Winbond Electronics Corporation W966D6HBGX7I

Overview

W966D6HBGX7I from Winbond is a 64Mb CellularRAM™ pseudo-static DRAM with asynchronous, page, and burst (4/8/16/32-word or continuous) operation modes, 70ns random access time, 1.7–1.95V dual-supply (VCC/VCCQ), and x16 I/O width - deployed in mobile baseband processors and feature-rich portable devices requiring low-power, high-bandwidth memory interfacing.

For engineers reviewing the W966D6HBGX7I datasheet, W966D6HBGX7I pinout, W966D6HBGX7I application, or W966D6HBGX7I equivalent, this device supports variable/fixed latency burst modes up to 133 MHz, temperature-compensated refresh (TCR), partial array refresh (PAR), deep power-down (DPD), and dual-mode interface compatibility with SRAM and NOR Flash buses.

Technical Context

The W966D6HBGX7I implements a DRAM core with integrated refresh control logic and two user-accessible registers: Bus Configuration Register (BCR) for burst timing, drive strength (half/full), wrap mode, and latency configuration; and Refresh Configuration Register (RCR) for PAR enable, DPD entry, and page mode control. It operates in three distinct interface modes - asynchronous (CLK/ADV# held low), page mode (16-word pages, 20ns intrapage access), and synchronous burst (133 MHz max, WAIT-synchronized).

Its dual-supply architecture separates core (VCC) and I/O (VCCQ) domains, enabling independent voltage scaling. The device complies with CellularRAM 1.5 specification and supports CRE-based register access, LB#/UB# byte masking, and CE#-controlled standby/DPD entry - all without external refresh controller intervention.

Key Specifications

Pinout & Package

W966D6HBGX7I uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 6.0 mm × 8.0 mm body size. Pin assignment follows JEDEC MO-245AC standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static memory applications.

Compared with IS66WV51216EBLL-70BLI and W968D6HBGX7I, the W966D6HBGX7I uniquely balances density, burst bandwidth, and ultra-low standby power - making it optimal for battery-constrained cellular platforms where both performance and energy efficiency are non-negotiable.

Availability

W966D6HBGX7I is available at Aetrix Electronics and suitable for mobile baseband processors, feature phone subsystems, telematics control units, and industrial handheld terminals requiring stable component supply across extended product lifecycles.

Supply support for W966D6HBGX7I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and trusted computing ICs - serving automotive, industrial, and consumer markets since 1987.

The W966D6HBGX7I belongs to Winbond's CellularRAM™ family, designed specifically to replace PSRAM in cellular and portable applications by combining DRAM density with SRAM-like ease of use and low-power burst interface compatibility.

FAQ

What interface modes does the W966D6HBGX7I support?

The W966D6HBGX7I supports three interface modes: asynchronous (CLK/ADV# held low), page mode (16-word pages, 20ns intrapage access), and synchronous burst (up to 133 MHz with WAIT signaling). Mode selection is controlled by BCR[15]; all modes share the same x16 bus and pinout. The W966D6HBGX7I requires no external refresh controller in any mode due to its transparent self-refresh architecture.

How does the W966D6HBGX7I achieve ultra-low standby current?

The W966D6HBGX7I achieves ≤250 μA standby current at 85°C through three coordinated mechanisms: temperature-compensated refresh (TCR) adjusts refresh rate based on die temperature; partial array refresh (PAR) limits refresh to active memory regions; and deep power-down (DPD) halts all internal activity when RCR[4] = 0 and CE# is deasserted. These features are configured via the Refresh Configuration Register (RCR) and require no host intervention during operation.

Is the W966D6HBGX7I pin-compatible with other CellularRAM devices?

Yes - the W966D6HBGX7I uses a standardized 54-ball VFBGA package (6.0 × 8.0 mm, 0.5 mm pitch) consistent across Winbond's CellularRAM 1.5 family. It shares identical pin assignments, signal definitions, and timing behavior with W968D6HBGX7I (128Mb) and W964D6HBGX7I (32Mb), enabling scalable memory design without PCB revision.

What is the role of the CRE pin on the W966D6HBGX7I?

The CRE (Control Register Enable) pin on the W966D6HBGX7I determines whether memory cycles target the main array or configuration registers. When CRE is HIGH, WRITE operations load the Bus Configuration Register (BCR) or Refresh Configuration Register (RCR); READ operations return register contents (BCR, RCR, or DIDR). When CRE is LOW, all accesses target the memory array. This dual-mode addressing eliminates need for dedicated register address ranges.

Does the W966D6HBGX7I support byte-level writes?

Yes - the W966D6HBGX7I supports true byte-level writes using LB# (DQ[7:0]) and UB# (DQ[15:8]) signals. When only LB# is asserted, only the lower byte is written; when only UB# is asserted, only the upper byte is written; when both are asserted, the full 16-bit word is written. This capability reduces power and bus contention in mixed-width peripheral interfaces without requiring external glue logic.