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Winbond Electronics Corporation W956A8MBYA5I

Part No.:
W956A8MBYA5I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
24-TBGA
Datasheet:
AetrixW956A8MBYA5I.pdf
Description:
IC DRAM 64MBIT HYPERBUS 24TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:358

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Product details

Overview

W956A8MBYA5I from Winbond Electronics is a 64Mb HyperRAM device operating at 3.0V with HyperBus DDR interface, 200MHz clock rate (400 MT/s), and 8-bit data bus in 24-ball TFBGA package - used as high-speed external memory for microcontrollers and SoCs in graphics-intensive embedded applications.

For engineers reviewing the W956A8MBYA5I datasheet, W956A8MBYA5I pinout, W956A8MBYA5I application, or W956A8MBYA5I equivalent, key selection considerations include its 3.0V VCC/VCCQ supply, configurable burst modes (wrapped/linear/hybrid), RWDS-based latency signaling, Deep Power Down and Hybrid Sleep power states, and support for partial array refresh in resource-constrained systems.

Technical Context

The W956A8MBYA5I implements a DDR HyperBus interface with differential (CK/CK#) or single-ended clocking, using DQ[7:0] for bidirectional command/address/data transfer and RWDS as a bidirectional strobe/mask signal. It supports 6-byte Command-Address (CA) framing to define read/write, address space (memory/register), burst type, and row/column targeting.

Internally, it features configurable initial latency (1× or 2× tACC), hybrid burst (wrapped + linear), drive strength control, and dual refresh modes (full/partial array). Its memory architecture delivers sustained 400 MB/s throughput via interleaved half-page access during linear bursts, with RWDS edge-aligned read strobing and center-aligned write masking.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 64Mb (8MB) - provides sufficient off-chip RAM for frame buffers or firmware overlays in MCU-based displays.
Interface HyperBus DDR - low-pin-count (11 signal balls), 200MHz clock enables 400 MT/s without complex routing or termination.
Supply Voltage 3.0V VCC/VCCQ - compatible with 3.3V I/O domains and simplifies power design versus mixed-voltage 1.8V/3.3V solutions.
Operating Temperature –40°C to +85°C case temperature - qualified for industrial and automotive cabin electronics environments.
Burst Configurability Wrapped (16–128 bytes), linear, or hybrid burst - enables cache-line fill (wrapped) and streaming graphics (linear) in same system.
Power Modes Hybrid Sleep and Deep Power Down - reduces active current to ≤100µA in DPD, enabling battery-backed operation.
Refresh Control Partial Array Refresh - lowers refresh power by >50% vs full-array refresh when only small memory regions are active.

Pinout & Package

Package: 24-ball TFBGA, 5×5 mm, 0.8 mm pitch, ball-down mounting - optimized for compact PCB layouts and thermal dissipation in space-constrained modules.

Pin/Terminal Circuit Role Design Meaning
CS# Chip Select Input Active-low enable for all transactions; defines transaction boundaries and enables multi-device bus sharing.
CK / CK# Differential Clock Input Supports both differential (CK/CK#) and single-ended (CK only) clocking; determines timing reference for DDR sampling.
DQ[7:0] Bidirectional Data Bus Carries command, address, and data in time-multiplexed DDR fashion; LV-CMOS compatible with 3.0V logic levels.
RWDS Bidirectional Strobe/Mask Indicates initial latency during CA phase; serves as read data strobe (edge-aligned) and write mask (center-aligned).
RESET# Hardware Reset Input Asynchronous reset that forces Standby state and places DQ/RWDS in High-Z; includes internal weak pull-up.
VCC / VSS Core Power/Ground VCC powers input buffers (CK/CS#/RESET#/DQ/RWDS) and internal logic; VSS is dedicated ground return.
VCCQ / VSSQ I/O Power/Ground VCCQ powers output drivers for DQ/RWDS; independent supply allows noise isolation between core and I/O domains.

Key Features

Feature Design Value
Configurable Drive Strength Adjustable output driver strength on DQ/RWDS pins - enables signal integrity tuning across varying trace lengths and loads.
Hybrid Burst Mode Combines wrapped burst (for cache line fill) followed by linear burst (for sequential streaming) - optimizes mixed-access workloads.
RWDS-Based Latency Signaling RWDS output during CA phase indicates whether tRFH refresh latency is added - eliminates fixed worst-case timing margins.
Partial Array Refresh Refreshes only active memory sub-arrays - cuts refresh current by up to 60% compared to full-array refresh in burst-oriented usage.
Deep Power Down Entry Enters ultra-low-power state (<100µA ICC) with retention loss; exit time <100µs - suitable for rapid wake/sleep cycles in portable UIs.

Applications

Industrial HMI Display Automotive Instrument Cluster

Use Scenario: Driving 720p LCD with dynamic gauge animations and real-time telemetry overlays.

IC Role / Device Role / Timing Role: External frame buffer and GUI asset store interfaced to MCU via HyperBus.

Use Value: 400 MB/s bandwidth sustains 60 fps rendering; Hybrid Sleep mode reduces idle power by 85% vs SDR PSRAM.

Use Scenario: Rendering digital speedometer, ADAS warnings, and navigation turn-by-turn on TFT cluster.

IC Role / Device Role / Timing Role: Low-latency memory extension for SoC GPU subsystem with deterministic tACC.

Use Value: RWDS-driven latency signaling ensures predictable read response; -40°C to +85°C rating meets AEC-Q100 Grade 3 requirements.

Smart Home Gateway UI Medical Portable Monitor

Use Scenario: Hosting responsive touch UI with animated icons and local voice assistant context buffers.

IC Role / Device Role / Timing Role: High-bandwidth, low-pin-count memory co-processor for ARM Cortex-M7 host.

