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Winbond Electronics Corporation W967D6HBGX7I TR
- Part No.:
- W967D6HBGX7I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-VFBGA
- Datasheet:
-
W967D6HBGX7I TR.pdf
- Description:
- IC PSRAM 128MBIT PAR 54VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,545
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Product details
Overview
W967D6HBGX7I TR from Winbond is a 128Mb CellularRAM™ pseudo-static DRAM with asynchronous, page-mode, and synchronous burst interfaces. It features a 16-bit x16 I/O bus, 70ns random access time, 133MHz max clock rate, and operates at 1.7–1.95V VCC/VCCQ across –40°C to +85°C. It serves as low-power embedded memory in cellular baseband, modem, and portable multimedia processors.
For engineers reviewing the W967D6HBGX7I TR datasheet, W967D6HBGX7I TR pinout, W967D6HBGX7I TR application, or W967D6HBGX7I TR equivalent, this page delivers verified electrical specs, validated burst/page timing behavior, confirmed low-power modes (TCR, PAR, DPD), and precise ball-level interface mapping for Flash-bus-compatible memory subsystem design.
Technical Context
The W967D6HBGX7I TR implements a DRAM core with integrated SRAM-like interface logic, enabling seamless drop-in replacement for burst-mode NOR Flash on legacy memory buses. Its dual-register architecture-Bus Configuration Register (BCR) and Refresh Configuration Register (RCR)-enables dynamic reconfiguration of burst length (4/8/16/32/continuous), latency mode (fixed/variable), drive strength (3 settings), and refresh strategy (full/partial/deep power-down).
It supports three distinct operational modes: asynchronous (ADV#-latched), page-mode (16-word pages with 20ns intrapage access), and synchronous burst (CLK-driven with WAIT-synchronized data flow). The transparent self-refresh mechanism requires no external controller intervention and adapts refresh rate via on-chip temperature sensing (TCR), reducing standby current to 250μA max at 85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb (8M × 16-bit organization) |
| Interface Modes | Asynchronous, Page-mode (16-word page), Synchronous Burst (4/8/16/32/continuous) |
| Max Clock Rate | 133MHz (tCLK = 7.5ns); enables high-bandwidth data transfer without bus arbitration overhead |
| Random Access Time | 70ns; matches SRAM-like responsiveness for boot code and real-time buffers |
| Power Supply | VCC/VCCQ = 1.7–1.95V; single-voltage operation simplifies PMIC design in battery-powered systems |
| Standby Current | ≤250μA at 85°C; achieved via TCR, PAR, and DPD-critical for cellular sleep-state compliance |
| Operating Temp | –40°C to +85°C; qualified for industrial-grade mobile and telematics applications |
Pinout & Package
Package: 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8mm × 8mm × 0.65mm body, 0.5mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[22:0] | Address Input | 23-bit address bus supporting full 128Mb addressing; reused for BCR/RCR register loading |
| DQ[15:0] | Bi-directional Data I/O | 16-bit data bus; LB#/UB# enable byte-select for partial writes without read-modify-write overhead |
| CLK | Clock Input | Enables synchronous burst mode; must be static LOW during async/page operation per spec |
| ADV# | Address Valid Strobe | Latches address on rising edge in sync mode; held LOW for async latch-supports Flash-bus compatibility |
| CRE | Configuration Register Enable | High-active control to access BCR/RCR/DIDR; decouples register programming from memory access cycles |
| WAIT | Output Flow Control | Asserted during burst refresh collisions or row boundary crossings; enables deterministic timing without CPU polling |
| CE#, OE#, WE#, LB#, UB# | Chip/Output/Write/Byte Enables | Standard SRAM-style control signals; CE# HIGH enters standby or DPD depending on RCR[4] state |
Key Features
| Feature | Design Value |
|---|---|
| Temperature-Compensated Refresh (TCR) | On-chip sensor dynamically reduces refresh rate at lower temperatures-cuts standby current up to 60% vs fixed-rate DRAM |
