Winbond Electronics Corporation W956D6HBCX7I TR

Overview

W956D6HBCX7I TR from Winbond is a 64Mb x16 asynchronous/burst/synchronous pseudo-static RAM with multiplexed address/data bus, designed for low-power portable systems requiring DRAM density and SRAM-like interface simplicity. It delivers 70ns random access time, supports 133MHz burst clocking, and integrates temperature-compensated refresh (TCR) and partial-array refresh (PAR) to achieve 250μA standby current at -40°C to +85°C.

For engineers reviewing the W956D6HBCX7I TR datasheet, W956D6HBCX7I TR pinout, W956D6HBCX7I TR application, or W956D6HBCX7I TR equivalent, this device serves as a CellularRAM 1.5–compliant PSRAM alternative to SRAM in memory-constrained mobile, IoT, and embedded controller applications where signal count reduction and self-refresh autonomy are critical.

Technical Context

This ADMUX PSRAM implements a DRAM core with on-die address/data multiplexing (A/DQ[15:0]), enabling 16-bit data transfers while reducing pin count versus discrete SRAM. Its dual-mode bus operation-configured via Bus Configuration Register (BCR)-supports both asynchronous SRAM-style access (ADV#-latched) and synchronous burst transfers (CLK-synchronized), with programmable latency (3–5 cycles) and wrap/sequential burst options.

The device embeds two user-accessible configuration registers: BCR governs bus timing, drive strength, WAIT polarity, and burst length (4/8/16/32/continuous); RCR controls refresh behavior-including TCR, PAR activation, and Deep Power-Down entry-allowing system-level power optimization without external refresh controller intervention.

Key Specifications

Pinout & Package

Package: 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8mm × 8mm × 0.6mm, 0.5mm ball pitch - optimized for space-constrained mobile PCBs with thermal and mechanical reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with APM1608S16B-133 and IS66WVH8M16EBLL-70BLI, W956D6HBCX7I TR uniquely balances pin efficiency, configurable low-power modes (TCR/PAR/DPD), and burst bandwidth - making it the optimal choice for battery-sensitive, space-constrained designs needing CellularRAM 1.5 compatibility.

Availability

W956D6HBCX7I TR is available at Aetrix Electronics and suitable for smartphone application processor cache, industrial HMI display buffer, wireless IoT sensor node, and automotive infotainment boot ROM applications requiring stable component supply, extended temperature operation, and long-term lifecycle assurance.

Supply support for W956D6HBCX7I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and audio codecs, with global manufacturing and quality certifications.

W956D6HBCX7I TR belongs to Winbond's CellularRAM-compliant ADMUX PSRAM product line, engineered specifically for mobile and embedded systems needing SRAM interface simplicity with DRAM density and advanced power management.

FAQ

What is the maximum burst clock frequency supported by W956D6HBCX7I TR?

W956D6HBCX7I TR supports a maximum burst clock frequency of 133MHz (tCLK = 7.5ns), as specified in its ordering information and electrical characteristics table. This timing is validated across the full -40°C to +85°C operating range and enables high-bandwidth data transfers for display buffering and firmware caching applications. The device maintains this performance while retaining full compatibility with CellularRAM 1.5 timing protocols.

Does W956D6HBCX7I TR require an external refresh controller?

No, W956D6HBCX7I TR does not require an external refresh controller. It incorporates a transparent self-refresh mechanism that executes DRAM refresh autonomously. The refresh configuration register (RCR) allows system-level tuning of refresh behavior - including temperature-compensated refresh (TCR) and partial-array refresh (PAR) - all managed internally without CPU or memory controller involvement.

How is the 64Mb memory organized in W956D6HBCX7I TR?

W956D6HBCX7I TR organizes its 64Mb capacity as a 4M × 16-bit array, meaning it provides 4 million 16-bit words. Address inputs A[21:0] support full addressing, with A[21:16] used for row selection and A[15:0] for column and byte selection. This structure aligns with CellularRAM 1.5 x16 A/D MUX specifications and enables efficient use of the multiplexed A/DQ[15:0] bus.

What power-saving modes are available in W956D6HBCX7I TR?

W956D6HBCX7I TR offers three hardware-controlled power-saving modes: Standby Mode (250μA), Partial-Array Refresh (PAR), and Deep Power-Down (DPD). PAR limits refresh to active memory regions, while DPD reduces current to sub-1μA via RCR[4] configuration. All modes are entered without external circuitry - only register writes and CE# control are needed.

Can W956D6HBCX7I TR operate in both asynchronous and synchronous modes simultaneously?

W956D6HBCX7I TR cannot operate in both modes simultaneously, but it supports seamless mode switching via the Bus Configuration Register (BCR[15]). Setting BCR[15] = 1 enables asynchronous operation (ADV#-latched), while BCR[15] = 0 enables synchronous burst mode (CLK-synchronized). The device retains full register configurability in either mode, allowing runtime reconfiguration without reset.