W955N8MBYA5I uses a 24-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package with 5×5 mm body size and 0.5 mm ball pitch. It is fully compatible with standard lead-free reflow profiles (J-STD-020) and supports automated optical inspection (AOI). The small footprint and low profile make it ideal for space-constrained applications such as automotive dashboards and portable medical devices.

W955N8MBYA5I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
24-TBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
HyperRAM
Memory Size:
32Mbit
Memory Organization:
4M x 8
Memory Interface:
HyperBus
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-TFBGA (8x6)

W955N8MBYA5I FAQ

1.How can I place an order for W955N8MBYA5I through Aetrix?

Please submit a Request for Quotation (RFQ) for W955N8MBYA5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W955N8MBYA5I reliable?

The price and inventory of W955N8MBYA5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W955N8MBYA5I is usually 5 days.

3.What payment methods are accepted for W955N8MBYA5I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W955N8MBYA5I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W955N8MBYA5I?

W955N8MBYA5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W955N8MBYA5I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W955N8MBYA5I?

For technical support, including W955N8MBYA5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W955N8MBYA5I requirements.

6.How does Aetrix verify that W955N8MBYA5I is sourced from the original manufacturer or authorized distributors?

All W955N8MBYA5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W955N8MBYA5I meets industry standards.

7.What is the process for return or replacement of W955N8MBYA5I?

All W955N8MBYA5I units undergo pre-shipment inspection (PSI). If there is an issue with W955N8MBYA5I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W955N8MBYA5I part is unused and in its original packaging.

Return procedure for W955N8MBYA5I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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