Winbond Electronics Corporation W956D8MBYA5I TR

Overview

W956D8MBYA5I TR from Winbond Electronics is a 64Mb HyperRAM device operating at 1.8V with a 200MHz maximum clock rate, delivering up to 400 MT/s DDR throughput via an 8-bit HyperBus interface. It features configurable burst modes (wrapped/linear/hybrid), hybrid sleep and deep power-down modes, and supports partial array refresh for low-power embedded memory applications including graphics buffers and real-time firmware storage.

For engineers reviewing the W956D8MBYA5I TR datasheet, W956D8MBYA5I TR pinout, W956D8MBYA5I TR application, or W956D8MBYA5I TR equivalent, key selection criteria include HyperBus timing compliance, 24-ball TFBGA footprint compatibility, 1.8V VCC/VCCQ supply requirements, RWDS-based latency signaling, and burst configuration register support for cache-line-aligned or linear sequential access.

Technical Context

The W956D8MBYA5I TR implements a DDR HyperBus interface with differential (CK/CK#) or single-ended (CK) clocking, using RWDS as a bidirectional strobe/mask signal that indicates initial latency during CA phase and serves as source-synchronous read strobe or write mask. All transactions begin with CS# assertion and six-byte Command-Address (CA) transfer over DQ[7:0] in center-aligned DDR format.

It supports dual-bank memory architecture with configurable initial latency (1× or 2× tACC), wrapped burst lengths of 16–128 bytes, hybrid burst (wrapped + linear), and two configuration registers enabling drive strength control, master clock type selection, partial array refresh, and distributed refresh intervals - all accessible via HyperBus register space addressing.

Key Specifications

Pinout & Package

Package: 24-ball TFBGA, 5mm × 5mm, 0.8mm pitch, ball-down mounting. Compatible with standard reflow profiles for fine-pitch BGAs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperRAM applications.

Compared with W956A8MBYA5I TR and IS66WV1288GBLL-150B1LI, the W956D8MBYA5I TR uniquely delivers 1.8V-compatible HyperBus performance with RWDS-based latency signaling and hybrid burst - critical for deterministic real-time graphics and low-power firmware XIP in constrained industrial designs.

Availability

W956D8MBYA5I TR is available at Aetrix Electronics and suitable for display frame buffers, real-time firmware storage, industrial HMI graphics caches, and edge AI inference scratchpads requiring stable component supply across extended product lifecycles.

Supply support for W956D8MBYA5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and high-performance serial interface memories.

The W956D8MBYA5I TR belongs to Winbond's HyperRAM family, designed specifically to replace parallel PSRAM and low-density DDR SDRAM in resource-constrained embedded systems where pin count, power, and deterministic latency are critical.

FAQ

What is the primary interface protocol supported by the W956D8MBYA5I TR?

The W956D8MBYA5I TR uses the HyperBus interface - a low-pin-count, double-data-rate (DDR) protocol with 8-bit DQ, RWDS, CS#, and differential/single-ended clock (CK/CK#). It is not SPI, QSPI, or standard parallel interface. The W956D8MBYA5I TR relies on RWDS for latency indication and data strobing, distinguishing it from conventional PSRAM or NOR Flash devices.

Does the W956D8MBYA5I TR support both wrapped and linear burst modes?

Yes, the W956D8MBYA5I TR supports wrapped burst (16/32/64/128-byte), linear burst, and hybrid burst (wrapped + linear) via Configuration Register 0. Burst type is selected per-transaction using the CA[45] bit, allowing dynamic switching - essential for mixing cache-line-aligned reads with large sequential transfers in the same application.

What power supply voltages does the W956D8MBYA5I TR require?

The W956D8MBYA5I TR requires two separate 1.8V supplies: VCC (1.8V ±0.1V) for core logic and input buffers, and VCCQ (1.8V ±0.1V) for DQ and RWDS output drivers. These must be independently decoupled. It is not compatible with 3.0V operation - that variant is the W956A8MBYA5I TR.

How does the RWDS pin function during read and write operations in the W956D8MBYA5I TR?

In the W956D8MBYA5I TR, RWDS serves three roles: (1) during Command-Address phase, it outputs high to indicate additional initial latency; (2) during read data transfer, it acts as an edge-aligned read data strobe; (3) during write data transfer, it functions as a byte-level mask (high = masked, low = written). This multi-role behavior is intrinsic to HyperBus and eliminates need for separate RD/WR control lines.

Is the W956D8MBYA5I TR pin-compatible with other HyperRAM devices in the same family?

Yes, the W956D8MBYA5I TR shares the identical 24-ball TFBGA package and pinout with W956A8MBYA5I TR, W956D8MBYA6I TR, and W956A8MBYA6I TR. All use the same ball assignment and electrical interface definition - only supply voltage (1.8V vs. 3.0V) and max clock (200MHz vs. 166MHz) differ between variants.