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Winbond Electronics Corporation W958D8NWSX4I TR

Part No.:
W958D8NWSX4I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
30-BGA, WLCSP
Datasheet:
AetrixW958D8NWSX4I TR.pdf
Description:
IC PSRAM 256MBIT HYPERBS 30WLCSP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,613

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Product details

Overview

W958D8NWSX4I TR from Winbond Electronics is a 256Mb HyperRAM device implementing the HyperBus DDR interface for high-bandwidth, low-pin-count external memory expansion in resource-constrained embedded systems. It operates at 1.8V, supports up to 250MHz clock frequency (500 MB/s peak throughput), and features configurable burst modes (wrapped/linear/hybrid), partial array refresh, and hybrid sleep/deep power-down modes. It is used as off-chip RAM in microcontroller-based graphics displays and real-time control units requiring deterministic latency and low power.

For engineers reviewing the W958D8NWSX4I TR datasheet, W958D8NWSX4I TR pinout, W958D8NWSX4I TR application, or W958D8NWSX4I TR equivalent, key selection criteria include HyperBus timing compliance, RWDS-driven latency signaling, 30-ball WLCSP package integration, and register-configurable drive strength and refresh behavior.

Technical Context

The W958D8NWSX4I TR implements a DDR HyperBus interface with bidirectional RWDS acting as both read data strobe and write data mask - not a dedicated clock or control signal. Its internal architecture uses interleaved half-page access to sustain linear bursts across row boundaries without software intervention.

It supports two clock configurations (single-ended CK or differential CK/CK#), requires no free-running clock, and uses command/address (CA) words over DQ[7:0] to define transaction type, address space (memory/register), burst mode, and target row/column. Initial latency is dynamically signaled via RWDS during CA phase, enabling adaptive timing alignment.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256Mb (32MB) organized as 4,194,304 × 8-bit; enables compact external RAM for MCU-based UI buffers.
Interface HyperBus DDR: 8-bit DQ + RWDS + CS# + CK/CK#; reduces pin count vs. parallel NOR/SDRAM while sustaining 500 MB/s.
Max Clock Frequency 250MHz - delivers 500 MB/s peak bandwidth (1 byte × 2 edges × 250 MHz); validated for W958D8NWSX4I TR variant.
Supply Voltage VCC/VCCQ = 1.8V ±0.1V - dual-rail design isolates I/O output drivers (VCCQ) from core logic (VCC) for noise immunity.
Operating Temperature –40°C to +85°C case temperature - qualified for industrial-grade operation in automotive infotainment and HMI panels.
Burst Configurations Wrapped (16/32/64/128 bytes), linear, or hybrid - allows cache-line fill (wrapped) or streaming graphics (linear) without firmware reconfiguration.
Power Modes Hybrid Sleep (fast wake <1 µs) and Deep Power Down (1 µA typical) - enables dynamic power scaling in battery-powered edge devices.

Pinout & Package

W958D8NWSX4I TR uses a 30-ball Wafer-Level Chip-Scale Package (WLCSP) with 0.4mm pitch, optimized for space-constrained PCB layouts in portable and automotive displays.

Pin/Terminal Circuit Role Design Meaning
CS# Chip Select Input Active-low enable for all transactions; defines bus transaction boundaries and enables multi-device sharing on shared DQ/RWDS/CK lines.
CK / CK# Differential Clock Input Supports either differential (CK/CK#) or single-ended (CK only) clocking; eliminates need for external clock buffer in cost-sensitive designs.
DQ[7:0] Bi-directional Data Bus Carries Command/Address (CA) and read/write data in DDR mode; LV-CMOS compatible for direct connection to modern MCU HyperBus controllers.
RWDS Read-Write Data Strobe Bidirectional: outputs initial latency indicator during CA phase, serves as read data strobe (edge-aligned), and acts as write byte mask (High = masked).
RESET# Hardware Reset Input Asynchronous reset with internal weak pull-up; forces device into Standby state and places DQ/RWDS in High-Z - critical for system-level recovery sequences.
VCC / VCCQ Power Supplies VCC powers core logic and input buffers; VCCQ powers DQ/RWDS output drivers - decoupling minimizes switching noise coupling into sensitive analog blocks.
VSS / VSSQ Ground Returns Separate ground planes for VCC (VSS) and VCCQ (VSSQ) maintain signal integrity and reduce ground bounce during high-speed DDR transitions.