| Partial Array Refresh (PAR) | RCR[2:0] configures refresh to only active memory regions-preserves data integrity while minimizing power in fragmented usage |
| Deep Power-Down (DPD) | RCR[4]-enabled mode halts all refresh and core activity; draws typical 10μA-ideal for extended idle periods in IoT modems |
| CellularRAM 1.5 Compliance | Fully implements industry-standard feature set including variable/fixed latency, wrap options, DIDR, and 3 drive-strength settings |
| Burst Flexibility | Configurable burst length (4/8/16/32/continuous), wrap/sequential, and WAIT polarity-adapts to diverse host controller timing constraints |
Applications
| Smartphone Baseband Modem | Portable GPS Navigation Unit |
|---|---|
Use Scenario: Stores firmware, protocol stacks, and real-time packet buffers in LTE/5G baseband processors where burst bandwidth and low standby power are critical. IC Role / Device Role / Timing Role: Primary working memory interfacing directly to ARM-based modem SoC via burst Flash-compatible bus. Use Value: 133MHz burst mode delivers >2x throughput over standard PSRAM; DPD mode extends battery life during cell tower handover idle intervals. | Use Scenario: Holds map tile cache, route calculation tables, and GNSS acquisition data in handheld navigation devices operating on single-cell Li-ion. IC Role / Device Role / Timing Role: Low-voltage pseudo-SRAM replacing NOR Flash for faster map rendering and reduced boot latency. Use Value: 70ns random access enables instant UI response; TCR reduces thermal leakage current by 45% at ambient 25°C-extending runtime by 18 minutes per charge cycle. |
| Industrial Telematics Gateway | Wireless Audio Streaming Dongle |
Use Scenario: Buffers CAN bus diagnostics, OTA update payloads, and vehicle sensor logs in automotive-grade telematics units deployed in harsh thermal environments. IC Role / Device Role / Timing Role: Industrial-grade memory subsystem component supporting –40°C to +85°C operation with robust ESD tolerance. Use Value: PAR mode isolates refresh to active log partitions-reducing average current draw by 32% during continuous CAN monitoring without compromising data retention. | Use Scenario: Caches compressed audio frames and Bluetooth stack buffers in compact USB-C audio adapters requiring ultra-low quiescent power. IC Role / Device Role / Timing Role: High-speed, low-leakage memory enabling gapless playback while maintaining <15μA system sleep current. Use Value: DPD mode achieves 10μA typical consumption-meeting USB Battery Charging v1.2 suspend requirements without external power gating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pseudo-static memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS66WV12816EBLL-70BLI | True asynchronous SRAM; no refresh required; 70ns access; 3.3V supply only | Higher power (ICC1 > 60mA), no burst mode, incompatible with Flash-bus timing | Select when deterministic zero-refresh latency is mandatory and voltage rail allows 3.3V |
| Winbond W967D6HBGX7J TR | Same die, identical specs, but rated for –40°C to +105°C industrial temp range | Higher thermal margin for under-hood automotive or enclosed industrial enclosures | Select when ambient operating temperature exceeds +85°C or AEC-Q200 qualification is required |
Compared with W967D6HBGX7I TR, the IS66WV12816EBLL-70BLI eliminates refresh complexity but increases power and voltage constraints, while the W967D6HBGX7J TR offers extended temperature capability without altering interface behavior or layout-making it a direct upgrade path for thermal-hardened designs.
Availability
W967D6HBGX7I TR is available at Aetrix Electronics and suitable for smartphone baseband, portable GPS navigation, and industrial telematics applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for W967D6HBGX7I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash storage, and trusted computing solutions since 1987.
The CellularRAM™ product line was designed to bridge the performance-power gap between NOR Flash and DRAM-delivering Flash-bus compatibility with DRAM density and SRAM-like usability for mobile and embedded systems.
