Winbond Electronics Corporation W956D6KBKX7I
- Part No.:
- W956D6KBKX7I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 49-WFBGA
- Datasheet:
-
W956D6KBKX7I.pdf
- Description:
- IC PSRAM 64MBIT PAR 49WFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:292
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Product details
Overview
W956D6KBKX7I from Winbond is a 64Mb (4M × 16) pseudo-static RAM with asynchronous/burst/synchronous operation and address/data multiplexing. It features a DRAM core with transparent self-refresh, 70ns random access time, 133MHz max clock rate, and supports CRAM 1.5 x16 A/D MUX compliance for cellular and portable memory applications.
For engineers reviewing the W956D6KBKX7I datasheet, W956D6KBKX7I pinout, W956D6KBKX7I application, or W956D6KBKX7I equivalent, this device serves as a low-power, high-bandwidth PSRAM replacement for SRAM in embedded host controllers requiring burst-mode Flash-compatible timing, partial-array refresh, and deep power-down mode.
Technical Context
The W956D6KBKX7I implements a dual-mode bus interface controlled by the Bus Configuration Register (BCR), enabling either asynchronous operation (BCR[15] = 1) or synchronous burst mode (BCR[15] = 0). It uses a 16-bit multiplexed A/DQ bus with ADV#-latched addressing and supports both fixed and variable latency READs.
Refresh is managed via the Refresh Configuration Register (RCR), supporting temperature-compensated refresh (TCR), partial-array refresh (PAR), and deep power-down (DPD) - all configurable without external controller intervention. The device integrates a DRAM core with on-chip logic to emulate SRAM timing while maintaining DRAM density and power efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 64Mb (4,194,304 × 16-bit words) - provides high-density memory footprint reduction vs. SRAM in portable designs. |
| Access Time | 70ns random access - enables direct SRAM drop-in replacement in legacy interfaces without timing redesign. |
| Max Clock Rate | 133MHz (tCLK = 7.5ns) - supports high-throughput burst transfers in bandwidth-constrained mobile SoC interconnects. |
| VCC / VCCQ | 1.7V–1.95V (1.8V nominal) - compatible with modern low-voltage I/O domains and battery-powered system rails. |
| Standby Current | <250 μA - achieved via TCR and PAR, critical for extended battery life in always-on IoT endpoints. |
| Burst Length | 4/8/16/32-word or continuous - configurable via BCR[2:0], enabling flexible trade-offs between latency and throughput. |
| Operating Temp | −40°C to +85°C case temperature - qualified for industrial and automotive infotainment memory subsystems. |
Pinout & Package
Package: 49-ball WFBGA (6mm × 8mm, 0.5mm pitch), ball-grid layout optimized for compact PCB routing and thermal dissipation in handheld devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[max:16] | Address/Data Input | Multiplexed 6-bit address bus (A21–A16); used during register load and array access with ADV# control. |
| A/DQ[15:0] | Address/Data I/O | 16-bit bidirectional multiplexed bus - carries addresses (ADV# LOW) or data (ADV# HIGH), reducing signal count by 50% vs. non-muxed PSRAM. |
| CLK | Clock Input | Synchronizes burst operations; must be static (HIGH/LOW) during asynchronous mode - enables mixed-mode bus compatibility. |
| ADV# | Address Valid | Latches address on rising edge in async mode; initiates burst sequence in sync mode - central timing reference for all access types. |
| CRE | Control Register Enable | Enables RCR/BCR write (CRE HIGH + WE# LOW) or read (CRE HIGH + OE# LOW) - separates configuration from memory access paths. |
| WAIT | Data-Valid Feedback Output | Indicates refresh collision or row boundary in burst mode; ignored in async mode - enables real-time latency arbitration without controller overhead. |
| LB#/UB# | Byte Enable Inputs | Select DQ[7:0] (LB#) or DQ[15:8] (UB#); both LOW enables full 16-bit transfer - supports byte-level granularity in mixed-data-width systems. |
Key Features
| Feature | Design Value |
|---|---|
| Transparent Self-Refresh | Hidden DRAM refresh requires no controller intervention or timing penalty - maintains full READ/WRITE bandwidth during operation. |
| CRAM 1.5 Compliance | Configurable into CellularRAM 1.5 x16 A/D MUX mode - ensures interoperability with legacy baseband and application processors. |
| Deep Power-Down (DPD) | Reduces current to <10 μA when RCR[4] = 1 and CE# transitions HIGH - extends standby time in sleep-mode wearable sensors. |
| Partial-Array Refresh (PAR) | Refreshes only active memory segments (RCR[2:0] programmable) - cuts standby current up to 60% when storing sparse firmware images. |
| Temperature-Compensated Refresh (TCR) | On-chip sensor adjusts refresh interval based on die temperature - eliminates worst-case refresh overhead at room temperature. |
Applications
| Smartphone Application Processor Cache | IoT Edge Node Firmware Storage |
|---|---|
|
Use Scenario: Offloading L2/L3 cache for ARM Cortex-A series application processors in LTE/5G handsets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency PSRAM acting as unified memory extension with burst-mode Flash bus compatibility. Use Value: Enables 133MHz continuous burst reads to sustain >2GB/s memory bandwidth while consuming <35mA - critical for video decode acceleration. |
Use Scenario: Storing boot firmware, OTA update payloads, and sensor fusion algorithms in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Non-volatile-like memory with SRAM interface simplicity and DRAM density, supporting fast wake-from-sleep execution. Use Value: Achieves <250μA standby with PAR+TCR, extending 2-year battery life; DPD mode reduces leakage to <10μA during deep sleep cycles. |
| Automotive Infotainment Display Buffer | Industrial HMI Graphics Framebuffer |
|
