Winbond Electronics Corporation W966D6HBGX7I TR

Overview

W966D6HBGX7I TR from Winbond is a 64Mb CellularRAM™ pseudo-static DRAM with asynchronous, page, and burst (4/8/16/32-word or continuous) operation modes, 70ns random access time, 1.7–1.95V dual-supply (VCC/VCCQ), and x16 data bus. It serves as low-power memory in portable cellular handsets and feature phones requiring seamless Flash-bus compatibility without external refresh control.

For engineers reviewing the W966D6HBGX7I TR datasheet, W966D6HBGX7I TR pinout, W966D6HBGX7I TR application, or W966D6HBGX7I TR equivalent, key selection criteria include burst latency configurability (variable/fixed), deep power-down (10μA typical), partial array refresh, temperature-compensated refresh, and 54-ball VFBGA package compatibility with legacy NOR Flash footprints.

Technical Context

The W966D6HBGX7I TR implements a DRAM core with integrated self-refresh logic, eliminating system-level refresh overhead. Its interface emulates burst-mode Flash via CLK/ADV#/WAIT signaling while retaining SRAM-like asynchronous access when CLK and ADV# are tied low.

Two user-accessible registers govern operation: the Bus Configuration Register (BCR) controls burst length (3-bit), wrap mode, drive strength (2-bit), latency counter (3-bit), and operating mode (BCR[15]); the Refresh Configuration Register (RCR) enables partial array refresh (RCR[2:0]), deep power-down (RCR[4]), and page mode (RCR[7]).

Key Specifications

Pinout & Package

Package: 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8mm × 8mm × 0.65mm body, 0.5mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static memory applications.

Compared with W966D6HBGX7I TR, the IS66WV12816EBLL-70NLI offers higher density but demands external refresh management and lacks burst acceleration, whereas the W968D6HBGX7I delivers seamless 2× capacity scaling with zero firmware or PCB modifications.

Availability

W966D6HBGX7I TR is available at Aetrix Electronics and suitable for mobile handset baseband, feature phone application processors, and wireless modem firmware cache requiring stable component supply across extended product lifecycles.

Supply support for W966D6HBGX7I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, SLCD RAM, and CellularRAM products for mobile and embedded markets.

The CellularRAM™ product line was designed specifically to replace burst-mode NOR Flash in cellular infrastructure and handset applications, delivering DRAM density with SRAM-like ease of use and ultra-low standby power.

FAQ

What interface protocols does the W966D6HBGX7I TR support?

The W966D6HBGX7I TR supports three distinct interface modes: asynchronous (SRAM-like with CE#/OE#/WE#), page mode (16-word pages with 20ns intrapage access), and synchronous burst (4/8/16/32-word or continuous, up to 133MHz). Mode selection is controlled by BCR[15]; CLK and ADV# are unused in pure asynchronous operation and may be tied low.

How does the W966D6HBGX7I TR handle refresh without external controller intervention?

The W966D6HBGX7I TR incorporates transparent self-refresh logic that executes autonomously using on-chip timing. Temperature-compensated refresh (TCR) adjusts interval based on die temperature, partial array refresh (PAR) limits refresh to active memory regions, and deep power-down (DPD) halts refresh entirely - all configurable via the Refresh Configuration Register (RCR).

Can the W966D6HBGX7I TR operate on a standard NOR Flash bus without modification?

Yes - the W966D6HBGX7I TR is fully compatible with industry-standard burst-mode NOR Flash buses. Its pinout, signal definitions (CE#, OE#, WE#, CLK, ADV#, WAIT), and instruction set mirror those of NOR Flash devices, allowing direct substitution in existing designs without PCB or firmware changes.

What is the function of the CRE pin on the W966D6HBGX7I TR?

The CRE (Control Register Enable) pin on the W966D6HBGX7I TR must be driven HIGH to access internal configuration registers. When CRE is HIGH and WE# is LOW, writes load values into the Bus Configuration Register (BCR) or Refresh Configuration Register (RCR); when CRE is HIGH and OE# is LOW, reads return BCR, RCR, or Device ID Register (DIDR) contents.

Does the W966D6HBGX7I TR support both variable and fixed latency burst modes?

Yes - the W966D6HBGX7I TR supports both variable and fixed initial latency in burst mode, configured via the BCR latency counter (BCR[13:11]) and initial access latency bit (BCR[14]). Variable latency adapts to refresh collisions dynamically; fixed latency guarantees deterministic timing for real-time systems.