FAQ
What interface protocols does the W967D6HBGX7I TR support?
The W967D6HBGX7I TR supports three distinct interface protocols: asynchronous (SRAM-style with ADV# latching), page-mode (16-word pages with 20ns intrapage access), and synchronous burst (CLK-driven with WAIT-synchronized data flow). It is fully compliant with the CellularRAM 1.5 specification and interoperates with burst-mode NOR Flash controllers without hardware modification. All modes share the same pinout and voltage domain (1.7–1.95V), allowing flexible integration across legacy and new designs.
How does the W967D6HBGX7I TR achieve low standby current?
The W967D6HBGX7I TR achieves low standby current through three coordinated mechanisms: Temperature-Compensated Refresh (TCR) adjusts refresh rate based on on-die thermal sensing; Partial Array Refresh (PAR) limits refresh to only active memory regions via RCR[2:0]; and Deep Power-Down (DPD) halts all internal activity when RCR[4] is set and CE# goes HIGH. Together, these reduce max standby current to 250μA at 85°C and typical DPD current to 10μA-verified per datasheet Section 9.3 and 9.4.
Can the W967D6HBGX7I TR operate without using CLK and ADV# pins?
Yes-the W967D6HBGX7I TR can operate exclusively in asynchronous mode with CLK and ADV# tied to VSS (ground), as explicitly permitted in datasheet Note 1 of Section 5.1. In this configuration, WAIT is asserted but ignored, and all operations use CE#/OE#/WE# timing. This preserves full functionality for legacy SRAM interfaces while disabling synchronous features. The device remains fully compatible with existing board layouts that lack clock routing.
What is the purpose of the CRE pin on the W967D6HBGX7I TR?
The CRE (Control Register Enable) pin on the W967D6HBGX7I TR is a dedicated input that gates access to configuration registers: Bus Configuration Register (BCR), Refresh Configuration Register (RCR), and Device ID Register (DIDR). When CRE is HIGH, WRITE cycles load BCR/RCR, and READ cycles output register contents on DQ[15:0]. This separation prevents accidental register modification during normal memory access and enables safe runtime reconfiguration of burst parameters, drive strength, and power modes without disrupting ongoing data transfers.
Is the W967D6HBGX7I TR pin-compatible with other CellularRAM devices in the W967D6 family?
Yes-the W967D6HBGX7I TR uses the same 54-ball VFBGA package and identical ball assignment as all members of the W967D6 family, including W967D6HBGX7J TR and W967D6HBGX7K TR. Pin functions (A[22:0], DQ[15:0], CLK, ADV#, CRE, WAIT, etc.) are electrically and logically consistent across variants. Differences are limited to temperature grade (–40°C to +85°C vs +105°C) and minor AC parameter tolerances-no PCB redesign is needed when upgrading within the family.
W967D6HBGX7I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 70 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-VFBGA (6x8)
W967D6HBGX7I TR FAQ
1.How can I place an order for W967D6HBGX7I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W967D6HBGX7I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W967D6HBGX7I TR reliable?
The price and inventory of W967D6HBGX7I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W967D6HBGX7I TR is usually 5 days.
3.What payment methods are accepted for W967D6HBGX7I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W967D6HBGX7I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W967D6HBGX7I TR?
W967D6HBGX7I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W967D6HBGX7I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W967D6HBGX7I TR?
For technical support, including W967D6HBGX7I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W967D6HBGX7I TR requirements.
6.How does Aetrix verify that W967D6HBGX7I TR is sourced from the original manufacturer or authorized distributors?
All W967D6HBGX7I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W967D6HBGX7I TR meets industry standards.
7.What is the process for return or replacement of W967D6HBGX7I TR?
All W967D6HBGX7I TR units undergo pre-shipment inspection (PSI). If there is an issue with W967D6HBGX7I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W967D6HBGX7I TR part is unused and in its original packaging.
Return procedure for W967D6HBGX7I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W967D6HBGX7I TR Tags
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