Winbond Electronics Corporation W957D8MFYA5I TR

Overview

W957D8MFYA5I from Winbond Electronics is a 128Mb (16MB) HyperRAM device operating at 1.8V, featuring a DDR HyperBus interface with 200MHz clock support and up to 400 MT/s data throughput. It implements Dual-Die-Package (DDP) architecture in a 24-ball TFBGA, enabling high-bandwidth, low-pin-count memory expansion for microcontroller-based graphics and real-time control systems.

For engineers reviewing the W957D8MFYA5I datasheet, W957D8MFYA5I pinout, W957D8MFYA5I application, or W957D8MFYA5I equivalent, key selection considerations include its configurable burst modes (wrapped/linear/hybrid), dual-die addressing, RWDS-synchronized read/write timing, and support for Hybrid Sleep and Deep Power Down modes in industrial temperature range (-40°C to +85°C).

Technical Context

The W957D8MFYA5I uses a DDR HyperBus interface with differential (CK/CK#) or single-ended (CK only) clocking, where all command/address/data transfers occur on the 8-bit DQ[7:0] bus using center-aligned CA and edge-aligned read data. RWDS serves as bidirectional strobe/mask-output during CA phase to signal refresh latency, output as read data strobe, and input as write mask.

Internally, it integrates two 64Mb dies in one package, supporting die-selectable addressing and boundary-crossing burst operations. Configuration registers enable runtime control of initial/fixed latency, drive strength, partial array refresh, and hybrid sleep entry/exit timing-all accessible via HyperBus register space without requiring external configuration pins.

Key Specifications

Pinout & Package

W957D8MFYA5I is housed in a 24-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package with 5×5 mm footprint and 0.5 mm ball pitch. The Dual-Die-Package (DDP) integrates two identical 64Mb HyperRAM dies sharing all interface signals except internal die-select logic.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperRAM interface applications.

Compared with W957A8MFYA5I, the W957D8MFYA5I enables lower system power and better noise immunity via 1.8V operation; compared with IS66WV1288GBLL-150B3LI, it reduces interface complexity by >60% pins and adds adaptive power management for battery-sensitive edge devices.

Availability

W957D8MFYA5I is available at Aetrix Electronics and suitable for industrial HMI displays, automotive digital clusters, edge AI accelerators, and industrial PLC motion controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W957D8MFYA5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, WSON NAND, and high-performance RAM products for embedded and industrial markets.

The W957D8MFYA5I belongs to Winbond's HyperRAM family, designed specifically to replace parallel NOR/NAND and PSRAM in bandwidth-constrained, pin-limited microcontroller applications while maintaining deterministic timing and low power.

FAQ

What is the memory organization of the W957D8MFYA5I?

The W957D8MFYA5I contains two 64Mb dies in a Dual-Die-Package (DDP), totaling 128Mb (16MB) of memory. Each die is organized as 8,388,608 words × 16 bits, with addressing managed via HyperBus command/address protocol and die-select logic internal to the package. Row/column boundaries and burst alignment follow HyperBus specification v1.0.

Does the W957D8MFYA5I support both differential and single-ended clocking?

Yes, the W957D8MFYA5I supports both differential (CK/CK#) and single-ended (CK only) clocking modes. CK# is unused in single-ended mode, and the clock need not be free-running. This flexibility allows integration with MCUs offering either clock topology without external level-shifting or termination changes.

How does RWDS function during read and write operations in the W957D8MFYA5I?

In the W957D8MFYA5I, RWDS acts as an output during the Command/Address phase to indicate required refresh latency, as a read data strobe (edge-aligned with DQ) during read transfers, and as a write data mask (high = masked byte, low = valid byte) during write transfers. Its bidirectional behavior is intrinsic to HyperBus protocol and requires no mode pin.

What power-saving modes are implemented in the W957D8MFYA5I?

The W957D8MFYA5I implements Hybrid Sleep Mode (HSM) and Deep Power Down (DPD). HSM retains memory contents with sub-µs entry/exit and minimal current draw; DPD reduces ICC to ≤10 µA but requires longer wake time. Both are controlled via HyperBus configuration registers, enabling software-defined power policy.

Is the W957D8MFYA5I pin-compatible with other Winbond HyperRAM devices in the same package?

Yes, the W957D8MFYA5I shares identical 24-ball TFBGA pinout and ball assignment with W957A8MFYA5I and W957A8MFYA6I. All three support the same HyperBus interface signals (CS#, CK/CK#, RWDS, RESET#, DQ[7:0], VCC/VCCQ/VSS/VSSQ), enabling drop-in voltage-level replacement within the same PCB layout.