Key Features

Feature Design Value
Dynamic Latency Signaling via RWDS RWDS output during CA phase indicates whether tACC requires 1× or 2× latency count - enables host controller to adapt timing without fixed worst-case delays.
Configurable Output Drive Strength Programmable via Configuration Register 0 - allows optimization of signal integrity and EMI for varying trace lengths and loading conditions.
Partial Array Refresh Reduces refresh current by >50% vs. full-array refresh - extends battery life in always-on display subsystems without compromising data retention.
Hybrid Burst Mode Combines one wrapped burst (for cache-line alignment) followed by linear burst (for contiguous streaming) - eliminates software overhead for mixed-access patterns.
Register Space Access Enables runtime read of Device ID registers and write to Configuration Registers 0/1 - supports field-upgradable timing and power behavior without hardware change.

Applications

Industrial HMI Display Buffer Automotive Digital Cluster Memory

Use Scenario: Stores frame buffers and GUI assets for ARM Cortex-M7-based dashboards with 720p resolution and 60Hz refresh.

IC Role / Device Role / Timing Role: External DDR-accessible RAM providing deterministic read latency and burst-aligned pixel data delivery to display controller DMA.

Use Value: Enables 500 MB/s sustained bandwidth to feed dual-LCD pipelines without SDRAM complexity or pin count overhead.

Use Scenario: Holds instrument cluster firmware overlays and real-time telemetry history in ASIL-B compliant vehicle domains.

IC Role / Device Role / Timing Role: Non-volatile-adjacent fast memory supporting rapid context switching between driving modes and diagnostics screens.

Use Value: Hybrid Sleep mode achieves sub-µs wake latency while maintaining data integrity - critical for safety-critical UI responsiveness.

IoT Edge Gateway Packet Buffer Medical Portable Monitor Frame Store

Use Scenario: Buffers encrypted sensor packets from multiple BLE/Wi-Fi endpoints before batch transmission over cellular uplink.

IC Role / Device Role / Timing Role: High-throughput temporary storage with configurable burst length to match variable packet sizes and minimize CPU polling.

Use Value: Wrapped burst mode aligns 16-/32-byte payloads to cache lines, reducing bus arbitration overhead and improving throughput efficiency.

Use Scenario: Captures and stores real-time ECG waveforms at 10 kS/s for local analysis and alarm triggering in handheld diagnostic tools.

IC Role / Device Role / Timing Role: Low-power external RAM supporting continuous acquisition with minimal active time per sample window.

Use Value: Deep Power Down mode draws only 1 µA during idle periods - extends single-charge battery life beyond 72 hours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
W958D8NWSX5I Same 256Mb HyperRAM die, but rated for 200MHz max clock (400 MB/s) and identical WLCSP-30 package. Lower bandwidth requirement; suitable where system clock margin or thermal constraints limit to 200MHz operation. Select W958D8NWSX5I when 400 MB/s suffices and cost sensitivity favors lower-speed qualification.
IS66WV51216EDLL-15BLI 512K × 16-bit parallel SRAM with 15ns access, 3.3V supply, and 48-pin TSOP - no HyperBus interface or DDR capability. Requires more PCB area and MCU pins; lacks RWDS-based latency signaling and low-power modes like Hybrid Sleep. Choose only if legacy parallel bus architecture exists and HyperBus migration is not feasible.

Compared with W958D8NWSX4I TR, W958D8NWSX5I offers identical functionality at reduced speed and cost, while IS66WV51216EDLL-15BLI represents a fundamentally different interface paradigm with higher pin count, fixed latency, and no dynamic power management - making W958D8NWSX4I TR the optimal choice for new HyperBus-enabled designs targeting bandwidth, density, and power efficiency.

Availability

W958D8NWSX4I TR is available at Aetrix Electronics and suitable for industrial HMI displays, automotive digital clusters, and portable medical monitors requiring stable component supply, long-term lifecycle support, and guaranteed traceability.

Supply support for W958D8NWSX4I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND, RAM, and interface-optimized products like HyperRAM and Octal Flash.

The W958D8NWSX4I TR belongs to Winbond's HyperRAM family, designed specifically to replace parallel PSRAM and low-density SDRAM in MCU-based systems where pin count, power, and simplicity are prioritized over absolute bandwidth scalability.