Use Value: 24-ball TFBGA saves >30% board area vs QSPI flash+PSRAM combo; 3.0V supply simplifies PMIC design.

Use Scenario: Storing waveform history and alarm-triggered snapshot buffers in battery-powered ECG monitor.

IC Role / Device Role / Timing Role: Energy-efficient memory for intermittent high-rate data capture and playback.

Use Value: Deep Power Down draws <100µA between 10-second ECG bursts; Partial Array Refresh extends battery life by 22%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
W956D8MBYA5I 1.8V VCC/VCCQ supply; identical 200MHz timing, 24-ball TFBGA, and HyperBus feature set. Targets designs with 1.8V I/O domains (e.g., modern LPDDR-capable MCUs); not interoperable with 3.0V logic without level shifting. Select when host SoC operates at 1.8V and requires lowest possible active power; verify voltage translation if interfacing with 3.3V peripherals.
IS66WV1288GBLL-150B3LI 128Mb parallel SRAM with 150MHz async interface; no HyperBus, RWDS, or power modes - higher pin count (48-pin TSOP). Suitable for legacy controllers lacking HyperBus PHY; lacks burst optimization, latency signaling, and low-power states of W956A8MBYA5I. Choose only if existing design uses parallel SRAM interface and cannot adopt HyperBus; expect ~4× higher PCB area and 3× higher standby current.

Compared with W956D8MBYA5I, the W956A8MBYA5I enables direct integration into 3.0V systems without level shifters, while IS66WV1288GBLL-150B3LI offers higher density but sacrifices power efficiency, interface simplicity, and timing predictability.

Availability

W956A8MBYA5I is available at Aetrix Electronics and suitable for industrial HMI displays, automotive instrument clusters, and portable medical monitors requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for W956A8MBYA5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND, Serial Flash, and HyperRAM products for embedded and industrial markets.

The W956A8MBYA5I belongs to Winbond's HyperRAM family, designed specifically to replace legacy PSRAM and parallel SRAM in bandwidth-constrained, pin-limited MCU and SoC applications demanding DDR-like throughput with simplified interface.

FAQ

What is the maximum clock frequency supported by the W956A8MBYA5I?

The W956A8MBYA5I supports a maximum clock frequency of 200MHz, enabling Double Data Rate transfers at up to 400 MT/s. This specification is validated across the full –40°C to +85°C operating temperature range and applies to both read and write transactions using the HyperBus interface. The W956A8MBYA5I achieves this performance with low signal count (11 active balls) and no external termination resistors required.

Does the W956A8MBYA5I support both differential and single-ended clocking?

Yes, the W956A8MBYA5I supports both differential (CK/CK#) and single-ended (CK only) clocking modes. In differential mode, CK and CK# must be driven with complementary signals; in single-ended mode, CK# is left unconnected and the device uses CK alone as the timing reference. This flexibility allows the W956A8MBYA5I to interface with host controllers offering either clock architecture without redesign.

How does the RWDS pin function during read versus write operations in the W956A8MBYA5I?

In the W956A8MBYA5I, RWDS serves three distinct roles: during Command/Address transfer, it outputs to signal initial latency; during read data transfer, it acts as an edge-aligned read data strobe; during write data transfer, it functions as a center-aligned write data mask. This multifunctionality eliminates the need for separate strobe and mask signals, reducing pin count while maintaining precise timing control for both directions.

What power-saving modes are available on the W956A8MBYA5I and how do they differ?

The W956A8MBYA5I offers Hybrid Sleep and Deep Power Down modes. Hybrid Sleep retains memory contents with ~150µA ICC and supports fast wake (<1µs); Deep Power Down drops ICC to <100µA but loses memory contents and requires ~100µs initialization on wake. Both modes are entered via HyperBus register writes and provide scalable energy reduction depending on retention and latency requirements of the host system.

Is the W956A8MBYA5I pin-compatible with other devices in the W956x8MBYA family?

Yes, the W956A8MBYA5I shares identical 24-ball TFBGA pinout and ball assignment with W956D8MBYA5I, W956A8MBYA6I, and W956D8MBYA6I. All variants use the same CS#, CK/CK#, DQ[7:0], RWDS, RESET#, VCC, VCCQ, VSS, and VSSQ connections. This allows drop-in replacement between speed grades (200MHz vs 166MHz) and voltage grades (3.0V vs 1.8V), provided host voltage domain and timing constraints are met.

W956A8MBYA5I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
24-TBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
HyperRAM
Memory Size:
64Mbit
Memory Organization:
8M x 8
Memory Interface:
HyperBus
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-TFBGA (6x8)

W956A8MBYA5I FAQ

1.How can I place an order for W956A8MBYA5I through Aetrix?

Please submit a Request for Quotation (RFQ) for W956A8MBYA5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W956A8MBYA5I reliable?

The price and inventory of W956A8MBYA5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W956A8MBYA5I is usually 5 days.

3.What payment methods are accepted for W956A8MBYA5I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W956A8MBYA5I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W956A8MBYA5I?

W956A8MBYA5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W956A8MBYA5I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W956A8MBYA5I?

For technical support, including W956A8MBYA5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W956A8MBYA5I requirements.

6.How does Aetrix verify that W956A8MBYA5I is sourced from the original manufacturer or authorized distributors?

All W956A8MBYA5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W956A8MBYA5I meets industry standards.

7.What is the process for return or replacement of W956A8MBYA5I?

All W956A8MBYA5I units undergo pre-shipment inspection (PSI). If there is an issue with W956A8MBYA5I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W956A8MBYA5I part is unused and in its original packaging.

Return procedure for W956A8MBYA5I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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