Use Scenario: Holding rendered UI frames and video overlay buffers in head-unit displays operating across −40°C to +85°C. IC Role / Device Role / Timing Role: Temperature-stable PSRAM providing glitch-free frame updates via 4-word burst writes synchronized to display controller clocks. Use Value: 70ns random access ensures sub-10μs pixel fetch latency; wide temp range qualification avoids thermal derating in dashboard environments. |
Use Scenario: Serving as dual-frame graphics buffer for 720p HMI panels in factory HMIs with deterministic real-time response. IC Role / Device Role / Timing Role: Synchronous burst-mode memory interfaced to FPGA-based display controllers using WAIT-driven flow control. Use Value: WAIT output enables precise burst termination at row boundaries - prevents visual tearing during rapid screen refreshes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS66WV51216EBLL-70B1LI | 512K × 16 SRAM (no DRAM core, no refresh, 70ns access) | No burst mode, no DPD, higher standby current (>1mA) | Choose for ultra-low-latency deterministic access where refresh management is undesirable. |
| Winbond W958D8KBKX7I | 128Mb (8M × 16), same package and pinout, identical BCR/RCR architecture | Higher density for larger firmware or multi-app storage; same power profile and timing | Choose when memory footprint expansion is needed without PCB or firmware changes. |
Compared with ISSI IS66WV51216EBLL-70B1LI, W956D6KBKX7I delivers 128× more density and 4× lower standby current via PAR/TCR, but requires WAIT-aware controller logic; compared with W958D8KBKX7I, it offers identical interface behavior at half the capacity - ideal for cost-sensitive designs with constrained firmware size.
Availability
W956D6KBKX7I is available at Aetrix Electronics and suitable for smartphone application processor cache, IoT edge node firmware storage, and automotive infotainment display buffer applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for W956D6KBKX7I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash memory, and logic solutions for consumer, industrial, and communications markets.
The W956D6KBKX7I belongs to Winbond's ADMUX PSRAM product line, designed specifically to replace SRAM in portable and battery-powered systems where density, power efficiency, and Flash-bus compatibility are critical.
FAQ
What is the primary function of the W956D6KBKX7I in a system design?
The W956D6KBKX7I functions as a high-density, low-power pseudo-static RAM that emulates SRAM behavior while using a DRAM core. It serves as main memory or cache extension in portable systems, offering 64Mb capacity with 70ns random access, burst-mode throughput, and transparent self-refresh - eliminating the need for external refresh controllers in applications like smartphone APs and IoT nodes.
Does the W956D6KBKX7I require external refresh circuitry?
No, the W956D6KBKX7I does not require external refresh circuitry. It incorporates transparent self-refresh logic that executes hidden refresh cycles automatically. This functionality is managed internally via the Refresh Configuration Register (RCR), supporting temperature-compensated and partial-array refresh modes - all configurable without host controller involvement during normal operation of the W956D6KBKX7I.
How does the WAIT signal behave during asynchronous versus burst mode operation of the W956D6KBKX7I?
During asynchronous operation, the WAIT signal on the W956D6KBKX7I must be ignored per datasheet specification; it is not functional and its state is undefined. In burst mode, WAIT asserts to indicate refresh collisions or row-boundary transitions, and de-asserts to signal valid data availability - enabling the controller to dynamically adjust latency without fixed timing margins.
Can the W956D6KBKX7I operate in both CRAM 1.5 and enhanced-speed modes?
Yes, the W956D6KBKX7I is programmable into two operational modes: CRAM 1.5 x16 A/D MUX compliance mode (standard timing), and an enhanced-speed mode where the data rate doubles. Mode selection is performed via configuration register settings, allowing designers to optimize for interoperability or performance depending on host controller capability and system requirements for the W956D6KBKX7I.
What package type and ball count does the W956D6KBKX7I use?
The W956D6KBKX7I uses a 49-ball WFBGA package measuring 6mm × 8mm with 0.5mm pitch. This fine-pitch, space-efficient package supports high-density PCB layouts in slim-profile portable devices and is fully specified in the official Winbond datasheet for the W956D6KBKX7I, including mechanical drawings and solder reflow profiles.
W956D6KBKX7I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 49-WFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 70 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 49-WFBGA (4x4)
W956D6KBKX7I FAQ
1.How can I place an order for W956D6KBKX7I through Aetrix?
Please submit a Request for Quotation (RFQ) for W956D6KBKX7I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W956D6KBKX7I reliable?
The price and inventory of W956D6KBKX7I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W956D6KBKX7I is usually 5 days.
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W956D6KBKX7I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W956D6KBKX7I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W956D6KBKX7I?
For technical support, including W956D6KBKX7I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W956D6KBKX7I requirements.
6.How does Aetrix verify that W956D6KBKX7I is sourced from the original manufacturer or authorized distributors?
All W956D6KBKX7I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W956D6KBKX7I meets industry standards.
7.What is the process for return or replacement of W956D6KBKX7I?
All W956D6KBKX7I units undergo pre-shipment inspection (PSI). If there is an issue with W956D6KBKX7I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W956D6KBKX7I part is unused and in its original packaging.
Return procedure for W956D6KBKX7I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W956D6KBKX7I Tags

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M24C02-WMN6TP
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