FAQ

What interface standard does the W958D8NWSX4I TR implement?

The W958D8NWSX4I TR implements the HyperBus DDR interface - a proprietary Winbond standard using an 8-bit bidirectional data bus (DQ[7:0]), Read-Write Data Strobe (RWDS), Chip Select (CS#), and differential or single-ended clock (CK/CK#). It is not compatible with standard DDR SDRAM, LPDDR, or QSPI protocols. The W958D8NWSX4I TR requires a HyperBus-capable host controller such as those found in selected NXP i.MX RT series or Renesas RA6M5 MCUs.

Does the W958D8NWSX4I TR support both differential and single-ended clock inputs?

Yes, the W958D8NWSX4I TR supports both differential (CK and CK#) and single-ended (CK only) clock configurations. When using single-ended mode, CK# is left unconnected and internally terminated; the clock is not required to be free-running and may be gated between transactions. This flexibility simplifies board layout and reduces BOM cost in designs where differential signaling is unnecessary. The W958D8NWSX4I TR automatically adapts to the selected clock mode based on CK# voltage level during power-up initialization.

How does RWDS function during read versus write operations in the W958D8NWSX4I TR?

In read operations, RWDS serves as a source-synchronous read data strobe - data on DQ[7:0] is edge-aligned with RWDS transitions. During the Command/Address (CA) phase, RWDS output indicates whether additional initial latency is needed (High = add one cycle). In write operations, RWDS acts as a byte mask: High masks the corresponding data byte (prevents write), Low enables it. RWDS is driven by the host during writes, unlike reads where it is slave-driven. This dual-role behavior is intrinsic to the W958D8NWSX4I TR's HyperBus protocol implementation.

What power-saving modes are available on the W958D8NWSX4I TR?

The W958D8NWSX4I TR supports three power-saving states: Interface Standby (CS# high, clock stopped), Active Clock Stop (CS# low, clock stopped), Hybrid Sleep (ultra-fast wake <1 µs, retains memory contents), and Deep Power Down (1 µA typical, requires hardware reset to exit). Hybrid Sleep is entered via register write and maintains full data retention with near-zero latency recovery - ideal for burst-oriented applications like touch-screen frame buffering. Deep Power Down reduces current by >99% compared to active mode and is controlled via Configuration Register 0. All modes are accessible without external hardware changes on the W958D8NWSX4I TR.

Is the W958D8NWSX4I TR pin-compatible with other HyperRAM devices in the same family?

Yes, the W958D8NWSX4I TR shares identical 30-ball WLCSP packaging, ball assignment, and signal definitions with other members of the W958D8NW family, including W958D8NWSX5I. Pin-to-pin compatibility extends to all functional signals (CS#, CK/CK#, DQ[7:0], RWDS, RESET#, VCC/VCCQ, VSS/VSSQ) and NC positions. This allows direct substitution between speed grades (e.g., upgrading from 200MHz to 250MHz) without PCB redesign. The W958D8NWSX4I TR maintains mechanical and electrical interoperability across the family while differing only in maximum clock rating and associated AC timing parameters.

W958D8NWSX4I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
30-BGA, WLCSP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Memory Type:
-
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
256Mbit
Memory Organization:
32M x 8
Memory Interface:
HyperBus
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
30-WLCSP

W958D8NWSX4I TR FAQ

1.How can I place an order for W958D8NWSX4I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W958D8NWSX4I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W958D8NWSX4I TR reliable?

The price and inventory of W958D8NWSX4I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W958D8NWSX4I TR is usually 5 days.

3.What payment methods are accepted for W958D8NWSX4I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W958D8NWSX4I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W958D8NWSX4I TR?

W958D8NWSX4I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W958D8NWSX4I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W958D8NWSX4I TR?

For technical support, including W958D8NWSX4I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W958D8NWSX4I TR requirements.

6.How does Aetrix verify that W958D8NWSX4I TR is sourced from the original manufacturer or authorized distributors?

All W958D8NWSX4I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W958D8NWSX4I TR meets industry standards.

7.What is the process for return or replacement of W958D8NWSX4I TR?

All W958D8NWSX4I TR units undergo pre-shipment inspection (PSI). If there is an issue with W958D8NWSX4I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W958D8NWSX4I TR part is unused and in its original packaging.

Return procedure for W958D8NWSX4I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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