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Winbond Electronics Corporation W957A8MFYA5I
- Part No.:
- W957A8MFYA5I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 24-TBGA
- Datasheet:
-
W957A8MFYA5I.pdf
- Description:
- IC DRAM 128MBIT HYPERBUS 24TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,557
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Product details
Overview
W957A8MFYA5I from Winbond Electronics is a 128Mb (16MB) HyperRAM device operating at 3.0V, supporting DDR HyperBus interface up to 200MHz clock (400 MT/s), with 8-bit data bus and Dual-Die-Package (DDP) TFBGA-24封装. It delivers high-bandwidth, low-pin-count memory for microcontroller-based graphics, firmware storage, and real-time buffer applications requiring deterministic latency and power efficiency.
For engineers reviewing the W957A8MFYA5I datasheet, W957A8MFYA5I pinout, W957A8MFYA5I application, or W957A8MFYA5I equivalent, this part enables fast linear/wrapped burst reads and writes with configurable drive strength, hybrid sleep mode, partial array refresh, and dual-die addressing - critical for embedded systems balancing throughput, power, and footprint.
Technical Context
The W957A8MFYA5I implements a DDR HyperBus interface with bidirectional RWDS acting as both read data strobe and write data mask, enabling source-synchronous timing control. Its DDP architecture integrates two 64Mbit dies in one 24-ball package, supporting die-selectable addressing and burst operations crossing die boundaries.
It supports multiple latency modes (initial/fixed/hybrid), configurable burst types (linear/wrapped/hybrid), and dual VCC/VCCQ supplies (3.0V/3.0V). Power management includes Hybrid Sleep Mode (HSM) and Deep Power Down (DPD), with partial array refresh reducing current during idle periods without full array refresh overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb (16MB) total capacity across two 64Mbit dies in DDP configuration |
| Interface | HyperBus DDR: 8-bit DQ + CK/CK# or single-ended CK, CS#, RESET#, RWDS |
| Max Clock Rate | 200MHz - enables 400 MT/s sustained throughput in linear burst mode |
| Supply Voltage | VCC = VCCQ = 3.0V ±0.3V - compatible with 3.3V I/O domains and low-noise 3.0V rails |
| Operating Temp | -40°C to +85°C case temperature - qualified for industrial-grade embedded operation |
| Burst Config | Wrapped (16/32/64/128-byte), linear, or hybrid burst - supports cache-line fill and streaming transfers |
| Power Modes | Hybrid Sleep Mode (HSM) and Deep Power Down (DPD) - reduce ICC to ≤10µA in DPD |
Pinout & Package
W957A8MFYA5I uses a 24-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package, 5×5 mm footprint with 0.5 mm pitch, Dual-Die-Package (DDP) construction. The ball map defines dedicated signal roles with RFU (Reserved for Future Use) positions isolated from routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable for all HyperBus transactions; defines transaction boundaries |
| CK / CK# | Differential Clock Input | DDR timing reference; supports single-ended CK-only mode for simplified layout |
| DQ[7:0] | Bi-directional Data Bus | Transfers command/address/data in DDR fashion; 8-bit width reduces PCB trace count vs parallel NOR/SDRAM |
| RWDS | Read/Write Data Strobe | Bidirectional: output indicates initial latency during CA phase; edge-aligned read strobe; input acts as byte mask during writes |
| RESET# | Hardware Reset Input | Asynchronous reset with internal pull-up; places DQ/RWDS in Hi-Z and returns device to Standby state |
| VCC / VCCQ | Power Supplies | VCC powers core logic and input buffers; VCCQ powers DQ/RWDS output drivers - allows separate noise isolation |
| VSS / VSSQ | Ground Returns | Separate analog/digital ground planes recommended to minimize switching noise coupling into data paths |
Key Features
| Feature | Design Value |
|---|---|
| HyperBus DDR Interface | Reduces pin count to 12 active signals (vs ≥40 for SDRAM), enabling compact MCU designs with high bandwidth |
| Dual-Die-Package (DDP) | Integrates two 64Mbit dies in one TFBGA-24; supports die-selectable addressing and seamless die-crossing bursts |
| Configurable Burst Types | Wrapped burst optimizes cache-line fetches; linear burst sustains 400 MB/s for graphics/video buffers |
| Hybrid Sleep Mode (HSM) | Reduces dynamic power during idle while retaining row activation state - faster wake than full DPD recovery |
| Partial Array Refresh | Lowers refresh current by refreshing only active sub-arrays - extends battery life in portable applications |
Applications
| Industrial HMI Display Buffer | Automotive Instrument Cluster Memory |
|---|---|
|
Use Scenario: Stores frame buffers and GUI assets for ARM Cortex-M7/M33-based displays with limited PCB area. IC Role / Device Role / Timing Role: External high-speed memory mapped via HyperBus, replacing PSRAM or QSPI Flash+RAM combos. Use Value: 400 MT/s linear burst delivers 400 MB/s pixel streaming without DMA bottlenecks; DDP density fits 1080p frame buffers in <5mm² footprint. |
Use Scenario: Holds calibrated gauge graphics and real-time telemetry overlays in automotive digital clusters. IC Role / Device Role / Timing Role: Low-latency, AEC-Q100-compliant external memory interfaced to RH850 or S32K MCU via HyperBus. Use Value: -40°C to +85°C operation ensures reliability; Hybrid Sleep Mode cuts standby current below 50µA during ignition-off periods. |
| IoT Edge Gateway Firmware Cache | Medical Portable Device Data Log Buffer |
|
Use Scenario: Caches OTA firmware update payloads and runtime configuration tables in cellular/NB-IoT gateways. IC Role / Device Role / Timing Role: Memory-mapped non-volatile extension of MCU SRAM, accessed via MMU or direct bus mapping. Use Value: Wrapped burst mode enables rapid 128-byte cache-line fills from QSPI boot flash; configurable drive strength eases signal integrity on long traces. |
