Winbond Electronics Corporation W968D6DAGX7I

Overview

W968D6DAGX7I from Winbond is a 256Mb (16M×16) CellularRAM™ pseudo-static DRAM with dual-mode interface support-operating in asynchronous, page, or synchronous burst modes. It features 70ns random access time, 133MHz max clock rate, 1.8V VCC/VCCQ supplies, and deep power-down (25μA typical) for portable cellular applications requiring low-power memory with Flash-like bus compatibility.

For engineers reviewing the W968D6DAGX7I datasheet, W968D6DAGX7I pinout, W968D6DAGX7I application, or W968D6DAGX7I equivalent, this device delivers configurable latency (fixed/variable), partial array refresh, temperature-compensated self-refresh, and burst wrap/sequential options-critical for optimizing bandwidth and standby current in battery-constrained embedded systems.

Technical Context

The W968D6DAGX7I implements a DRAM core with integrated SRAM-like interface logic, enabling seamless drop-in replacement for NOR Flash or PSRAM on burst-capable buses. Its dual register architecture-Bus Configuration Register (BCR) and Refresh Configuration Register (RCR)-allows runtime reconfiguration of burst length (4/8/16/32/continuous), drive strength (half/full), WAIT polarity, latency counter (2–7 cycles), and refresh mode (full/PAR/DPD).

It supports three distinct operational interfaces: asynchronous (CLK/ADV# tied low), page mode (16-word pages, 20ns intrapage access), and synchronous burst (4-word minimum, variable/fixed latency). The WAIT signal arbitrates refresh collisions and signals end-of-row conditions, while CRE enables register access without disrupting memory operations.

Key Specifications

Pinout & Package

W968D6DAGX7I uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch and 8mm × 8mm body size. Pin assignments follow JEDEC MO-245AC standard layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static memory applications.

Compared with IS66WV12816EBLL-70BLI and W9751G6KB-25, the W968D6DAGX7I uniquely balances Flash-compatible burst interface, programmable low-power states, and SRAM-like ease of use-making it optimal for cellular-connected devices needing density, efficiency, and interface simplicity without DDR complexity.

Availability

W968D6DAGX7I is available at Aetrix Electronics and suitable for smartphone baseband subsystems, IoT edge node data buffering, and telematics control units requiring stable component supply with industrial temperature qualification and long-term lifecycle support.

Supply support for W968D6DAGX7I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND Flash, RAM, and trusted computing ICs since 1987.

The CellularRAM™ product line targets portable and battery-operated devices needing high-density, low-power memory with Flash-like bus compatibility-designed to replace NOR Flash in applications demanding faster write performance and lower cost per bit.

FAQ

What interface modes does the W968D6DAGX7I support?

The W968D6DAGX7I supports three distinct interface modes: asynchronous (SRAM-like, with ADV#-latched addresses), page mode (16-word pages, 20ns intrapage access), and synchronous burst (4-/8-/16-/32-word or continuous, up to 133MHz). Mode selection is controlled by BCR[15]; CLK and ADV# are unused in async/page modes and may be tied low.

How does the W968D6DAGX7I handle refresh without external controller intervention?

The W968D6DAGX7I implements transparent self-refresh using an on-chip timer and temperature sensor. Refresh is fully autonomous-no external command or timing control required. The Refresh Configuration Register (RCR) allows optional configuration of partial array refresh (PAR) and deep power-down (DPD), but default self-refresh operates immediately after power-up initialization.

What is the function of the WAIT signal on the W968D6DAGX7I?

The WAIT signal on the W968D6DAGX7I is an output that indicates data validity during synchronous burst operations. It asserts during refresh collisions and at row boundaries (unless burst wrapping is enabled). WAIT is ignored in asynchronous and page modes. Its polarity and behavior are configurable via BCR[10] and BCR[8], and it is gated by CE#-going high-impedance when CE# is high.

Can the W968D6DAGX7I operate with different VCC and VCCQ voltages?

No-the W968D6DAGX7I requires matched 1.8V supplies for both VCC (core) and VCCQ (I/O); the datasheet specifies 1.7V–1.95V tolerance for each, but operation with split rails (e.g., 1.8V core / 3.3V I/O) is not supported. VCCQ must equal VCC to ensure proper level-shifting and timing compliance across all interface modes.

What package type and ball count does the W968D6DAGX7I use?

The W968D6DAGX7I uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch and 8mm × 8mm body size (JEDEC MO-245AC compliant). Ball assignments include dedicated address (A[23:0]), data (DQ[15:0]), control (CE#, OE#, WE#, CRE, ADV#, CLK), and power (VCC, VCCQ, VSS, VSSQ) terminals as defined in the official Winbond pinout diagram.