Use Scenario: Buffers high-resolution sensor streams (ECG, SpO₂) before compression/transmission in handheld diagnostics. IC Role / Device Role / Timing Role: High-bandwidth, low-power temporary storage synchronized to ADC sampling clocks via HyperBus timing control. Use Value: Partial Array Refresh reduces average current to <1mA during continuous 1ksps logging; DQ/RWDS edge alignment ensures jitter-free timestamp correlation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar HyperRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W957D8MFYA5I | 1.8V VCC/VCCQ supply; identical pinout, timing, and DDP structure | Targets 1.8V SoC platforms (e.g., NXP i.MX RT10xx); lower voltage margin may limit noise immunity | Select when host MCU operates at 1.8V and requires matching I/O voltage domain |
| IS66WV1288GBLL-15BLI | Parallel async SRAM (128Mb, 8-bit), 15ns access, 3.3V, SOIC-44 - no DDR or HyperBus | Requires 28+ address/data/control lines; higher pin count, no burst or power modes | Choose only if legacy design lacks HyperBus support and board space/layout permits larger package |
Compared with W957D8MFYA5I, the W957A8MFYA5I offers higher noise margin and compatibility with 3.0V–3.3V systems, while IS66WV1288GBLL-15BLI provides simpler interface but sacrifices bandwidth, power efficiency, and footprint - making W957A8MFYA5I optimal for new HyperBus-enabled designs prioritizing integration and throughput.
Availability
W957A8MFYA5I is available at Aetrix Electronics and suitable for industrial HMI, automotive instrument clusters, IoT gateways, and portable medical devices requiring stable component supply, extended temperature operation, and high-density low-pin-count memory.
Supply support for W957A8MFYA5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, SLCD RAM, and HyperRAM products for embedded and industrial markets.
The W957A8MFYA5I belongs to Winbond's HyperRAM family, designed specifically to replace PSRAM and low-density SDRAM in resource-constrained MCUs where pin count, power, and deterministic latency are critical.
FAQ
What is the memory organization of the W957A8MFYA5I?
The W957A8MFYA5I contains two 64Mbit dies in a Dual-Die-Package (DDP), totaling 128Mb (16MB) of memory. Each die is organized as 8,388,608 words × 16 bits, accessible via HyperBus address space with die-selectable addressing and configurable burst lengths up to 128 bytes.
Does the W957A8MFYA5I support differential clocking?
Yes, the W957A8MFYA5I supports both differential (CK/CK#) and single-ended (CK only) clocking modes. CK# is unused in single-ended mode, and the clock need not be free-running - enabling flexible timing control and reduced EMI in noise-sensitive layouts.
How does RWDS function during read and write operations in the W957A8MFYA5I?
In the W957A8MFYA5I, RWDS serves three roles: (1) output during Command/Address phase to indicate additional refresh latency, (2) edge-aligned read data strobe during read transfers, and (3) input acting as byte-level write mask during write transfers - enabling precise data alignment without extra control lines.
What power-saving modes are available on the W957A8MFYA5I?
The W957A8MFYA5I supports Hybrid Sleep Mode (HSM), which retains row activation state for fast wake-up, and Deep Power Down (DPD), reducing ICC to ≤10µA. Both modes are entered via HyperBus register writes and support automatic exit on CS# assertion or clock restart.
Is the W957A8MFYA5I pin-compatible with other HyperRAM devices in Winbond's portfolio?
Yes, the W957A8MFYA5I shares identical 24-ball TFBGA pinout and HyperBus interface definition with W957D8MFYA5I and W957A8MFYA6I, differing only in VCC/VCCQ voltage (3.0V vs 1.8V) and max clock rating (200MHz vs 166MHz), enabling drop-in substitution within same voltage domain.
W957A8MFYA5I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 24-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- HyperRAM
- Memory Size:
- 128Mbit
- Memory Organization:
- 16M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 36 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-TFBGA, DDP (6x8)
W957A8MFYA5I FAQ
1.How can I place an order for W957A8MFYA5I through Aetrix?
Please submit a Request for Quotation (RFQ) for W957A8MFYA5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W957A8MFYA5I reliable?
The price and inventory of W957A8MFYA5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W957A8MFYA5I is usually 5 days.
3.What payment methods are accepted for W957A8MFYA5I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W957A8MFYA5I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W957A8MFYA5I?
W957A8MFYA5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W957A8MFYA5I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W957A8MFYA5I?
For technical support, including W957A8MFYA5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W957A8MFYA5I requirements.
6.How does Aetrix verify that W957A8MFYA5I is sourced from the original manufacturer or authorized distributors?
All W957A8MFYA5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W957A8MFYA5I meets industry standards.
7.What is the process for return or replacement of W957A8MFYA5I?
All W957A8MFYA5I units undergo pre-shipment inspection (PSI). If there is an issue with W957A8MFYA5I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W957A8MFYA5I part is unused and in its original packaging.
Return procedure for W957A8MFYA5I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W957A8MFYA5I Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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